Patents by Inventor Nan Wang

Nan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220261489
    Abstract: A capability management method and apparatus, a computer device, and the like relate to permission management of a kernel object in an operating system, for example, permission management of a kernel object in a microkernel architecture. In the method, two types of information are stored in a capability node of a capability owner: information used to indicate that a capability is granting and information used to indicate a granted capability. A capability association relationship between a grantor and a grantee is established by recording the two types of information, so that capability copying is avoided in a capability granting procedure, and capability deletion is avoided in a procedure of rejecting a capability by the grantee, thereby ensuring a deterministic latency while implementing capability revocation and granting. The method may be applied to a smartphone system, an unmanned driving system, or the like.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Nan WANG, Zipeng ZHANG
  • Patent number: 11412605
    Abstract: Provided herein is a plasma generating device for medical treatment and sanitizing purposes which comprises a control unit and a plasma generator connecting to the control unit. The plasma generator comprises a plasma tube having a first end and a second end; a first dielectric layer disposed on the inner surface of the plasma tube; a first electrode disposed on the first dielectric layer; a second dielectric layer disposed on the first electrode; a second electrode disposed on the second dielectric layer; and a plasma nozzle disposed on the bottom cover on the second end of the plasma tube.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: August 9, 2022
    Assignee: EVERNEW BIOTECH, INC.
    Inventor: Cheng-Nan Wang
  • Patent number: 11411927
    Abstract: A method of establishing a secure communication channel from a first edge device that is in a first network zone across a secure overlay network to a second edge device that is in a second network zone, so that access to a computing device that is in the second network zone can be authenticated by an authentication service that is in the first network zone, includes the steps of establishing a first secure communication channel from the first edge device to the secure overlay network, receiving a request to join the secure overlay network along with administrator credential information and, responsive to the request, transmitting the administrator credential information to the authentication service for authentication through the first secure communication channel and the first edge device, and establishing a second secure communication channel from the second edge device to the secure overlay network if the authentication is received from the authentication service.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: August 9, 2022
    Assignee: VMware, Inc.
    Inventors: YiSan Zhao, Nan Wang, Wen Wang, Xiangrui Meng, Jingtao Zhang
  • Patent number: 11406018
    Abstract: A double-sided and multilayer flexible printed circuit (FPC) substrate contains: a body, multiple tilted vias passing through the body, a sputtering layer, multiple conductive portions, and multiple copper circuit layers. The sputtering layer is adhered on the body and the multiple tilted vias. A respective conductive portion is formed in a respective titled via and is connected with the sputtering layer. The multiple copper circuit layers are located on a top and a bottom of the body and are connected with the sputtering layer, and the multiple copper circuit layers are connected via the multiple conductive portions.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: August 2, 2022
    Assignee: APLUS SEMICONDUCTOR TECHNOLOGIES CO., LTD.
    Inventors: Sui-Ho Tsai, Cheng-Neng Chen, Yun-Nan Wang, Chih-Yuan Chao, Hsueh-Tsung Lu
  • Publication number: 20220238667
    Abstract: Disclosed are a semiconductor structure and a forming method thereof.
    Type: Application
    Filed: January 13, 2022
    Publication date: July 28, 2022
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan WANG
  • Publication number: 20220230651
    Abstract: A speech signal dereverberation processing method includes extracting an amplitude spectrum feature and a phase spectrum feature of a current frame in an original speech signal, extracting subband amplitude spectrums from the amplitude spectrum feature corresponding to the current frame, determining, based on the subband amplitude spectrums and by using a first reverberation predictor, a reverberation strength indicator corresponding to the current frame, and determining, based on the subband amplitude spectrums and the reverberation strength indicator, and by using a second reverberation predictor, a clean speech subband spectrum corresponding to the current frame.
    Type: Application
    Filed: March 2, 2022
    Publication date: July 21, 2022
    Applicant: Tencent Technology (Shenzhen) Company Limited
    Inventors: Rui Zhu, Juan Juan Li, Yan Nan Wang, Yue Peng Li
  • Patent number: 11394689
    Abstract: Described herein are systems, methods, and software to enhance network traffic management for virtual machines. In one implementation, a host for a virtual machine may identify applications available for execution on the virtual machine from mounted application volumes and identify firewall rules for the applications. Once identified, the host may identify network traffic for the virtual machine, and forward or block the network traffic for the virtual machine based on the firewall rules.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: July 19, 2022
    Assignee: VMware, Inc.
