Abstract: A display device of a hybrid cargo handling vehicle and a hybrid cargo handling vehicle equipped with the display device are provided, with which whether operation is performed by engine drive or motor drive or engine plus motor drive and whether driving operation, i.e. energy consuming operation or energy recovering operation is performed is indicated on a monitor screen, and also fuel consumption rate of the engine, state of charge of the battery, and position of center of gravity of the vehicle are indicated on the monitor screen in both traveling and cargo handling operations, so that the operator is possible by monitoring the displayed indications to perform safe operation of the cargo handling vehicle with high efficiency and high cargo handling power without occurrence of slip down of the cargo or fall down of the vehicle.

Abstract: In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.

Abstract: To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring.

Abstract: A driving force control device can set driving force characteristics which conform to tastes of drivers using one vehicle thus giving the easy-to-drive feeling to the drivers. An E/G13ECU possesses three modes 1 to 3 as control modes and selects one mode from these modes based on a manipulation input using a mode selection switch. Further, any one of the mode out of these modes 1 to 3 is preset in the E/G13ECU as a temporary changeover mode, and the E/G13ECU changes over a mode selected by the mode selection switch and the preset temporary changeover mode alternatively by the temporary changeover switch.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: The driving force control unit for vehicle comprises a driving condition detecting unit for detecting the vehicle driving condition, a selector for selecting one of driving modes by manipulation, the driving modes including a first mode having a driving force characteristic suitable for normal driving and a second mode having a suppressed driving force, and driving force setting unit for setting a driving force indication value based on the selected mode and the vehicle driving conditions. The selector being formed by a multiple switch having a push switch which turns to ON state when a pressing force direction manipulation is applied, and other switch which turns to ON state when manipulation other than the pressing force direction is applied, the second mode is selected by the ON manipulation of the push switch.

Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 ? thickness. The GaN n+-layer (3) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 ?m thickness. The p-layer 6 has about a 1.0 ?m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).

Abstract: The present invention provides a driving force control unit for a vehicle having an accelerator opening degree detecting unit for detecting accelerator opening degree, a driving condition detecting unit for detecting engine driving condition, a driving force setting unit for setting a driving force indication value according to a plurality of different driving force characteristics based on the accelerator opening degree and the engine driving condition, a selector for selecting a driving force characteristic from the plural of different driving force characteristics by manipulation. The driving force setting unit setting the driving force indication value according to the selected driving force characteristic.

Abstract: A high water-repellent composition includes: a ultrafine pigment whose surface is treated with a monooctyl silane and whose primary particle diameter is in a range of 1 nm to 15 ?m, a silicone resin and/or liquid silicon rubber, and a volatile solvent. The content of the ultrafine pigment surface-treated with monooctyl silane is in a range of 40 to 80 percent by weight relative to the weight of the composition excluding the volatile solvent.

Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 ? thickness. The GaN n+-layer (3) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 ?m thickness. The p-layer 6 has about a 1.0 ?m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).

Abstract: The driving force control unit comprises a plurality of control modes for controlling a driving force, each of control modes having each driving force characteristic; a vehicle driving condition detecting unit for detecting a vehicle driving condition; a selector for selecting one control mode from the plurality of control modes; a driving force setting unit for setting a driving force indication value according to the driving force characteristic selected by the selector based on the vehicle driving condition; and a shift lever position detector for detecting a shift lever position of a transmission. The control mode includes a reverse control mode having a reverse driving force characteristic suitable for traveling the vehicle in reverse direction. The driving force setting unit changes the control mode to the reverse control mode when the shift lever is detected in a position of a reverse range, and sets the driving force indication value according to the reverse driving force characteristic.

Abstract: The driving force control unit for a vehicle comprises a plurality of control modes for controlling a driving force, each of control modes having each driving force characteristic, a vehicle driving condition detecting unit for detecting a vehicle driving condition, a selector for selecting one control mode from the control modes, a temporary selector for changing the current mode to other mode, and a driving force indication value setting unit for setting a driving force indication value according to the vehicle driving condition and the driving force characteristic corresponding to the selected mode by the selector or the temporary selector.

Abstract: The driving force control unit for vehicle comprises a driving condition detecting unit for detecting the vehicle driving condition, a selector for selecting one of driving modes by manipulation, the driving modes including a first mode having a driving force characteristic suitable for normal driving and a second mode having a suppressed driving force, and driving force setting unit for setting a driving force indication value based on the selected mode and the vehicle driving conditions. The selector being formed by a multiple switch having a push switch which turns to ON state when a pressing force direction manipulation is applied, and other switch which turns to ON state when manipulation other than the pressing force direction is applied, the second mode is selected by the ON manipulation of the push switch.