Abstract: A semiconductor memory device enabling a reduction in size of a memory cell and higher integration. A drive transistor and a word transistor are formed in a p-type active region. Similarly, another drive transistor and another word transistor are formed in another p-type active region. A word line is wired so as to be substantially orthogonal to both of the p-type active regions. A pMOS load transistor is formed in an n-type active region, and another load transistor is formed in another n-type active region. A channel width of the drive transistor is greater than a channel width of the load transistor. Thereby, a cell area can be reduced while achieving the cell current and the SNM equivalent to those of a conventional SRAM cell.

Abstract: A semiconductor memory device which can reduce the size of a memory cell and increase the packing density is disclosed. Each memory cell comprises a p-type active region, an n-type active region, two word lines, a common gate line and a common gate line. Two memory cells are deviated by, for example, an amount of a half bit in the direction which perpendicularly crosses the word line direction. The memory cells are arranged with one of their parts overlapped with one another in the word line direction. Thus, the size of the memory cell can be reduced in the word line direction.

Abstract: A static random access memory device (SRAM) keeping a resistance value of a resistance element at a predetermined level regardless a process variation, by improving a special margin of a diffusion layer region at which the resistance element is formed and a node for connecting a gate electrode thereto. In the SRAM, there is provided a diffusion layer region in a substrate, having a first part of which may form a the resistance element, a second part of which is connected to the drain or source of the MIS access transistor, and a third part of which is connected to the source or drain of the MIS driver transistor and is defined the node, and there is provided an electrode layer connecting the gate of the MIS driver transistor and the node in the diffusion layer region.

Abstract: An alkaline degreasing solution containing 0.01 to 3 g/l of alkali silicate calculated as Si concentration, and 0.01 to 10 g/l of a nonionic surfactant having an HLB value (=20.times.Mw/M, where Mw represents the weight of a hydrophilic group part and M represents the molecular weight of the surfactant) of 5 to 11 and a structure being expressed in the following general formula (I), with a pH value of at least 9.5:R--O--(EO).sub.m (AO).sub.n H (I)where R represents alkyl group, EO represents ethylene oxide group, AO represents alkylene oxide group (propylene oxide group and/or butylene oxide group), m represents an addition molar number of EO which is an integer of 3 to 7, n represents an addition molar number of AO which is an integer of 1 to 6, and m and n satisfy the relation of n<m .ltoreq.3n.

Abstract: An alkaline degreasing solution containing 0.01 to 3 g/l of alkali silicate calculated as Si concentration, and 0.01 to 10 g/l of a nonionic surfactant having an HLB value (=20.times.Mw/M, where Mw represents the weight of a hydrophilic group part and M represents the molecular weight of the surfactant) of 5 to 11 and a structure being expressed in the following general formula (I), with a pH value of at least 9.5:R--O--(EO).sub.m (AO).sub.n H (I)where R represents alkyl group, EO represents ethylene oxide group, AO represents alkylene oxide group (propylene oxide group and/or butylene oxide group), m represents an addition molar number of EO which is an integer of 3 to 7, n represents an addition molar number of AO which is an integer of 1 to 6, and m and n satisfy the relation of n<m.ltoreq.3n.

Abstract: A static random access memory device (SRAM) keeping a resistance value of a resistance element at a predetermined level regardless a process variation, by improving a special margin of a diffusion layer region at which the resistance element is formed and a node for connecting a gate electrode thereto. In the SRAM, there is provided a diffusion layer region in a substrate, having a first part of which may form a the resistance element, a second part of which is connected to the drain or source of the MIS access transistor, and a third part of which is connected to the source or drain of the MIS driver transistor and is defined the node, and there is provided an electrode layer connecting the gate of the MIS driver transistor and the node in the diffusion layer region.

Abstract: A method for degreasing iron, zinc or aluminum metal or an alloy comprising two or more of these metals to be processed by bringing a degreasing solution in contact with the metal to be processed, wherein said degreasing solution contains an alkali silicate, a water-soluble polycarboxylate and a nonionic surfactant and is controlled so as to satisfy the following 1, 2, 3 and 4 conditions.1 The pH value of the degreasing solution is 10.5 or more.2 The concentration of an alkali silicate is 100 ppm or more upon converting into the Si element and satisfactory for the following (a) equation:log.sub.10 Y.ltoreq.0.318 X+2.72 (a)3 The concentration of a water-soluble polycarboxylate is in a range of from 0.01 to 10 g/liter.4 The concentration of a nonionic surfactant is in a range of from 0.01 to 10 g/liter.

Abstract: A metal surface is processed with dipping by a first zinc phosphating solution in which a fluoride complex and a simple fluoride are contained and a concentration of this simple fluoride is 200 to 300 mg/l on a basis converted into the HF concentration and that of the fluoride complex is in a mole ratio with the simple fluoride converted into the HF as shown as, [fluoride complex]/[simple fluoride].gtoreq.0.01, and then the surface is processed with spraying by a second zinc phosphating solution in which a simple fluoride concentration is 500 mg/l or less and higher than that in said first zinc phosphating solution.Thus, on a metal surface is formed a zinc phosphate coating film which is suitable for electrodeposition coating, particular for cationic electrodeposition coating, and superior in coating film adhesion, corrosion-resistance, particularly resistance for warm brine, and prevention of scab-corrosion.

