Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: The objective of the invention is to provide a solution for tissue adhesion prevention and a method for tissue adhesion prevention that are applicable to general surgery and in which covering condition during surgery is stable and convenient. The invention is the solution for tissue adhesion prevention of which the active ingredient is trehalose. Also, it contains at least one or more among antioxidants, chelates, antiseptics, hemostatics, anti-inflammatory agents, and polysaccharides, mucopolysaccharides, salts of polysaccharides and salts of mucopolysaccharides having lubricating properties. This solution for tissue adhesion prevention is provided as any form of perfusion fluid, spray fluid, solution for spray or vaporization administration, foam-like aerosol preparation, injection solution for intravenous fluids, intravenous fluid.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: A method of making a thin film transistor device, including forming and patterning a semiconductor film to form first and second semiconductor films in, respectively, low-voltage driven and high-voltage driven thin film transistor formation regions. The method also includes forming a first insulating film on the first and second semiconductor films, and forming a first gate electrode on the first insulating film in the low-voltage driven thin film transistor formation region. Additionally, a second insulating film is formed on the entire surface of the resultant structure above the substrate, and a second gate electrode is formed on the second insulating film in the high-voltage driven thin film transistor formation region. The method also includes etching the first and second insulating films, thus forming first and second gate insulating films below, respectively, the first and second gate electrodes, with the second gate insulating film being wider than the second gate electrode.

Abstract: The invention provides an active matrix type TFT LCD in which a driving voltage of pixel TFTs is reduced. A pixel is formed with two thin film transistors, i.e., a positive-voltage-applying n-channel TFT for applying a data voltage having a positive polarity to a pixel electrode and a negative-voltage-applying p-channel TFT for applying a data voltage having a negative polarity to the pixel electrode. A source electrode of the positive-voltage-applying TFT is connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the positive voltage; and a gate electrode of the same is connected to a gate bus line for applying the positive voltage. A source electrode of the other TFT is also connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the negative voltage; and a gate electrode of the same is connected to a gate bus line for applying the negative voltage.

Abstract: There is provided an information processing apparatus in which a CPU and an audio processing unit are coupled by a bus. The audio processing unit includes a ring buffer that temporarily retains audio data, and performs an input/output process of the audio data. An interrupt signal generator generates a buffer empty signal, when the audio data is output from a buffer in the ring buffer and the buffer is empty, decimates the buffer empty signal in accordance with a sampling frequency of audio, and then feeds the interrupt signal that survives the decimation to the CPU. The CPU, upon receiving the buffer empty signal, issues a DMA transfer instruction for writing the audio data into the empty buffer in the ring buffer.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin film 14 over a substrate 10; the step of forming band-shaped portion 16 for blocking crystal growth of the semiconductor thin film in the semiconductor film or over the semiconductor film; and the step of causing an energy beam 18 of a continuous wave to scan in a direction intersecting the longitudinal direction of the portion for blocking crystal growth. The energy beam is caused to scan, intersecting the portion for blocking the crystal growth, whereby the crystal growth can be interrupted when the application region of the energy beam intersects the portions for blocking the crystal growth. Even when a solid semiconductor thin film which is not patterned in islands is crystallized, the semiconductor thin film of good crystals can be formed with high yields while the film is prevented from peeling.

Abstract: A multi-graphics processor system includes a CPU; a first GPU connected to the CPU via an input/output interface; and a second GPU connected to the first GPU via a second-GPU interface. The first GPU is provided with a second-GPU bus for communicating the CPU and the second GPU via the second-GPU interface. The CPU communicates with the second GPU via the second-GPU bus after receiving a signal indicating the timing of the data communication.

Abstract: A liquid crystal display panel manufacturing apparatus is provided with a stage for fixing a substrate having an optical film adhered to at least one of surfaces of the substrate. The stage has a suction hole for attracting the substrate by suction. The stage has an interposition member located around a region provided with the suction hole, and the interposition member has a closed frame-like form in a plan view. A display panel manufacturing apparatus that can stably fix the substrate is provided.

