Abstract: The present invention provides an oxynitride silicate fluorescent substance capable of output a light having a high luminance even when irradiated by an exciting light having a high energy density. The present invention is a yellow fluorescent substance represented by a chemical formula (Ba1-x-y-z,Srx)aSibOcNd:Eu2+y,Y3+z (0.9?a?1.1, 1.9?b?2.1, 1.9?c?2.1, 1.9?d?2.1, 0?x?1, 0<y<0.01, and 0?z<0.01).

Abstract: A fluorescent material according to an aspect of the present disclosure mainly comprises a compound represented by AB0.5-w-x-y-zCwEuxSmyLnzW0.5O3. A is one or more elements selected from the group consisting of alkaline earth metals and mainly contains Ca. B is one or more elements selected from the group consisting of divalent metals and mainly contains Mg. C is one or more elements selected from the group consisting of alkali metals and mainly contains Li, Na, or Li and Na. Ln is one or more elements selected from the group consisting of rare earth elements excluding Eu and Sm. w, x, y, and z meet the following conditions: 0.05?w?0.25, 0.05?x+y?0.25, 0.0?y?0.02, and w=x+y+z.

Abstract: The present disclosure provides a (Ba1?z,Srz)3MgSi2O8:Eu2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba1?z,Srz)3MgSi2O8 based crystal where z satisfies 0?z<1 and a (Ba1?z,Srz)MgSiO4 based crystal where z satisfies 0?z<1 as a host crystal; and Eu2+ as a luminescent center.

Abstract: A fluorescent material according to an aspect of the present disclosure mainly comprises a compound represented by AB0.5-w-x-y-zCwEuxSmyLnzW0.5O3. A is one or more elements selected from the group consisting of alkaline earth metals and mainly contains Ca. B is one or more elements selected from the group consisting of divalent metals and mainly contains Mg. C is one or more elements selected from the group consisting of alkali metals and mainly contains Li, Na, or Li and Na. Ln is one or more elements selected from the group consisting of rare earth elements excluding Eu and Sm. w, x, y, and z meet the following conditions: 0.05?w?0.25, 0.05?x+y?0.25, 0.0?y?0.02, and w=x+y+z.

Abstract: A wavelength conversion member includes a substrate, a dichroic mirror layer, an SiO2 layer, a ZnO layer, and a phosphor layer, which are sequentially stacked from the substrate. The dichroic mirror layer reflects at least part of light incident from the above. The phosphor layer includes a plurality of phosphors and ZnO between the phosphors.

Abstract: A phosphor includes a host crystal including Sr3MgSi2O8 crystal and SrMgSiO4 crystal and also includes Eu2+, or Eu2+ and Mn2+ as luminescent centers. Alternatively, a phosphor includes a host crystal including Sr3MgSi2O8 crystal and SrMgSiO4 and also includes Eu2+ as a luminescent center, the phosphor being free from Mn2+ as a luminescent center. A light-emitting device includes a phosphor layer containing the phosphor. A projector and a vehicle include the light-emitting device.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y?1, 0?z?1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, a low-refractive-index layer and a high-refractive-index layer. A submicron structure is defined on the photoluminescent layer and/or the light-transmissive layer. The low-refractive-index layer is located on or near the photoluminescent layer so that the photoluminescent layer is located between the low-refractive-index layer and light-transmissive layer. The high-refractive-index layer is located on or near the low-refractive-index layer so that the low-refractive-index layer is located between the high-refractive-index layer and the photoluminescent layer.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: ?a/nwav-a<Dint<?a where Dint is a center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship: 0.8Dint(min)<?a/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, ?a is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.

Abstract: A red phosphor material comprising an essential component represented by a formula of ALn1-x-yEuxSmyM2O8 as a main component, where A represents at least one selected from Li, Na, and K; Ln represents at least one selected from La and Gd; M represents at least one selected from W and Mo; and x and y are numerical values that satisfy 0.1?x+y?0.7 and 0.005?y?0.08. A light-emitting device includes an excitation light source and the red phosphor material that absorbs excitation light emitted by the excitation light source and emits red light.

Abstract: A red phosphor material includes an essential component represented by a formula of A2-2xRxEuySmzLnx-y-zM2O8 as a main component, where A represents at least one selected from Ca and Sr; R represents at least one selected from Li, Na, and K; Ln represents at least one selected from La, Gd, and Y; M represents at least one selected from W and Mo; and x, y, and z are numerical values that satisfy 0.2?x?0.7, 0.2?y+z?0.6, 0.005?z?0.04, and x?y?z?0. A light-emitting device includes an excitation light source and the red phosphor material that absorbs excitation light emitted by the excitation light source and emits red light.

