Abstract: Herein disclosed is a mobile communication apparatus, comprising: a body provided with a liquid crystal screen (5) having image data or character data displayed thereon, and an operating unit (6) for selectively performing operations, the body being divided into first and second housings (2 and 3) along a lateral direction perpendicular to a rotation axis; rotating means (4) for connecting the liquid crystal screen (5) with the operating unit (6) with the liquid crystal screen (5) with the operating unit (6) being rotatable with respect to each other around the rotation axis extending in the longitudinal direction of the liquid crystal screen (5) with the operating unit (6); a system control unit (21) for selectively setting predetermined operation modes in response to the rotation positions of the liquid crystal screen (5) with the operating unit (6) assumed when the liquid crystal screen (5) with the operating unit (6) are rotated with respect to each other through the rotating means (4).

Abstract: A differential drive semiconductor optical modulator includes: a differential driver circuit having output pads which can output a pair of differential signals; a transmission-line substrate having transmission lines connected to the output pads and ground lines; and semiconductor modulators mounted on the transmission-line substrate, arranged in series along a common optical axis; terminal resistors connected to terminal ends of the transmission lines and inductances interposed between the semiconductor modulators and the terminal resistors, on the transmission-line substrate, producing an appropriate optical modulation waveform with a high extinction ratio and enhanced modulation bandwidth.

Abstract: In a provided semiconductor device, a plurality of seal rings each made of a conductive material is formed along a periphery of the semiconductor chip and as to surround the circuit formation portion, the seal rings being connected with the semiconductor substrate and being buried in the plurality of wiring insulating films in such a manner as to extend over the wiring insulating films, and one or more slit-like notches are formed at specified positions in the plurality of seal rings in such a manner that the respective slit-like notches in two seal rings being adjacent to each other are not aligned.

Abstract: A semiconductor device should have a structure that allows locating electronic components in a region under a bonding pad. The semiconductor device includes a bonding pad constituting the external connection terminal; a region under the bonding pad including at least two copper layers and a connection via plug, under said bonding pad, disposed so as to connect copper layers that form a pair out of the at least two copper layers; a seal ring constituted of an annular conductor, disposed so as to surround the region under the bonding pad, and to connect a lower one of the copper layers that form said pair to copper layer to form a pair with the lower copper layer; and an interconnect connected to the bonding pad outside the seal ring.

Abstract: A wiring structure includes a first wiring having a first wiring width, and a second wiring formed in the same layer as a layer in which the first wiring is formed, and having a second wiring width greater than the first wiring width. The second wiring is electrically connected to the first wiring. Both of the first and second wirings are composed of copper or an alloy predominantly containing copper therein. The first and second wirings have the same thickness as each other. A ratio of an area of the second wiring to an area of the first wiring is N:1 where N is equal to or greater than 2,000 and equal to or smaller than 200,000,000 (2,000?N?200,000,000).

Abstract: A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse element made of refractive metal and bridging the fuse terminals. The fuse element is formed as a common layer with the protective cover films covering the interconnect lines.

Abstract: A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse element made of refractive metal and bridging the fuse terminals. The fuse element is formed as a common layer with the protective cover films covering the interconnect lines.

Abstract: A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the under layer. The first conductive portion is formed in a first concave portion which passes through the first insulating layer to the under layer. The first conductive portion includes a first barrier metal layer and a first metal portion. The first barrier metal layer is formed on a side wall and a bottom surface of the first concave portion. The first metal portion is formed on the first barrier metal layer such that the rest of the first concave portion is filled with the first metal portion. The first metal portion includes a first alloy including copper and aluminium.

Abstract: In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

Abstract: A method of manufacturing a semiconductor device according to the present invention forms a laminate metal film having a copper metal layer and a barrier metal, and once immerses the laminate metal film in a solution including organic acid having at least one carboxyl group before a heat treatment, thereby removing from the laminate metal film an oxide which is the source of oxygen that diffuses during the heat treatment.

Abstract: A differential drive semiconductor optical modulator includes: a differential driver circuit having output pads which can output a pair of differential signals; a transmission-line substrate having transmission lines connected to the output pads and ground lines; and semiconductor modulators mounted on the transmission-line substrate, arranged in series along a common optical axis; terminal resistors connected to terminal ends of the transmission lines and inductances interposed between the semiconductor modulators and the terminal resistors, on the transmission-line substrate, producing an appropriate optical modulation waveform with a high extinction ratio and enhanced modulation bandwidth.

Abstract: In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

Abstract: A method of manufacturing a semiconductor device according to the present invention forms a laminate metal film having a copper metal layer and a barrier metal, and once immerses the laminate metal film in a solution including an organic acid having at least one carboxyl group before a heat treatment, thereby removing from the laminate metal film an oxide which is the source of oxygen that diffuses during the heat treatment.

Abstract: In a provided semiconductor device, a plurality of seal rings each made of a conductive material is formed along a periphery of the semiconductor chip and as to surround the circuit formation portion, the seal rings being connected with the semiconductor substrate and being buried in the plurality of wiring insulating films in such a manner as to extend over the wiring insulating films, and one or more slit-like notches are formed at specified positions in the plurality of seal rings in such a manner that the respective slit-like notches in two seal rings being adjacent to each other are not aligned.