Abstract: A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

Abstract: A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

Abstract: The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin film 14 over a substrate 10; the step of forming band-shaped portion 16 for blocking crystal growth of the semiconductor thin film in the semiconductor film or over the semiconductor film; and the step of causing an energy beam 18 of a continuous wave to scan in a direction intersecting the longitudinal direction of the portion for blocking crystal growth. The energy beam is caused to scan, intersecting the portion for blocking the crystal growth, whereby the crystal growth can be interrupted when the application region of the energy beam intersects the portions for blocking the crystal growth. Even when a solid semiconductor thin film which is not patterned in islands is crystallized, the semiconductor thin film of good crystals can be formed with high yields while the film is prevented from peeling.

Abstract: A method and system for optimizing the processing of graphics is disclosed. The system may comprise at least one geometry processor and at least one graphics processor. A communication channel permits communication between the geometry and graphics processors. A control processor may communicate with the geometry and graphics processor through the communications channel. A method of processing graphics data in a computer system is provided to determine whether the geometry and graphics processors are being efficiently utilized. If necessary, one or more of the geometry and graphics processors are selectively assigned or unassigned to improve the efficiency of the graphics processing circuitry in performing the graphics task.

Abstract: The present invention relates to a laser crystallization apparatus and a laser crystallization method that can achieve high throughput even when a CW laser is used. The laser crystallization apparatus includes a movable stage supporting a substrate on which a semiconductor layer is formed, a device directing a laser beam to a plurality of optical paths in a time-division manner, and optical devices condensing and applying the laser beam passing through the optical paths to the semiconductor layer on the substrate supported by the stage. A first region of the semiconductor layer is scanned with the laser beam in one direction and a second region of the semiconductor layer is scanned with the laser beam in the reverse direction.

Abstract: A common transfer material is provided that is used for a common transfer electrode provided between electrodes formed adjacently on respective inner sides of paired substrates facing each other. The common transfer material contains a resin and electrically-conductive and has a content of non-electrically-conductive filler that is at least 0 part by mass and at most 1 part by mass with respect to 100 parts by mass of the resin. A liquid-crystal panel using the common transfer material as well as a method of manufacturing the liquid-crystal panel are provided. The common transfer material with which the reliability of the liquid-crystal panel can be improved, the liquid-crystal panel using the common transfer material and the method of manufacturing the liquid-crystal panel can thus be provided.

Abstract: The present invention ensures that object images to be subjected to a predetermined image processing are subjected to such image processing depending on predetermined coefficients of semi-transparency, and that a portion of the object images closest to a virtual viewpoint is processed last. This successfully provides an image based on a first image processing (?-blending, for example) depending on coefficients of semi-transparency in a natural and unfailing manner without using a technique such as Z sorting.

Abstract: An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.

Abstract: It is an object of the invention to provide a curing resin composition that scarcely causes pollution of a liquid crystal owing to elution of its components to the liquid crystal material and therefore, causes little unevenness of color in liquid crystal display in the case of using it as a sealant for a liquid crystal display element or an end-sealing material for a liquid crystal display element in fabrication of a liquid crystal display element and that is excellent in the storage stability and therefore, optimum for fabrication of a display apparatus especially by one drop fill process and to provide a sealant for a display element and an end-sealing material for a display element using the composition.

Abstract: A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than ±1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.

Abstract: A portable electronic device and an entertainment system that can give a user a sense of familiarity by generating a proper character using an identification number and by displaying it, for example, on a display means include an identification-number holding section which holds a proper identification number through a bus, which is connected to an interface to connect to a game-machine main body having a program-execution function. Input operation is performed by a player at an input-operation section. At an operation-information generation section, an operation information is generated in response to the input operation at the input-operation section. The RAM provides for use for operation information stores the operation information received from the operation-information generation section. A character-information generation section generates proper character information in accordance with the operation information and gene information when the latter is received through the game-machine main body.

Abstract: In a case of a liquid crystal display apparatus, a gate insulating film of a TFT driven at a low voltage (3.3 V or 5 V) is constituted by one insulating film, and a thickness thereof is set to, for example, 30 nm. This TFT has a structure in which LDD regions (low concentration impurity regions) are not provided. A TFT having a CMOS structure, which is driven at a high voltage (18 V), has a gate insulating film constituted by two insulating films having a thickness of, for example, 130 nm in total. In an n-type TFT, a low concentration impurity region is provided on a drain side. A p-type TFT has a structure having no LDD region. A pixel TFT has a gate insulating film constituted by two insulating films, and LDD regions provided in both of its source/drain.

Abstract: Grooves (3R, 3G, 3B) corresponding to red, green and blue respectively are formed on a substrate (40), and the edge portion of each groove (3R, 3G, 3B) is formed so as to be farther from a side of substrate (40) in order. The edge portion of each groove (3R, 3G, 3B) is immersed in an organic EL solution (8R, 8G, 8B) of corresponding color, the grooves (3R, 3G, 3B) are severally filled with the organic EL solution (8R, 8G, 8B) of corresponding color using capillary phenomenon, and thus a full-color organic EL display device is manufactured.

Abstract: An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.

Abstract: It is an object of the present invention to generate more realistic pattern by mapping a texture to a three-dimensional polygon.

Abstract: There is provided an apparatus including a plurality of processors 20, which generates a plurality of candidate status variable values as a candidate of status variable value at which the status of object image is fixed and which selects a status variable value having the highest consistency with the condition from among them, and an influence controller 10 obtains the status variable value from each processor to broadcast the obtained status variable value to all processors at the same time. Since each processor selects a status variable value having the highest consistency with the condition from among the plurality of candidates, an appropriate image can be obtained. Moreover, the processor can generate the status variable value at the next point in consideration of the status variable values of all processors sent from the influence controller so as to obtain an image in which a plurality of objects is influenced each other.