Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.

Abstract: In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.

Abstract: The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

Abstract: A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

Abstract: An organic electroluminescent device including an organic thin-film transistor element having at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: An electrooptical device includes a display element having a plurality of pixels, a lenticular lens which is arranged at a view side of the display element and spatially separates the pixels, and an observation optical system which is arranged at the view side with respect to the lenticular lens. An image of the pixels by the lenticular lens is formed between the observation optical system and a front focal point of the observation optical system.

Abstract: An organic electroluminescent device including an organic thin-film transistor element having at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

Abstract: An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

Abstract: A gas supply method supplies a source gas produced by heating and sublimating a solid source material in a source material container to a consuming area. The method includes the steps of: (a) flowing a carrier gas through a processing gas supply line and measuring a gas pressure therein; (b) heating the solid source material to produce the source gas; (c) supplying a carrier gas which has the same flow rate as the carrier gas in the step (a) to the source material container and measuring a gas pressure in the processing gas supply line while flowing the source gas together with the carrier gas through the processing gas supply line; and (d) calculating the flow rate of the source gas based on the pressure measurement values obtained in the steps (a) and (c), and the flow rate of the carrier gas.

Abstract: An illuminating device includes light emitting elements extending in a lengthwise direction and a light guide plate having a first principal surface for emitting light from the light emitting elements and a second principal surface facing the first principal surface. The light guide plate has light guide regions corresponding to the light emitting elements. The light emitting elements overlap the light guide plate on a side of the second principal surface of the light guide plate in plan view. The side of the second principal surface of the light guide plate has first sectional surfaces, on which light originated from each of the light emitting elements is incident. The side of the second principal surface of the light guide plate has second sectional surfaces, each having a reflection surface for reflecting the light originated from each light emitting element toward the first sectional surface, corresponding to the light emitting elements.

Abstract: An image display apparatus capable of switching a display mode between a directional display mode where a first image is displayed in a first viewing direction and a second image is displayed in a second viewing direction and a non-directional display mode where the same image is displayed in both the first and second viewing directions. The apparatus includes an image forming unit and an optical member. The optical member is disposed adjacent to an emitting side of the image forming unit and is used for switching the display mode. The optical member includes two light-transmitting plate members, a lens member disposed between the two plate members, a refractive-index variable medium sealed in a gap between the lens member and the two plate members, and a refractive-index adjusting unit that adjusts a refractive index of the refractive-index variable medium. in order to switch between the directional and non-directional display mode.

Abstract: The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

Abstract: A hydrous oxide film is formed on the surface of a superplastic forming aluminum alloy sheet. The superplastic forming aluminum alloy sheet can be formed without applying a lubricant to a die, exhibits excellent releasability, and prevents scratches due to sliding between the die and the sheet.

Abstract: The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs. The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

Abstract: An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 34 disposed in a processing vessel 24 capable of being vacuumized. Thereafter, a plasma is generated in the processing vessel 24, so that a metal target 70 is ionized by the plasma to generate metal ions in the processing vessel 24. Then, a thin film is deposited on the surface of the object to be processed including a surface in the recess, by supplying a bias power to the stage 34 so as to draw the metal ions into the object to be processed placed on the stage 34 by the supplied bias power. In the present invention, a wattage of the bias power is varied within a range in which the surface of the object to be processed is not substantially sputtered.

Abstract: An image display apparatus capable of switching a display mode between a directional display mode of displaying a first image in a first viewing direction and a second image in a second viewing direction and a non-directional display mode of displaying the same image in both the first and second viewing directions includes an image forming unit and an optical member. The image forming unit forms an image and emits image light representing the image. The optical member is disposed adjacent to an emitting side of the image forming unit and is used for switching the display mode. The optical member includes two light-transmitting plate members, a lens member disposed between the two plate members and having a predetermined refractive index, a refractive-index variable medium sealed in a gap between the lens member and the two plate members, and a refractive-index adjusting unit that adjusts a refractive index of the refractive-index variable medium.

Abstract: To provide a display device with high reliability, which is capable of supporting a display panel well even when the display panel is enlarged, and capable of radiating the heat generated in the display panel well. A display device 100 of the present invention has an organic EL panel (display panel) 150 and a reinforcing structure 160 provided on the backside of the display panel 150. The reinforcing structure 160 comprises a base plate 161 forming a part adhered to a back face of the organic EL panel 150, and a heat radiation member 170 provided on the base plate 161.

Abstract: An object of the present invention is to provide a A display device capable of narrowing the area of the frame. In order to achieve this object, the display device according to the present invention has a substrate having a plurality of arranged display elements and a wiring layer of a power source on the peripheral side; a bank layer for mutually separating the display elements; an electrode layer for covering the plurality of display elements and the bank layer; and a sealing substrate for further covering the electrode layer by joining the peripheral portion of the substrate and the sealing portion circling around the periphery via a joining element such as an adhesive; wherein the adhesive. The periphery of the sealing substrate is positioned inside the periphery of the substrate, and the peripheral portion of the electrode layer is connected to the wiring of the power source within the sealing portion.