Patents by Inventor Noriaki Oda
Noriaki Oda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450624Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.Type: GrantFiled: May 29, 2020Date of Patent: September 20, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Noriaki Oda, Teruo Okina
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Patent number: 11444039Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.Type: GrantFiled: May 29, 2020Date of Patent: September 13, 2022Assignee: SANDISK TECHNOLOGIES LLCInventors: Noriaki Oda, Teruo Okina
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Publication number: 20210375791Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Noriaki ODA, Teruo OKINA
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Publication number: 20210375790Abstract: Semiconductor devices can be formed over a semiconductor substrate, and interconnect-level dielectric material layers embedding metal interconnect structures can be formed thereupon. In one embodiment, a pad-connection-via-level dielectric material layer, a proximal dielectric diffusion barrier layer, and a pad-level dielectric material layer can be formed. Bonding pads surrounded by dielectric diffusion barrier portions can be formed in the pad-level dielectric material layer. In another embodiment, a layer stack of a proximal dielectric diffusion barrier layer and a pad-and-via-level dielectric material layer can be formed. Integrated pad and via cavities can be formed through the pad-and-via-level dielectric material layer, and can be filled with bonding pads containing dielectric diffusion barrier portions and integrated pad and via structures.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Noriaki ODA, Teruo OKINA
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Publication number: 20150086865Abstract: The present invention provides a positive electrode for a secondary battery that can suppress a phenomenon in which, after the solid electrolyte interface is formed once, when a damaged portion where a solid electrolyte interface is partially broken happens to arise in the solid electrolyte interface, the continued deterioration in the performance of charge-discharge cycle of the secondary battery is induced thereby, and a secondary battery using said positive electrode for a secondary battery. The positive electrode for a secondary battery according to the present invention comprises water that is chemically adsorbed beforehand in the positive electrode, wherein the concentration of the chemically adsorbed water, which is comprised in the positive electrode beforehand, is set in the range of 0.03% by mass to 0.15% by mass based on the positive electrode.Type: ApplicationFiled: April 12, 2013Publication date: March 26, 2015Applicant: NEC ENERGY DEVICES, LTD.Inventor: Noriaki Oda
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Patent number: 8564090Abstract: A semiconductor device include an insulating interlayer formed over a substrate; an electrical fuse which is composed of a first wiring formed in the insulating interlayer, and has a cutting portion; and a second wiring and a third wiring, formed respectively on both sides of the cutting portion to extend along the cutting portion in the same layer as the first wiring. Air gaps formed to extend along the cutting portion are respectively provided between the cutting portion and the second wiring and between the cutting portion and the third wiring.Type: GrantFiled: December 9, 2010Date of Patent: October 22, 2013Assignee: Renesas Electronics CorporationInventor: Noriaki Oda
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Patent number: 8330276Abstract: The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films.Type: GrantFiled: July 15, 2010Date of Patent: December 11, 2012Assignee: Renesas Electronics CorporationInventors: Noriaki Oda, Shinichi Chikaki
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Patent number: 8310056Abstract: In a semiconductor device, a lower multi-layered interconnect structure, an intermediate via-level insulating interlayer, and an upper multi-layered interconnect structure are stacked in this order in a region overlapped with a bonding pad in a plan view; upper interconnects and vias of the upper multi-layered interconnect structure are formed so as to be connected to the bonding pad in the pad placement region; the intermediate via-level insulating interlayer has no electro-conductive material layer, which connect the interconnects or vias in the upper multi-layered interconnect structure with interconnects or vias in the lower multi-layered interconnect structure, formed therein; and the ratio of area occupied by the vias in the via-level insulating interlayers contained in the lower multi-layered interconnect structure is smaller than the ratio of area occupied by the vias in the via-level insulating interlayers contained in the upper multi-layered interconnect structure.Type: GrantFiled: May 4, 2010Date of Patent: November 13, 2012Assignee: Renesas Electronics CorporationInventors: Noriaki Oda, Shinichi Chikaki
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Patent number: 8146044Abstract: Aiming at providing a method of designing a semiconductor device capable of producing a semiconductor device which expresses performances adapted to required performances, the present invention sets a plurality of suites of device parameters, containing parameters relevant to transistor characteristics (transistor parameters) and parameters relevant to interconnect characteristics (interconnect parameters) corresponded to the transistor characteristics, for a single CMOS generation, selecting, out of the plurality of suites, a suite matched to performances required for a semiconductor to be designed, and designing the semiconductor device.Type: GrantFiled: June 30, 2008Date of Patent: March 27, 2012Assignee: Renesas Electronics CorporationInventor: Noriaki Oda
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Publication number: 20110140235Abstract: A semiconductor device include an insulating interlayer formed over a substrate; an electrical fuse which is composed of a first wiring formed in the insulating interlayer, and has a cutting portion; and a second wiring and a third wiring, formed respectively on both sides of the cutting portion to extend along the cutting portion in the same layer as the first wiring. Air gaps formed to extend along the cutting portion are respectively provided between the cutting portion and the second wiring and between the cutting portion and the third wiring.Type: ApplicationFiled: December 9, 2010Publication date: June 16, 2011Applicant: RENESAS ELECTRONICS CORPORATIONInventor: Noriaki ODA
