Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: An image processing apparatus includes: an operation receiving section that, when an enlarged image of a specific region in a first captured image having a predetermined size or an enlarged image of a specific region in a second captured image having an aspect ratio different from that of the first captured image is displayed on a display section, receives an operation input for changing a display state of the enlarged image; and a display control section that changes a control amount based on the operation input in accordance with whether or not the enlarged image displayed on the display section when the operation input is received is the enlarged image of the specific region of the second captured image, thus changing a display state of the enlarged image being displayed on the display section.

Abstract: An imaging apparatus includes: an image generation section that generates at least one of a first captured image having a predetermined size and a second captured image having an aspect ratio different from that of the first captured image; a recording control section that, when an instruction operation to record the generated captured image is received, records the generated captured image based on the instruction operation; and a display control section that, when a captured image to be displayed at the time of displaying the recorded captured image on a display section is the second captured image, displays the second captured image and an enlarged image of a specific region in the second captured image are displayed on the display section in a correlated manner.

Abstract: An imaging apparatus includes: an imaging unit that respectively generates, with imaging devices different from one another, a first captured image with a specific direction of a subject set in a longitudinal direction, a second captured image with an orthogonal direction orthogonal to the specific direction set in a longitudinal direction and including a subject adjacent to one side of the orthogonal direction of the subject included in the first captured image, and a third captured image with the orthogonal direction set in a longitudinal direction and including a subject adjacent to the other side of the orthogonal direction of the subject included in the first captured image; a detecting unit that detects a state of the imaging apparatus; and a control unit that determines, based on the detected state, a range of a target image as a target of display or recording among the first to third captured images.

Abstract: A flotation apparatus F includes a tank 1 for receiving a liquid raw material, and introduces air into the tank 1 to generate bubbles for adsorbing print ink in the liquid raw material to the bubbles, thereby floating and separating the print ink. The flotation apparatus F includes a circulating device for circulating the liquid raw material by raising and then lowering the liquid raw material in the tank 1, an air supply tube 4 for supplying air into the tank 1, and an agitating member 5 provided in the tank 1 for taking the air from the air supply tube 4 and agitating the air for forming the air into fine bubbles. The agitating member 5 has a rotary shaft 51 held horizontally and a plurality of members 52 horizontally separately provided around an outer periphery.

Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: A system for reducing noise in a signal line, through which upward signals and downward signals are transmitted between a center and terminals, includes a noise-reduction device provided between the center and the terminals. The noise-reduction device attenuates the upward signals by an increased amount when a noise increase regarding the upward signals is detected on the signal line. The system further includes a noise-control device, provided at terminals, which boosts a transmission level of the upward signals by an amount compensating for the attenuation of the upward signals by the noise-reduction device.

Abstract: An imaging device comprising an imaging element for focusing incident light to a light receiving element by the shutter opening to generate image data; a flash for emitting a flash toward an imaging direction of the imaging unit; a controller for controlling the imaging element so as to continuously open the shutter a plurality of times and controlling the flash so as to emit a flash at a second and following opening timings among the plurality of opening timings; and an image processor for generating new image data based on the image data generated by the imaging element by the imaging at the opening timing when the flash does not emit a flash and the image data generated by the imaging element by the imaging at the opening timing when the flash emits a flash.

Abstract: A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor portion) formed by a first minimum processing dimension is formed on a substrate, a memory portion (second semiconductor portion) formed by a second minimum processing dimension smaller than the first minimum processing dimension is stacked above it, and the memory portion (second semiconductor portion) is stacked with respect to the peripheral circuit portion (first semiconductor portion) with an alignment precision rougher than the second minimum processing dimension or wherein memory cells configured by 2-terminal devices are formed in regions where word lines and bit lines intersect in the memory portion, and contact portions connecting the word lines and bit lines and the peripheral circuit portions are arranged in at least two columns in directions in which the word lines

Abstract: When an economy switch signal is ON to instruct that fuel economy should be given priority, a blower of an air conditioning device is operated using a blower characteristic map for fuel economy so that a blower level of the air conditioning device is changed with respect to the change in an engine coolant temperature at a low rate. Also, it is determined whether an engine needs to be operated or stopped using an engine operation map for fuel economy so that the engine is likely to be stopped.

Abstract: A microwave heating unit has a construction to supply a microwave generated by a magnetron to a microwave irradiation chamber having a cylinder in which a container is stored and to irradiate the microwave supplied to the microwave irradiation chamber to a part of a container so that a convection flow is generated in a liquid in the container. By this construction, without requiring a complicated construction for uniform irradiation on the whole surface of the container, uniform heating on the entire liquid stored in the container is made possible with a simplified construction for irradiation of a microwave.

Abstract: A storage device comprises a memory element and an applying unit for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying unit, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other.

Abstract: A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.

Abstract: An imaging device comprising an imaging element for focusing incident light to a light receiving element by shutter opening to generate image data; a flash for emitting a flash toward an imaging direction of the imaging unit; a controller for controlling the imaging element so as to continuously open the shutter a plurality of times and controlling the flash so as to emit a flash at a second and following opening timings among the plurality of opening timings; and an image processor for generating new image data based on the image data generated by the imaging element by the imaging at the opening timing when the flash does not emit a flash and the image data generated by the imaging element by the imaging at the opening timing when the flash emits a flash.

Abstract: Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations.

Abstract: A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.

Abstract: A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor portion) formed by a first minimum processing dimension is formed on a substrate, a memory portion (second semiconductor portion) formed by a second minimum processing dimension smaller than the first minimum processing dimension is stacked above it, and the memory portion (second semiconductor portion) is stacked with respect to the peripheral circuit portion (first semiconductor portion) with an alignment precision rougher than the second minimum processing dimension or wherein memory cells configured by 2-terminal devices are formed in regions where word lines and bit lines intersect in the memory portion, and contact portions connecting the word lines and bit lines and the peripheral circuit portions are arranged in at least two columns in directions in which the word lines

Abstract: A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor portion) formed by a first minimum processing dimension is formed on a substrate, a memory portion (second semiconductor portion) formed by a second minimum processing dimension smaller than the first minimum processing dimension is stacked above it, and the memory portion (second semiconductor portion) is stacked with respect to the peripheral circuit portion (first semiconductor portion) with an alignment precision rougher than the second minimum processing dimension or wherein memory cells configured by 2-terminal devices are formed in regions where word lines and bit lines intersect in the memory portion, and contact portions connecting the word lines and bit lines and the peripheral circuit portions are arranged in at least two columns in directions in which the word lines

Abstract: A memory element in which recording and reading-out of information can easily be performed and which can be manufactured easily using a comparatively simple manufacturing method and a storage device using the memory element are provided. A memory element 10 includes an amorphous thin-film 4 that is in between a first electrode 2 and a second electrode 5, in which at least one electrode in the first electrode 2 and the second electrode 5 contains Ag or Cu and the amorphous thin-film 4 is composed of Ge, and at least one element selected from S, Se, Te and Sb. Also a storage device includes the memory element 10, a wiring connected to the side of the first electrode 2 and a wiring connected to the side of the second electrode 5, in which a memory element 10 is arranged in large numbers.