    Inventors: Zhao YiSan, Shengbo Teng, Nan Wang, Tracy Yan Chi
  • Publication number: 20220203266
    Abstract: A device and method for degassing an on-load tap-changer (OLTC) of a transformer for convenient on-site operation. The degassing device includes an OLTC. The OLTC is respectively connected with an oil suction pipe and an oil injection pipe. One end of the oil suction pipe extends to the inside bottom of the OLTC, and the other end of the oil suction pipe extends to the outside of the OLTC to connect with an oil suction and degassing device. One end of the oil injection pipe extends to an upper part inside the OLTC, and the other end of the oil injection pipe extends to the outside of the OLTC to connect with a vacuum oil injection device. The present disclosure has the advantages of convenient on-site operation, excellent degassing effect, simple structure and convenient installation, reduces degassing time and manpower and investment in maintenance, and improves degassing quality.
    Type: Application
    Filed: December 30, 2020
    Publication date: June 30, 2022
    Inventors: Yuxiao Zhou, Lu Liu, Honggang Han, Xuchen Lu, Jianhong Kong, Defu Wei, Tie Guo, Hao Chen, Yang Liu, Nan Wang, Zijian Zhao, Shiqing Wang, Chang Liu, Dawei Jiang, Yue Gao
  • Patent number: 11366209
    Abstract: A method for determining a change in a distance, a location prompting method and an apparatus and a system thereof are provided. The method includes: sending, by a receiving terminal, a paring request to a server for the server to forward the paring request to a transmitting terminal, and to allocate a frequency band for the receiving terminal and the transmitting terminal after the transmitting terminal accepts the paring request; acquiring, by the receiving terminal, an acoustic wave signal of a frequency sent by the transmitting terminal, wherein the frequency is determined by the transmitting terminal based on the allocated frequency band; determining, by the receiving terminal, a change in the acquired acoustic wave signal; and determining, by the receiving terminal, a change in a distance between the transmitting terminal and the receiving terminal according to the change in the acquired acoustic wave signal.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: June 21, 2022
    Assignee: ADVANCED NEW TECHNOLOGIES CO., LTD.
    Inventors: Nan Wang, Qiang He, Zhijun Du
  • Patent number: 11362214
    Abstract: The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate; forming at least one sacrificial layer and at least one liner layer, that are alternately stacked over each other, on the substrate; etching the at least one liner layer and the at least one sacrificial layer until the substrate is exposed, to form a plurality of fins, discretely arranged on the substrate; and etching a portion of a thickness of the substrate, such that a width of the etched portion of the substrate at a bottom of the at least one sacrificial layer is less than a width of the at least one liner layer of the plurality of fins.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: June 14, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang
  • Patent number: 11360616
    Abstract: A stylus or other tactile-based input device can receive different types of tactile input from a user. The tactile input sensing functions can be performed by a touch input sensor, such as a capacitive sensing device, and a compressive force sensor, such as a capacitive gap sensor. A touch input sensor can be integrated into an input device in a low profile form and overlap the compressive force sensor so that both touch input and compressive force input can be detected in the same regions of the stylus. Both types of tactile input can be received at the user's natural grip location.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: June 14, 2022
    Assignee: APPLE INC.
    Inventors: Robert M. Proie, Robert U. Liu, Wing Kong Low, Nan Wang
  • Patent number: 11362095
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having at least one first region, at least one second region and at least one third region; forming at least one first fin on the at least one first region, at least one second fin on the at least one second region and at least one third fin on the at least one third region; forming a first opening in the first fin; forming a second opening in the second fin; forming a first epitaxial layer in the first opening and the second opening; forming a third opening in the at least one third fin; removing at least a portion of the first epitaxial layer in the at least one second fin to form a fourth opening; and forming a second epitaxial layer in the third opening and the fourth opening.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: June 14, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang
  • Publication number: 20220179267
    Abstract: Provided are a display unit and a display apparatus, the display unit includes a back plate and a print circuit board disposed on the back plate, wherein the print circuit board is connected to the back plate through a screw, and is provided with a first electrostatic discharge region and a first electrostatic discharge unit; the first electrostatic discharge region is connected to the back plate through the screw to form a first electrostatic discharge channel, and the first electrostatic discharge unit is connected to the back plate to form a second electrostatic discharge channel.