Abstract: A phosphor material according to an embodiment of the present disclosure contains a major component represented by the formula A2-v-w-x-yBvLnwEuxSmyM2-zDzO8, where A is one or more elements selected from the group consisting of alkaline-earth metal elements; B is one or more elements selected from the group consisting of alkali metal elements; Ln is one or more elements selected from the group consisting of rare-earth elements other than Eu and Sm; M is one or more elements selected from the group consisting of W and Mo; D is one or more elements selected from the group consisting of Nb and Ta; and v, w, x, y, and z satisfy the inequalities 0?v?0.5, 0.15?x+y?0.7, 0?y?0.05, and 0<z?1.7 and the equation w+x+y=v+z.

Abstract: An oxychloride phosphor of the present disclosure includes divalent Eu arranged as an augmenting agent, at part of locations. The locations correspond to site of at least two kinds of predetermined substances included in a host crystal. A rate of the number of the divalent Eu with respect to the sum of the number of moles of the predetermined substance and the number of moles of the divalent Eu is less than 2%. When the predetermined substance is represented by A, the oxychloride phosphor is represented by a general formula of xAO.yEuO.SiO2.zCl. In this formula, A represents Sr and Ca, or Sr, Ca, and Mg, y indicates a value of not less than 0.002 and not more than 0.02, x+y indicates a value of more than 1.00 and not more than 1.30, and z indicates a value of not less than 0.20 and not more than 0.70.

Abstract: A phosphor material according to an embodiment of the present disclosure contains a major component represented by the formula A2-v-w-x-yBvLnwEuxSmyM2-zDzO8, where A is one or more elements selected from the group consisting of alkaline-earth metal elements; B is one or more elements selected from the group consisting of alkali metal elements; Ln is one or more elements selected from the group consisting of rare-earth elements other than Eu and Sm; M is one or more elements selected from the group consisting of W and Mo; D is one or more elements selected from the group consisting of Nb and Ta; and v, w, x, y, and z satisfy the inequalities 0?v?0.5, 0.15?x+y?0.7, 0?y?0.05, and 0<z?1.7 and the equation w+x+y=v+z.

Abstract: The present invention provides a wavelength conversion board comprising a substrate; one or more fluorescence members each containing a fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; and a flexible gel disposed around the fluorescence member. The present invention also provides a wavelength conversion board comprising a substrate; a fluorescence member containing fluorescence substance for converting excitation light into fluorescence, the fluorescence member being disposed on or above the substrate; a fluent material disposed around the fluorescence member; a light-transmissive plate parallel to the substrate; and a sealing member disposed around the fluent material in a cross section of the wavelength conversion board. The fluorescence member is interposed between the light-transmissive plate and the substrate in the cross section of the wavelength conversion board.

Abstract: A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm2. The wavelength conversion member contains at least one fluorescent substance selected from the group consisting of a (Sr1-x,Bax)3MgSi2O8:Eu2+ (0?x?1) fluorescent substance, a (Y1-y,Gdy)3(Al1-z,Gaz)5O12:Ce3+ (0?y<1, 0?z<1) fluorescent substance, and an Eu3+-activated fluorescent substance. The light source device has a high output and a high light-emitting efficiency.

Abstract: The present invention provides an oxynitride silicate fluorescent substance capable of output a light having a high luminance even when irradiated by an exciting light having a high energy density. The present invention is a yellow fluorescent substance represented by a chemical formula (Ba1-x-y-z,Srx)aSibOcNd:Eu2+y,Y3+z (0.9?a?1.1, 1.9?b?2.1, 1.9?c?2.1, 1.9?d?2.1, 0?x?1, 0<y<0.01, and 0?z<0.01).

Abstract: The present disclosure provides a (Ba1?z,Srz)3MgSi2O8:Eu2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba1?z,Srz)3MgSi2O8 based crystal where z satisfies 0?z<1 and a (Ba1?z,Srz)MgSiO4 based crystal where z satisfies 0?z<1 as a host crystal; and Eu2+ as a luminescent center.

Abstract: An embodiment of a probe card comprising: a probe base plate including a ceramic base plate and a plurality of conductive paths; and a plurality of contacts disposed on one face of the probe base plate and electrically connected to the conductive paths. The ceramic base plate may be provided with: a plurality of first layers having a heating element which generates heat by electric power and disposed at intervals in the thickness direction of the ceramic base plate; second layers each interposed between adjoining first layers; and a power supply path for supplying electric power for heating to the heating element.