Abstract: A modulation-demodulation apparatus of a relatively simple arrangement is able to prevent a bad influence caused due to interference between two local oscillators and a portable wireless communication apparatus uses this modulation-demodulation apparatus. In a modulation-demodulation apparatus using a local oscillator (105) for use in direct conversion type of a receiving system and a local oscillator (104) for use with a transmitting system, a ratio (C/D) between a reception frequency and an oscillation frequency of the reception local oscillator (105) and a ratio (A/B) between a transmission frequency and an oscillation frequency of the transmission local oscillator are made different from each other.

Abstract: The invention relates generally to the field of treating a nucleic acid. More particularly, the invention provides a method for amplifying a nucleic acid and an apparatus for amplifying a nucleic acid, as well as method and apparatus for synthesizing nucleic acid to be used for the amplification.

Abstract: A substrate treating apparatus is provided with a treatment chamber, a holding member, a heating member, and supplying members for alternately supplying the treatment chamber with first and second reacting substances. The apparatus is provided for forming a thin film on a substrate by supplying the first reacting substance to have the first reacting substance adsorbed on the substrate, removing the excess first reacting substance, then, supplying the second reacting substance to have it adsorbed on the substrate, and reacting it with the first reacting substance. The apparatus is provided with a control part for permitting the apparatus to perform the thin film forming treatment in a status where the number of product substrates lacks, in the case where the number of sheets of the product substrates held by the holding member is less than the maximum number of the product substrates that can be held by the holding member.

Abstract: A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

Abstract: Transmission diversity and adaptive array antenna transmission is executed with respect to a user to which a shared channel is assigned, or a pilot channel is shared a like a shared channel. By this means it is made possible to secure a large number of users without code resource shortages even where adaptive array antenna is applied to a shared channel.

Abstract: A transmission rate determining method that enables assignment of transmission rate (modulation scheme and coding rate) to be optimized with high accuracy in the AMC technique. In the method, in a base station, Doppler frequency detector 117 detects the Doppler frequency (moving speed) of each mobile station. MCS assignment section 125 corrects a relational expression of MCS (coding rate and modulation scheme) and CIR based on the Doppler frequency (moving speed) obtained in Doppler frequency detector 117, for example, corrects a threshold in CIR, and determines MCS optimal for CIR report value. Results of assignment in MCS assignment section 125 are output to coding section 101 and modulation section 103.

Abstract: To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: DIW is supplied toward a surface of a substrate to form a lower layer liquid film, which is then frozen to form a lower layer frozen film. Further, DIW cooled down to a temperature at which the lower layer frozen film will not melt is supplied toward a surface of the lower layer frozen film to form an upper layer liquid film, which is then frozen to form an upper layer frozen film in a layered structure. DIW which is at room temperature is thereafter supplied, thereby melting the entirety of the lower layer frozen film and the upper layer frozen film to remove these films together with particles off from the surface of the substrate.

Abstract: A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

Abstract: A proximity member moves in a moving direction (?X) in a condition that an opposed surface of the proximity member is disposed in the vicinity of a substrate surface and that a liquid-tight layer is formed between the opposed surface and the substrate surface, and nitrogen gas is discharged toward an upstream-side interface of the liquid-tight layer from the upstream side (+X) to the proximity member in the moving direction. Thus discharged nitrogen gas is blown selectively and in concentration against an exposed interface portion, a rinsing liquid forming the exposed interface portion is blown away from the substrate surface and the liquid-tight layer, and a substrate surface region which corresponds to the exposed interface portion is dried.

Abstract: The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

Abstract: The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

Abstract: The present invention is directed to improving the yield in fiber terminating processing, and to preventing the occurrence of transmission loss due to stress concentration at an optical fiber bend or due to variations in ambient temperature. In one exemplary embodiment, a channel is sandwiched between adhesive layers and an optical fiber is passed through the channel.

Abstract: A phase shifter selectively switches between a low-pass filter 13 and a high-pass filter 12 using single pole double throw switches 10a and 10b provided on the input and output sides, respectively, and operatively linked to each other. The single pole double throw switches 10a and 10b include FETs Q1c and Q1d that connect single pole side junctions and the low-pass filter, respectively, and inductance circuits (L1c and R2c, and L1d and R2d) connected in parallel with FETs Q1c and Q1d, respectively. The inductance circuits are respectively comprised of the inductor L1c and the resistor R2c connected in series and of the inductor L1 d and the resistor R2d connected in series.

Abstract: A board for high frequency device includes a plurality of electrode terminals connected to an electronic component or another electronic circuit board by flowable conducting material such as solder, and grooves formed in an electrode terminal of the plurality of electrode terminals and capable of accumulating solder or the like. Specifically, a high frequency component is mounted on the front surface of the high frequency device board, and the plurality of electrode terminals are formed on the rear surface of the high frequency device board. A ground electrode terminal included in the plurality of electrode terminals is formed at the center of the rear surface of the high frequency device board and connected to a ground. The grooves for accumulating solder or the like are formed in the ground electrode terminal. This reduces the possibility of short-circuit between adjacent electrode terminals due to the flowable conducting material such as solder.

Abstract: A high frequency module used as a unit circuit making up a phased array antenna, in which the module may be reduced in size with reduction in cost. A high frequency module 10 includes a dielectric substrate 1 having both surfaces metallized. The dielectric substrate has a first metallized layer 2 and a second metallized layer 3 formed on both surfaces and has a low noise amplifier and the phase shifter IC 9 mounted on the metallized layer 2 on one surface. The high frequency module 10 also includes a low noise transistor 7 and a distributed constant circuit 12, formed on the one surface of the dielectric substrate 1 to form the low noise amplifier together, and an input terminal 5, an output terminal 6 and power supply terminals 15A to 15D formed by leading out the metallized layer 2 on the one surface to the opposite side surface of the dielectric substrate 1 in such a manner as to maintain insulation from the metallized layer 3 on the opposite side surface.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: A biaxially oriented saturated polyester film made by a biaxial orientation method, includes a heat-seal side formed in at least one of two sides of the film, the heat-seal side being made by applying a low-temperature plasma treatment to a film surface so that the film surface has a composition ratio of the number of oxygen atoms to the number of carbon atoms, the composition ratio being not less than 105% and not more than 115% of a theoretical value and so that the heat-seal side is heat sealable at a heating temperature ranging from 100° C. to 200° C.