    Type: Application
    Filed: June 29, 2021
    Publication date: June 9, 2022
    Inventors: Qi CAO, Yong SHU, Xinlei WANG, Ming WANG, Nan WANG, Junjie JIANG, Xian WANG
  • Patent number: 11355622
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate, sequentially forming at least two sacrificial layers on the substrate, and forming a liner layer between any adjacent sacrificial layers of the at least two sacrificial layers. The method also includes forming a hard mask layer on a top layer of the at least two sacrificial layers, and sequentially etching the hard mask layer, the at least two sacrificial layers, the liner layer, and a portion of the substrate, thereby forming a plurality of fins that are discretely arranged on a remaining portion of the substrate. The method also includes forming a dummy gate structure across the plurality of fins on the remaining portion of the substrate, and removing a portion of the at least two sacrificial layers under the dummy gate structure, thereby forming tunnels.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: June 7, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang
  • Publication number: 20220170375
    Abstract: The present invention belongs to the technical field of turbine cooling of aero-engine and gas turbine, and relates to the honeycomb-like helically cavity cooling structure of turbine blade. The honeycomb-like helically cavity cooling structure of turbine blade includes hollow turbine blade, honeycomb-like helically cavity and pin fins. Some cooling channels are arranged inside the hollow the hollow turbine blade, the cooling gas flows through the tunnels and cools the blade. Multi-arrays of honeycomb-like helically cavity are arranged in the blade wall, for cooling gas to enter and convective cooling. A cylindrical pin fin is arranged in the center of the honeycomb-like helically cavity. In each unit, the inlet hole and film hole are located on both sides of the blade wall, and the center lines of them are parallel in the same vertical plane.
    Type: Application
    Filed: December 15, 2020
    Publication date: June 2, 2022
    Inventors: Dong LV, Nan WANG, Xiaofang WANG, Xingao KONG, Yinan SUN
  • Publication number: 20220160614
    Abstract: The present invention relates to hair coloring and/or bleaching compositions that can be applied at less aggressive pH environment using relatively low oxidizing agent amounts, as well as their kits and methods thereof. The compositions exhibit low odor and substantially reduced hair fiber damage, are compatible with current dyes and dye precursor systems and result in excellent dye deposition with substantially no lift.
    Type: Application
    Filed: March 18, 2020
    Publication date: May 26, 2022
    Inventors: Nan WANG, Ursula Christina GLASER, David SARRO, Giuseppe ESPOSITO
  • Publication number: 20220156077
    Abstract: The invention provides an artificial intelligence computing device and a related product. The artificial intelligence computing device is used for executing machine learning computation. According to the device of the invention, for the instructions in the more than two instruction sets forming the loop body, the same operation code in the operation code storage area is used for the repeated instructions, so that the storage space of the operation code is saved, the code amount of each instruction in the instruction set in the second time slice can be reduced, the instruction storage space can also be saved, and the operation efficiency is improved.
    Type: Application
    Filed: March 20, 2020
    Publication date: May 19, 2022
    Inventors: Nan WANG, Xiaobing CHEN, Yongzhe SUN, Yongwei ZHAO
  • Publication number: 20220147835
    Abstract: A knowledge graph construction system and method are disclosed. The system generates a recommended subject entity, at least one recommended object entity, and at least one recommended relation for a piece of text data according to the text data and a plurality of triples. The system displays the recommended object entity and the recommended relation at a current paragraph of the text data according to the recommended subject entity for user to select. The system receives a confirmed message related to the recommended subject entity, a recommended object entity selected by user from the at least one recommended object entity, and a recommended relation selected by user from the at least one recommended relation. The system adds the recommended subject entity and the selected recommended object entity and recommended relation to the triples, and constructs a current knowledge graph by using the triples according to the confirmed message.
    Type: Application
    Filed: December 3, 2020
    Publication date: May 12, 2022
    Inventors: Hsin-Yi KUO, Wen-Nan WANG, Jia-Wei KAO, Wen-Fa HUANG, Po-Hsien CHIANG, Fu-Jheng JHENG, Yi-Hsiu LEE, Yu-Chuan YANG
  • Patent number: 11329055
    Abstract: Semiconductor cell and its forming method and operating method are provided. The semiconductor device includes: a substrate with a first region; a first nanopillar, formed on a substrate surface of the first region and perpendicular to the substrate surface; a first source/drain region, formed at a bottom of the first nanopillar and in a portion of the substrate in the first region; a first gate structure, surrounding the first nanopillar and formed on the first source/drain region; and a second source/drain region, formed at a top of the first nanopillar and on the first gate structure.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: May 10, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang
  • Patent number: 11315796
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a substrate having a first region, second regions and third regions; and forming a patterned structure on the substrate. The patterned structure includes at least one first patterned layer on the first region, at least one second patterned layer on the second region and at least one third patterned layer on the third region, the at least one first patterned layer is discrete from the at least one second region and the at least one second region is discrete from the at least one third region. The method also includes removing the second patterned layer; and etching the substrate using the first patterned layer and the third patterned layer as an etching mask to form a base substrate, the first fin on the base substrate and the third fin on the base substrate.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: April 26, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang