Abstract: A feedback system capable of accommodating different memory module loading. The feedback system utilizes the signal received by the data strobe feedback pin of a control chipset to simulate or to obtain memory module loading information so that timing of the data signal and data strobe signal can be adjusted accordingly. Therefore, data can be accurately written to or read from the memory module. The embodiment of this invention includes using a variable reference voltage source and a comparator to adjust the timing of the signal to the data strobe feedback pin, using independent simulating loads circuit and specially designed memory module with simulating load, and using a data strobe signal circuit that includes complete memory module loading.

Abstract: A buffer for varying data access speed. Combining the buffer with a memory such as a double data rate synchronous dynamic random access memory, the data transmission rate of a memory system can be enhanced. The buffer is coupled with a control chip set and several memory modules to provide functions of data analysis and assembly to satisfy a two-way data transmission interface and to obtain a higher data transmission rate. The buffer also has the function of isolating the electric connection between two sides. A single signal interface from a memory module can be converted to a complementary source synchronous signal by the buffer, so that a high-speed data transmission can be achieved. A memory system can apply several of such buffers to achieve an even higher data transmission speed.

Abstract: An input/output buffer capable of supporting multiple transmission logic bus specifications. The input/output buffer has a coordinating controller, a logic control circuit, a first transistor, a second transistor, a first resistor element, and a second resistor element. The logic control circuit picks up a microprocessor signal to determine a particular kind of microprocessors used. According to the microprocessor being using, conductivity of the first transistor, the second transistor, the first resistor element and the second resistor element are reassigned to fit the particular logic bus specification of the microprocessor. Hence, a single chipset on a main circuit board is able to accommodate various kinds of microprocessors.

Abstract: A control chipset having dual-definition data pins capable of reducing circuit layout to memory module slots. Using dual-definition data pins of the control chipset and multiplexing/de-multiplexing devices, the control chipset is able to sense the particular type of memory modules plugged into memory slots automatically and hence assigning the function to each data pin accordingly. Consequently, circuit layout from the control chipset to the data pins of far off memory slots is simplified and overall circuit length is greatly reduced.

Abstract: A multi-option setting device is provided for use in association with a connecting pin of a chipset for allowing user-selection from more than two setting options to set the chipset to perform one of more than two I/O functions through the associated connecting pin. The multi-option setting device includes voltage setting means for generating a user-specified input voltage; voltage comparison circuits for use to determine which pre-specified voltage range the user-specified input voltage lies; and latch circuits each for latching the corresponding output of the voltage comparison circuits. This allows the associated connecting pin to be optionally set to be used for a user-specified I/O function.

Abstract: A chip package structure having a substrate therein for accommodating a die. Power regions supplying power to various control units within the die are grouped together into at least two sections. At least one &pgr; filter is used to isolate different power regions on the substrate so that cross interference of noise signals are reduced and stability of the chip is improved. The &pgr; filter is positioned close to one of the corners of the substrate so that the layout of wiring on the substrate is facilitated.

Abstract: A memory control chip, control method and control circuit. Instead of accessing a plurality of memory modules in a memory bank by referencing the same clocking signal, each memory module references a clocking signal having the same frequency but a slightly different preset phase so that the data within each memory module is accessed at a slightly different time. Ultimately, simultaneous switch output noise is greatly reduced and fewer power/ground pins are required in a package.

Abstract: A layout structure of a central processing unit (CPU) that supports two different package techniques, comprising a motherboard that comprises the layout structure and a layout method. The layout structure of the preferred embodiment according to the present invention from up to down sequentially places a top signal layer, a grounded layer, a power layer having a grounded potential, and a bottom solder layer in the area where the signals of the CPU are coupled to the signals of the control chip, so that the signals that are placed on the bottom solder layer can refer to a grounded potential area of the power layer. Therefore, part of signals of the CPU that are coupled to the control chip can be placed on the bottom solder layer.

Abstract: A clock circuit for supporting a plurality of memory module types is provided. The clock circuit is connected to a first type memory module slot, and a second type memory module slot. The clock circuit includes a clock generator for producing a clock signal and a clock buffer having doubly defined clock pins for outputting the first type memory clock signal or the second type memory clock signal. The clock buffer receives the clock signal and outputs a first type memory clock signal to the first type memory clock pin. The doubly defined clock pin is also capable of outputting a second type memory clock signal to the second type memory clock pin. This invention is capable of using just a single clock buffer to drive a plurality of different memory module types.

Abstract: A conductive pad layout is implemented on a substrate for BGA packaging structure. The substrate has a top trace surface on which is attached a chip, and a bottom trace surface. The top trace surface includes a first contact pad, a second contact pad placed closer to the chip than the first contact pad, and a reference contact pad placed adjacent to the second contact pad. A first bonding wire connects the first contact pad to the chip, and second and third bonding wires of shorter length respectively connect the second contact pad and the reference contact pad to the chip. Thereby, critical signal can pass through the second bonding wire and second contact pad with reduced interference. A reference dummy ball pad is also placed adjacent to a ball pad corresponding to the second contact pad on a bottom trace surface of the substrate to reduce interference.

Abstract: A suspend-to-RAM controlling circuit includes a RAM (random access memory) controller, a logic circuit and at least one RAM module. The RAM controller has a controlling pin connected to the logic circuit. Each of the RAM modules has a first enable pin and a second enable pin connected to output pins of the logic circuit. The RAM module is driven to the STR (suspend-to-RAM) state after receiving an STR signal from the logic circuit. Therefore, the RAM controller can provide STR signals to a plurality of RAM modules by only one controlling pin in incorporation with the logic circuit.

