Abstract: A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Abstract: A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Abstract: A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Abstract: A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Abstract: An ultrasonic device includes an element substrate and a wiring substrate. The element substrate includes an ultrasonic element and an element interconnect terminal connected to the ultrasonic element. The wiring substrate includes a wiring terminal and an opening portion that defines an opening extending through the wiring substrate. The element interconnect terminal and the wiring terminal are connected so as to oppose each other. The opening portion encloses the ultrasonic element in plan view as seen from a thickness direction of the wiring substrate.

Abstract: An ultrasonic device includes an element substrate, an ultrasonic transducer array disposed on a rear surface of the element substrate, and having a plurality of ultrasonic transducers arranged in an array, an electrode line connected to the ultrasonic transducer on the rear surface of the element substrate, and drawn to a terminal region located outside the ultrasonic transducer array in a planar view of the element substrate viewed from a normal direction, a sealing plate bonded to the rear surface side of the element substrate, and a through electrode penetrating the sealing plate in a thickness direction and connected to an electrode pad of the electrode line at a position, which is located outside a region opposed to the ultrasonic transducer array of the sealing plate and is opposed to the electrode pad.

Abstract: To derive a feasible solution for an operation plan problem for storage tanks for storing liquefied natural gas, which is a complicated mixed-integer non-linear problem, given tank initial state information, reception plan information, and feed plan information, two solving processes are executed alternately two or more times, respectively: a first solving process that replaces a mixed-integer non-linear programming problem with a mixed-integer linear programming problem by linear approximation of a non-linear expression in non-linear constraints containing the non-linear expression, and solves the problem to derive provisional solutions or final solutions for a reception pattern that prescribes a storage tank that is to receive liquefied natural gas, and a discharge pattern that prescribes a storage tank that is to discharge liquefied natural gas, and a second solving process that replaces a mixed-integer non-linear programming problem with a continuous non-linear programming problem by provisionally fixing

Abstract: An electronic substrate includes: an electronic element provided on a first face of a semiconductor substrate having a through hole; a passive element provided on a second face of the semiconductor substrate; a first part of an interconnection pattern provided on the second face of the semiconductor substrate; an insulating layer provided on the second face of the semiconductor substrate; and a second part of the interconnection pattern provided on the insulating layer.

Abstract: An ultrasonic device includes an element substrate and a wiring substrate. The element substrate includes an ultrasonic element and an element interconnect terminal connected to the ultrasonic element. The wiring substrate includes a wiring terminal and an opening portion that defines an opening extending through the wiring substrate. The element interconnect terminal and the wiring terminal are connected so as to oppose each other. The opening portion encloses the ultrasonic element in plan view as seen from a thickness direction of the wiring substrate.

Abstract: An electronic substrate including: a base substrate having an active face and a rear face; and a plurality of inductor elements formed on or above the active face, or formed on or above the rear face.

Abstract: An electronic substrate includes: an electronic element provided on a first face of a semiconductor substrate having a through hole; a passive element provided on a second face of the semiconductor substrate; a first part of an interconnection pattern provided on the second face of the semiconductor substrate; an insulating layer provided on the second face of the semiconductor substrate; and a second part of the interconnection pattern provided on the insulating layer.

Abstract: An electronic substrate includes: an electronic element provided on a first face of a semiconductor substrate having a through hole; a passive element provided on a second face of the semiconductor substrate; a first part of an interconnection pattern provided on the second face of the semiconductor substrate; an insulating layer provided on the second face of the semiconductor substrate; and a second part of the interconnection pattern provided on the insulating layer.

Abstract: A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole.

Abstract: A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: To derive a feasible solution for an operation plan problem for storage tanks for storing liquefied natural gas, which is a complicated mixed-integer non-linear problem, given tank initial state information, reception plan information, and feed plan information, two solving processes are executed alternately two or more times, respectively: a first solving process that replaces a mixed-integer non-linear programming problem with a mixed-integer linear programming problem by linear approximation of a non-linear expression in non-linear constraints containing the non-linear expression, and solves the problem to derive provisional solutions or final solutions for a reception pattern that prescribes a storage tank that is to receive liquefied natural gas, and a discharge pattern that prescribes a storage tank that is to discharge liquefied natural gas, and a second solving process that replaces a mixed-integer non-linear programming problem with a continuous non-linear programming problem by provisionally fixing

Abstract: A substance component detection device includes a sensor substrate which is provided inside a concave groove, in which when an opening is closed by a measurement-target skin to form a closed space, and includes a projection group having a plurality of projections, a light source section which emits light toward the projection group, and light-receiving section which detects Raman scattering light generated by the projection group.

Abstract: A semiconductor device includes: a semiconductor substrate including an active element formation face on which an active element is formed; detection electrodes detecting a remaining amount of ink by being wet in the ink; an antenna transmitting and receiving information; a storage circuit storing information relating to the ink; and a control circuit controlling the detection electrodes, the antenna, and the storage circuit.

Abstract: A detection device includes a flow channel for a fluid sample, a suction section adapted to draw the fluid sample into the flow channel, an optical device disposed in the flow channel, a light source adapted to irradiate the optical device with light, a light detection section adapted to detect light emitted from the optical device, a microbalance sensor chip having a piezoelectric substrate provided with an oscillation electrode, and disposed in the flow channel, and a quantitative analysis section adapted to perform quantitative analysis on the fluid sample based on output from the light detection section and the microbalance sensor chip. The optical device has a metal nanostructure including projections ranging in size from 1 through 1000 nm, and emits light representing the fluid sample adsorbed to the metal nanostructure.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.