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Publication number: 20110049719Abstract: The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films.Type: ApplicationFiled: July 15, 2010Publication date: March 3, 2011Inventors: Noriaki Oda, Shinichi Chikaki
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Publication number: 20100314777Abstract: A semiconductor device includes: a semiconductor substrate; an interlayer insulating film provided on the semiconductor substrate; an interconnect (second interconnect trench) composed of a metallic film provided in an interconnect trench (second copper interconnect) and a plug composed of a metallic film provided in a connection hole (via hole) coupled to the second interconnect trench, both of which are provided in the interlayer insulating film; a first sidewall provided on a side surface of the via hole; and a second sidewall provided on a side surface of the second interconnect trench, and a thickness of the first sidewall in vicinity of a bottom of the side surface of the via hole is larger than a thickness of the second sidewall in vicinity of a bottom of the second interconnect trench.Type: ApplicationFiled: May 3, 2010Publication date: December 16, 2010Applicant: NEC Electronics CorporationInventor: Noriaki Oda
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Patent number: 7846830Abstract: The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film 116, a TiN film 115 and a pad metal film 117 are formed in this sequence on the upper surface of a Cu interconnect 112. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer 113, and thereafter a polyimide film 118 is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film 117, and finally a solder ball 120 is joined thereto.Type: GrantFiled: October 12, 2007Date of Patent: December 7, 2010Assignee: NEC Electronics CorporationInventors: Toshiyuki Takewaki, Noriaki Oda, Yorinobu Kunimune
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Publication number: 20100301488Abstract: In a semiconductor device, a lower multi-layered interconnect structure, an intermediate via-level insulating interlayer, and an upper multi-layered interconnect structure are stacked in this order in a region overlapped with a bonding pad in a plan view; upper interconnects and vias of the upper multi-layered interconnect structure are formed so as to be connected to the bonding pad in the pad placement region; the intermediate via-level insulating interlayer has no electro-conductive material layer, which connect the interconnects or vias in the upper multi-layered interconnect structure with interconnects or vias in the lower multi-layered interconnect structure, formed therein; and the ratio of area occupied by the vias in the via-level insulating interlayers contained in the lower multi-layered interconnect structure is smaller than the ratio of area occupied by the vias in the via-level insulating interlayers contained in the upper multi-layered interconnect structure.Type: ApplicationFiled: May 4, 2010Publication date: December 2, 2010Applicant: NEC Electronics CorporationInventors: Noriaki Oda, Shinichi Chikaki
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Patent number: 7763968Abstract: In a semiconductor device, a plurality of interconnections are formed in an interconnection formation insulating interlayer, and a plurality of reinforcing elements are substantially evenly formed in blank areas of the interconnection insulating interlayer in which no interconnection is formed. A wire-bonding electrode pad is provided above the interconnection formation insulating interlayer so that a pad area, on which the wire-bonding electrode pad is projected, is defined on the interconnection formation insulating interlayer. A part of the reinforcing elements included in the pad area features a larger size than that of the remaining reinforcing elements.Type: GrantFiled: September 26, 2006Date of Patent: July 27, 2010Assignee: NEC Electronics CorporationInventors: Hiroyuki Kunishima, Noriaki Oda
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Patent number: 7714449Abstract: A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.Type: GrantFiled: December 7, 2007Date of Patent: May 11, 2010Assignee: NEC Electronics CorporationInventor: Noriaki Oda
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Patent number: 7692265Abstract: There is provided a semiconductor device excellent in reliability. The semiconductor device is comprised of a semiconductor substrate, an insulating portion having a multilayer insulating film composed of an etch stopper film, an insulating film, an etch stopper film, an insulating film, an etch stopper film and an insulating film provided on an upper portion of the semiconductor, fuses provided on the insulating portion, and a seal ring composed of a copper containing metal film, a barrier metal film, a copper containing metal film and a barrier metal film embedded in the insulating portion so as to surround a region just below the fuses.Type: GrantFiled: March 31, 2005Date of Patent: April 6, 2010Assignee: NEC Electronics CorporationInventors: Toshiyuki Takewaki, Noriaki Oda
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Patent number: 7508082Abstract: There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.Type: GrantFiled: August 24, 2007Date of Patent: March 24, 2009Assignee: NEC Electronics CorporationInventors: Toshiyuki Takewaki, Noriaki Oda
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Publication number: 20090007045Abstract: Aiming at providing a method of designing a semiconductor device capable of producing a semiconductor device which expresses performances adapted to required performances, the present invention sets a plurality of suites of device parameters, containing parameters relevant to transistor characteristics (transistor parameters) and parameters relevant to interconnect characteristics (interconnect parameters) corresponded to the transistor characteristics, for a single CMOS generation, selecting, out of the plurality of suites, a suite matched to performances required for a semiconductor to be designed, and designing the semiconductor device.Type: ApplicationFiled: June 30, 2008Publication date: January 1, 2009Applicant: NEC ELECTRONICS CORPORATIONInventor: Noriaki ODA
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Publication number: 20080290516Abstract: A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.Type: ApplicationFiled: May 29, 2008Publication date: November 27, 2008Applicant: NEC ELECTRONICS CORPORATIONInventor: Noriaki ODA