Abstract: A method for treating a metal surface with zinc phosphate of this invention can treat an iron-based surface, a zinc-based surface, an aluminum-based surface as well as a metal surface having two kinds or more of these surfaces with the same zinc phosphate treating solution, and even if treating times increases, the method makes it possible to form a coating film having superior adhesion and high corrosion resistance under a stable condition, and also, it prevents a precipitate formed by a metal ion eluted from a metal surface to be treated, especially, by an aluminum ion. A complex fluoride compound contained in said zinc phosphate treating solution of coming in contact with a metal surface is added so that a concentration (unit: g/l) converted into at least one of a hexafluorosilicic acid group (SiF.sub.6.sup.2-) and a tetrafluoroboric acid group (BF.sub.4.sup.-), with an aluminum ion concentration (unit: g/l) contained in said treating solution, is satisfactory for the following equation (I).

Abstract: A disc cartridge made up of a cartridge housing and a disc-shaped recording medium, such as an optical disc or a magneto-optical disc, accommodated in the cartridge housing, is disclosed. The cartridge housing of the disc cartridge is provided with a recording/reproducing aperture for exposing a part of the disc-shaped recording medium to the outside along the radius of the disc, and with a shutter member for opening or closing the aperture. Within a shutter opening actuating recess formed in the cartridge housing, a discriminating member associated with the type of the disc-shaped recording medium accommodated in the cartridge housing is provided for closing at least a part of the recess to prevent insertion of the disc cartridge into a recording and/or reproducing apparatus which is not suited to the type of the disc-shaped recording medium of the disc cartridge.

Abstract: A pin-fin type heat exchanger comprising a plurality of wire-like heat conductive elements arranged in parallel and spaced from each other, and formed into a corrugated shape, and a method of manufacturing the same by making a corrugated sheet including the wire-like heat conductive elements and a temporary fixing material and removing the temporary fixing material after the heat conductive element is joined to a pipe through which fluid passes.

Abstract: This invention relates to a spiral spring power source for a toy, which can select a method of winding a power spiral spring 7 by a pulling string type winding cord 25 and a method of winding the power spiral spring 7 by a winding key 43 by removing a mechanism relative to the winding yarn 25, can alter the pulling direction of the winding cord 25 at 360.degree. in case of the method with the winding cord 25, can drive the output shaft through a gear set when uncoiling the energized power spiral spring 7, but can produce outputs not at one position but at a plurality of positions to be connected to a plurality of gears selected from the gear set.

Abstract: An optical type record card reader according to the present invention is provided with a line sensor (10) for reading an information by a reflected light from a track of an optical type record card (1) irradiated by a light source (4) and in which optical type record card an information is recorded on a record medium (1A) as a plurality of parallel tracks which can be read out optically, a cylindrical lens (11) located rotatably between the optical type record card (1) and the line sensor (10) and an azimuth error detecting circuit for detecting an azimuth error generated between the track and the line sensor (10), wherein the cylindrical lens (11) is rotated by the detected output of the azimuth error detecting circuit to thereby correct the azimuth error. Thus, it becomes possible to correct the azimuth error of the projected image a sub-track of the optical type record card onto the line sensor smoothly, highly precisely and rapidly by the rotation of the cylindrical lens.

Abstract: Herein disclosed is a T-shaped razor comprising a holder, and a head attached to the holder and having at least one blade. The head is supported such that it can move in directions which are inclined generally in the longitudinal direction of the holder with respect to a plane longitudinal in the extending direction of the edge of the blade. Further comprised is drive means which is disposed in the holder for reciprocating the head obliquely.

Abstract: A drive mechanism for toy running vehicles comprises a frame member having a circular recess for receiving a coil spring therein, a gear, a pinion, and a gear mechanism for connecting the gear and the pinion within the recess with a drive shaft having wheels mounted thereon, a cover for the frame, another frame snap-engaged with the first mentioned frame and a spring in the recess. The inner end of the spring is inserted through a guide slot formed in the first frame and wound within the recess, the inner peripheral wall face of which has a plurality of small recesses for receiving the outer end of the wound spring.

Abstract: A process for phosphating a metal surface to be electrocoated, which comprises treating the metal surface with an acidic phosphating solution comprising a zinc compound in a concentration of 0.5 to 1.5 g/l as zinc ion, a phosphate in a concentration of 5 to 30 g/l as phosphate ion and a nitrite in a concentration of 0.01 to 0.2 g/l as nitrite ion and/or an aromatic nitro compound in a concentration of 0.05 to 2 g/l in water at a temperature of 40 to 70.degree. C. first by dipping for not less than 15 seconds and then by spraying for not less than 2 seconds.

Abstract: A process for phosphating a metal surface to be electrocoated, which comprises treating the metal surface with an acidic phosphating solution comprising a zinc compound in a concentration of 0.5 to 1.5 g/l as zinc ion, a phosphate in a concentration of 5 to 30 g/l as phosphate ion and a nitrite in a concentration of 0.01 to 0.2 g/l as nitrite ion and/or an aromatic nitro compound in a concentration of 0.05 to 2 g/l in water at a temperature of 40 to 70.degree. C. first by dipping for not less than 15 seconds and then by spraying for not less than 2 seconds.

Abstract: A process for iron phosphating the surface of an iron substrate which comprises treating said surface with a phosphating solution comprising at least one of alkali metal and ammonium phosphates and at least one of aromatic nitro compounds as a phosphating accelerator in an aqueous medium and having a pH of about 3 to 6.5 in a closed system phosphating installation.

Abstract: A knife is composed of a gripping handle and a blade adapted to be detachably mounted on the handle. The blade is formed with a profiled slot at a base portion to be secured to the handle.

Abstract: An edge tool in which a bent portion is formed by bending an edge portion of a blade having a gripping portion and an edge is formed by grinding and polishing the bent portion.The edge tool has an edge with a high strength, cuts well, enjoys a superior durability, allows the user of the edge tool to produce a desired cutting with great ease, owing to the fact that the user of the edge tool can see the edge easily during the cutting, and can be readily manufactured at a low cost.