Abstract: A control circuit, a chipset and a method capable of saving the terminal resistors on a motherboard. Through the determination of connection of a pull-up enable line to a first voltage source Vdd via a resistor, an equivalent resistance is set between the source terminal and the drain terminal of a field effect transistor. The equivalent resistance is almost identical to the terminal resistor and hence can replace the resistor on the motherboard. When the pull-up enable line is connected to the first voltage source Vdd via a resistor, an equivalent resistance of about 45-60&OHgr; is established between the source and drain terminal of the field effect transistor. The equivalent resistance is connected in parallel with an input/output pad and a second voltage source Vtt to replace the original externally connected terminal resistor rt2 at the other end of the bus.

Abstract: A memory access control method and system is provided for use on a computer system to control the memory access operation by a central processing unit (CPU) to a memory unit in a more efficient manner. This memory access control method and system is characterized in the capability of switching the memory access operation between a waiting mode and a non-waiting mode based on the current L1write-back condition of the read requests from the CPU. In the waiting mode, the memory unit responds to each read request in such a manner as to wait until the L1write-back signal of the read request is issued and then either perform a read operation for the current read request if the L1write-back signal indicates a cache miss, or perform a cache write-back operation if the L1write-back signal indicates a cache hit.

Abstract: A dual processor adapter card with a plurality of electrical pins for inserting into a processor slot on a mainboard by which the adapter card is electrically coupled to the mainboard. There is a first and a second processor socket on the adapter card for carrying a first and a second processor respectively. The first and the second processor socket each has a plurality of corresponding pins, a portion of the pins of the first and the second processor socket corresponds to a portion of the electrical pins. Corresponding pins are coupled together. Furthermore, each of the pins that act as a terminal lead in the first and the second processor socket is connected to a pull-up resistor, and the pull-up resistor is connected to a terminal voltage. In addition, a zero-delay buffer for synchronizing clock pulse signals and a voltage regulator for regulating a power voltage into a suitable working voltage are mounted on the adapter card and coupled to the first and the second processor socket respectively.

Abstract: An apparatus for providing both supports including synchronous dynamic random access memory module and the double data rate dynamic random access memory module is provided. A motherboard can support standard synchronous dynamic random access memory and dual data rate dynamic random access memory by using the disable and enable functions of the terminator. The invention reduces manufacturing production waste due to complex fabrication process of memory module. In addition, the trouble of upgrading the computer by consumer can be eliminated.

Abstract: A method for initializing a computer system employs BIOS to set up a temporary storage area and a temporary setting control flag. When the user alters the configuration settings of the computer system, BIOS saves the new configuration settings into the temporary storage area as temporary configuration settings and sets the temporary setting control flag. When the computer system reboots, BIOS first unsets the temporary setting control flag and initializes the computer system according to the temporary configuration settings in the temporary storage area. If BIOS can successfully initialize the computer system with the temporary configuration settings, the CMOS RAM will be updated with the temporary configuration settings. If BIOS can not successfully initialize the computer system with the temporary configuration settings, in the later initialization of the computer system the BIOS will initialize the computer system in accordance with the configuration settings originally stored in the CMOS RAM.

Abstract: A method and the associated devices for implementing a suspend-to-RAM (STR) mode of operation in a computer system utilizing the self-refreshing capability of synchrotron DRAM. To switch into the STR mode of operation, system memory data in a first control chip (the north bridge) is first transferred to a memory unit under the direction of a second control chip (the south bridge). The voltage level at the clock-enable pin of the system memory is pulled down under the direction of the south bridge or the north bridge. Power to the north bridge is cut upon receiving a signal from a basic input/output system.

Abstract: The present invention is a placement that is utilized in a 4 layers motherboard and a main bridge chip substrate. The layout adds a placement of the power rings and the power paths on the top signal layer and the bottom solder layer of the main bridge chip on the motherboard, the second layer and the third layer are planned as grounded layers, so that all signals on the top signal layer and the bottom solder layer on the motherboard can easily refer to the grounded layer. The layout of the power ring and the power path on the top signal layer on the motherboard is symmetrical to the layout of the power ring and the power path on the bottom solder layer on the motherboard, and all power paths couple to the corresponding power rings. The power bonding pads/solder balls are arranged on the area where the power rings and the power paths pass through, and the moderate quantity of the grounded bonding pads are arranged on the both sides of the power paths.

Abstract: This invention relates to a layout structure for providing stable power supply to a four-layer motherboard and a main bridge chip substrate. In the invention, on the top signal layer and power path of the bottom solder layer for layout of the main bridge chip and on the power ring, the decoupling capacitors are connected in between the ground bonding pads/solder balls and the power bonding pads/solder balls of the power paths and power rings, so as to provide a stable power supply for the operation of the main bridge chip. In this invention, the ground bonding pad/solder ball connected with each power bonding pad/solder ball can be the closest ground bonding pad/solder ball to the power bonding pad/solder ball.

Abstract: A ball grid array packaging structure for sealing a silicon chip on a substrate is disclosed. The substrate includes a front wiring layer and a back wiring layer. The front wiring layer includes a plurality of inner power rings and an outer power ring. The inner power rings are attached and together they surround a central region where the silicon chip is attached. The inner power rings and the outer power ring have a substantially identical width and the outer power ring surrounds all the inner power rings. The back wiring layer has a large number of interface power balls and core power balls. The interface power balls may be further subdivided into groups of inner power balls, while each group of inner power balls corresponds and couples with one of the inner power rings of the front wiring layer. The core power balls connect with the outer power ring and surround the interface power balls.