Abstract: The phosphor according to an aspect of the present disclosure contains a crystal phase having a chemical composition CexYyLa3-x-ySi6N11, where x and y satisfy 0<x?0.6, and (1.5?x)?y?(3?x). The phosphor has an emission spectral peak within a wavelength range of 600 nm or more and 660 nm or less and a first excitation spectral peak within a wavelength range of 480 nm or more and 550 nm or less.

Abstract: A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A phosphor contains a crystal phase having a chemical composition CexM3-x-y?6?11-z. M is one or more elements selected from the group consisting of Sc, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. ? contains Si in an amount of 50 mol % or more of a total mol of ?. ?contains N in an amount of 80 mol % or more N of a total mol of ?. x satisfies 0<x?0.6. y satisfies 0?y?1.0. z satisfies 0?z?1.0. The phosphor shows a maximum peak of an emission spectrum in a wavelength range of 600 nm or more and 800 nm or less and a first peak of an excitation spectrum in a wavelength range of 500 nm or more and 600 nm or less.

Abstract: A wavelength conversion member includes a substrate, a dichroic mirror layer, an SiO2 layer, a ZnO layer, and a phosphor layer, which are sequentially stacked from the substrate. The dichroic mirror layer reflects at least part of light incident from the above. The phosphor layer includes a plurality of phosphors and ZnO between the phosphors.

Abstract: An oxychloride phosphor of the present disclosure includes divalent Eu arranged as an augmenting agent, at part of locations. The locations correspond to site of at least two kinds of predetermined substances included in a host crystal. A rate of the number of the divalent Eu with respect to the sum of the number of moles of the predetermined substance and the number of moles of the divalent Eu is less than 2%. When the predetermined substance is represented by A, the oxychloride phosphor is represented by a general formula of xAO.yEuO.SiO2.zCl. In this formula, A represents Sr and Ca, or Sr, Ca, and Mg, y indicates a value of not less than 0.002 and not more than 0.02, x+y indicates a value of more than 1.00 and not more than 1.30, and z indicates a value of not less than 0.20 and not more than 0.70.

Abstract: A red phosphor material includes an essential component represented by a formula of A2-2xRxEuySmzLnx-y-zM2O8 as a main component, where A represents at least one selected from Ca and Sr; R represents at least one selected from Li, Na, and K; Ln represents at least one selected from La, Gd, and Y; M represents at least one selected from W and Mo; and x, y, and z are numerical values that satisfy 0.2?x?0.7, 0.2?y+z?0.6, 0.005?z?0.04, and x?y?z?0. A light-emitting device includes an excitation light source and the red phosphor material that absorbs excitation light emitted by the excitation light source and emits red light.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, a low-refractive-index layer and a high-refractive-index layer. A submicron structure is defined on the photoluminescent layer and/or the light-transmissive layer. The low-refractive-index layer is located on or near the photoluminescent layer so that the photoluminescent layer is located between the low-refractive-index layer and light-transmissive layer. The high-refractive-index layer is located on or near the low-refractive-index layer so that the low-refractive-index layer is located between the high-refractive-index layer and the photoluminescent layer.

Abstract: A phosphor includes a host crystal including Sr3MgSi2O8 crystal and SrMgSiO4 crystal and also includes Eu2+, or Eu2+ and Mn2+ as luminescent centers. Alternatively, a phosphor includes a host crystal including Sr3MgSi2O8 crystal and SrMgSiO4 and also includes Eu2+ as a luminescent center, the phosphor being free from Mn2+ as a luminescent center. A light-emitting device includes a phosphor layer containing the phosphor. A projector and a vehicle include the light-emitting device.

Abstract: A red phosphor material comprising an essential component represented by a formula of ALn1-x-yEuxSmyM2O8 as a main component, where A represents at least one selected from Li, Na, and K; Ln represents at least one selected from La and Gd; M represents at least one selected from W and Mo; and x and y are numerical values that satisfy 0.1?x+y?0.7 and 0.005?y?0.08. A light-emitting device includes an excitation light source and the red phosphor material that absorbs excitation light emitted by the excitation light source and emits red light.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: ?a/nwav-a<Dint<?a where Dint is a center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship: 0.8Dint(min)<?a/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer emitting light in response to excitation light, a light-transmissive layer located on the photoluminescent layer, and a light guide guiding the excitation light to the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting apparatus includes a light-emitting device and an excitation light source. The light-emitting device includes a photoluminescent layer, a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The excitation light source emits excitation light. The light-emitting device is integrally provided with the excitation light source.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer located on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface. The first light has a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure having at least projections or recesses. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface. The light-emitting device includes second projections on at least one of the photoluminescent layer and the light-transmissive layer, and the distance between adjacent second projections is smaller than Dint.

Abstract: A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength ?a in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.

Abstract: A light-emitting device according to an embodiment includes a photoluminescent layer, a light-transmissive planarization layer that is in contact with the photoluminescent layer and covers a surface of the photoluminescent layer, and a light-transmissive layer that is located on the planarization layer and comprises a submicron structure. The submicron structure has projections or recesses. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air. A distance Dint between adjacent projections or recesses and a refractive index nwav-a of the photoluminescent layer for the first light satisfy ?a/nwav-a<Dint<?a. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from a light emitting surface perpendicular to the thickness direction.

Abstract: A light-emitting device includes a photoluminescent layer and a light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure including at least two periodic structures. Light emitted from the photoluminescent layer includes first light having a wavelength ?a in air and second light having a wavelength ?b in air. The at least two periodic structures include a first periodic structure having a first period pa that satisfies ?a/nwav-a<pa<?a and a second periodic structure having a second period pb that satisfies ?b/nwav-b<pb<?b, where nwav-a and nwav-b denote refractive indices of the photoluminescent layer for the first light and the second light, respectively.

Abstract: A display apparatus includes an excitation light source that outputs excitation light; a light-emitting device including a photoluminescent layer that receives the excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical shutter on an optical path of the light emitted from the photoluminescent layer. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: A light-emitting apparatus includes; a light-emitting device including a photoluminescent layer that receives excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical fiber that receives the light from the photoluminescent layer at one end of the optical fiber and emits the received light from the other end thereof. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.