Abstract: A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Abstract: The invention provides a curing resin composition to be used for a sealant or an end-sealing material for a display element, which comprises a curing resin together with a photopolymerization initiator and/or a curing agent and, has a carbonyl group derived from a (meth)acryl group together with an epoxy group and/or a hydroxyl group derived from an epoxy group and, a cured product of which has nitrogen atoms at a ratio of 3 to 10% by atom in the total of carbon atoms, hydrogen atoms and nitrogen atoms in the composition; a volume resistance of 1×1013 ?·cm or higher; a dielectric constant of 3 or higher at 100 kHz; and a glass transition temperature of 80 to 150° C.

Abstract: It is an object of the present invention to generate more realistic pattern by mapping a texture to a three-dimensional polygon. An image generation device has image memory, in which are stored basic textures to be mapped to generate overall patterns on polygons by mapping and modulation textures with which amplitude modulation is applied to the patterns generated by mapping of the basic textures, and a pixel engine which, by amplitude modulation mapping of modulation textures, performs amplitude modulation processing on the patterns generated by mapping of basic textures.

Abstract: A DMA controller controls DMA transfer in an information processing system. Input and output devices are a transfer source or a transfer destination in DMA transfer and request DMA transfer. A DMAC activating unit is provided with an event monitoring unit and an event register. The event register registers an event subject to monitoring. The event monitoring unit detects an event generated in the input and output devices and determines whether the detected event matches an event registered in the event register. If it is determined that the events match, the event monitoring unit activates the DMA controller.

Abstract: A one component resin composition curable with a combination of light and heat, which comprises (1) an epoxy resin, (2) an acrylic ester monomer and/or methacrylic ester monomer, or an oligomer thereof, (3) a latent epoxy curing agent, (4) a photo radical initiator, and (5) a compound having two or more thiol groups per molecule, wherein the ingredient (5) is contained in an amount of 0.001 to 5.0 parts by weight per 100 parts by weight of this resin composition. According to the present invention, a one component resin composition curable with a combination of light and heat, which has excellent curability especially in a light-shielded area can be provided. Also, a liquid crystal sealant composition curable with a combination of light and heat, which is applicable to the one-drop-fill method and has excellent curability in light-shielded areas and adhesion reliability, especially high-temperature and high-humidity adhesion reliability, can be provided.

Abstract: A main CPU extracts a contour and a contour candidate, which are visually important parts of an image to be rendered, according to, for example, polygon data representing an image of one frame. Further, a GPU performs rendering on data stored in a graphic memory according to the polygon data representing the image. Moreover, the GPU performs antialiasing on the contour and contour candidate extracted by the main CPU. Then, the GPU overwrites data representing the antialiased contour and contour candidate onto the data representing the image stored in the graphic memory.

Abstract: A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Abstract: It is an object of the invention to provide a curing resin composition that scarcely causes pollution of a liquid crystal owing to elution of its components to the liquid crystal material and therefore, causes little unevenness of color in liquid crystal display in the case of using it as a sealant for a liquid crystal display element or an end-sealing material for a liquid crystal display element in fabrication of a liquid crystal display element and that is excellent in the storage stability and therefore, optimum for fabrication of a display apparatus especially by one drop fill process and to provide a sealant for a display element and an end-sealing material for a display element using the composition.

Abstract: When a concentration of access requests on a specific bank occurs, the delay time is caused due to the competition among the accesses, thereby lowering the processing speed of an information processing apparatus as a whole. A data transfer arbitration unit 172 sequentially transfers data to be recorded to a memory controller 160 that records data in memory having a plurality of banks. A selector 174 selects any DMAC 170 from among a plurality of DMACs, irrespective of priority sequence of transfer service for the DMAC. A transmitter 176 transmits, to a control-side transfer unit 114, data requested to be transferred by the selected DMAC 170. The selector 174 selects consecutively the DMAC 170 so that the transfer service for the same DMAC is consecutively executed, and determines the number of consecutive selections so that a transfer across the banks of the DMAC 170 occurs by a plurality of the transfer services.

Abstract: Grooves (3R, 3G, 3B) corresponding to red, green and blue respectively are formed on a substrate (40), and the edge portion of each groove (3R, 3G, 3B) is formed so as to be farther from a side of substrate (40) in order. The edge portion of each groove (3R, 3G, 3B) is immersed in an organic EL solution (8R, 8G, 8B) of corresponding color, the grooves (3R, 3G, 3B) are severally filled with the organic EL solution (8R, 8G, 8B) of corresponding color using capillary phenomenon, and thus a full-color organic EL display device is manufactured.