Abstract: The present disclosure discloses a mud pressure wave signal modulation apparatus and method, which relate to the technical field of petroleum drilling engineering. The apparatus includes: a motor (5), a valve plate (3), a main control circuit (23), a motor drive control circuit, and a downhole communication circuit; the valve plate (3) is driven by the motor (5) to be rotated around an axial direction perpendicular to a flow direction of drilling fluid; the motor (5) and the valve plate (3) are disposed in a drilling fluid channel (2), and the drilling fluid channel (2), the motor (5), the valve plate (3), the main control circuit (23), the motor drive control circuit and the downhole communication circuit are disposed in a drill collar.

Abstract: A method for aligning molecular orientations of liquid crystals and/or polymeric materials into spatially variant patterns uses metamasks. When non-polarized or circularly polarized light is transmitted through or reflected by the metamasks, spatially varied polarization direction and intensity patterns of light can be generated. By projecting the optical patterns of the metamasks onto substrates coated with photoalignment materials, spatially variant molecular orientations encoded in the polarization and intensity patterns are induced in the photoalignment materials, and transfer into the liquid crystals. Possible designs for the metamask use nanostructures of metallic materials.

Abstract: Provided are a reception configuration method and apparatus, a reception control method and apparatus, a terminal, a base station and a storage medium. The reception configuration includes: determining a detection result of indication information within a first time length in a DRX cycle, where the DRX cycle includes an on duration and an off duration; and determining a DRX operation according to the detection result.

Abstract: Display panel and display device are provided. The display panel includes: a non-display area including a first non-display area and a second non-display area oppositely arranged along a first direction, and a third non-display area and a fourth non-display area oppositely arranged along a second direction, the first direction intersecting the second direction; a first electrode connection structure at least in the third non-display area and/or the fourth non-display area; and a first area running through the display panel along the first direction, and the first electrode connection structure being outside the first area.

Abstract: An electrode holder comprises a bottom plate (10) and an electrode arm (100). The bottom plate (10) comprises at least one coupling structure for mounting a container or a sachet holder to it in a defined positional relation to the electrode arm. The electrode arm (100) comprises a clamp (55) to hold an electrode and is equipped to guide an electrode held by the clamp (70) to a container or sachet holder mounted to the at least one coupling structure.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A workpiece data processing method and apparatus are for accurately determining a relationship between production equipment processing parameters/ambient condition data and workpiece quality inspection results.

Abstract: Curable polyolefin composition comprising: (A) polyolefin having at least two aliphatic unsaturated bonds per molecule; (B) wax with melting point of 30 to 100° C.; (C) organopolysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule; and (D) catalytic amount of hydrosilylation reaction catalyst, wherein content of component (A) is 20 to 80 mass %, content of component (B) is 10 to 75 mass %, and content of component (C) is 1 to 20 mass %, each based on the total mass of components (A) to (D). The composition can be cured to form a cured product capable of storing and releasing thermal energy, and preventing the wax leaking/pumping out during heat cycling.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A thermal interface material is provided. The thermal interface material comprises: (A) a polyolefin having at least two hydroxy groups per molecule; (B) at least one thermally conductive filler; (C) a phase change material with a melting point of 25 to 150° C.; and (D) a coupling agent. A content of component (B) is at least 80 mass %, a content of component (C) is 0.01 to 1 mass %, and a content of component (D) is 0.1 to 1 mass %, each based on a total mass of the thermal interface material. The thermal interface material becomes softer as its temperature increases. Meanwhile, the thermal interface material generally does not exhibit pumping-out in electronic devices during power cycling.

Abstract: Various embodiments of the teachings herein include anomaly detection methods for a dynamic control system. An example method includes: using a g network to initialize a hidden state distribution of the system; receiving a measurement value of a sensor and a state value of a trigger at a current point of time; receiving a sampling point into an f network to perform a prediction to obtain a second sampling point; using an h network to map the second sampling point into a sensor measurement value space to perform a prediction to obtain a probability distribution of a measurement value of the sensor in the dynamic control system at the current point of time; and determining whether an anomaly exists in the dynamic control system by comparing the measurement value obtained from real-time monitoring and the probability distribution obtained from a prediction.

Abstract: Techniques for heat sinks and cold plates for compute systems are disclosed. In one embodiment, a heat sink includes two sub-heat sinks that are mechanically connected but thermally isolated. The two sub-heat sinks can independently cool different dies on the same integrated circuit component. In another embodiment, a system includes an integrated circuit component that is cooled by a first water block and a second water block. The first water block forms a loop with a gap in it, and the second water block has a pedestal that extends through the gap in the first water block to contact the integrated circuit component. The first water block and the second water block can independently cool different dies on the same integrated circuit component.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A composition contains: (a) curable silicone composition including: (i) a vinyldimethylsiloxy-terminated polydimethylpolysiloxane with a viscosity of 30 to 400 mPa*s; (ii) a SiH functional crosslinker; and (iii) a hydrosilylation catalyst; where the molar ratio of crosslinker SiH functionality to vinyl functionality is 0.5:1 to 1:1; (b) alkyl trialkoxysilane and/or a mono-trialkoxysiloxy terminated dimethylpolysiloxane treating agent; (c) filler mix containing: (i) 40 wt % or more of spherical and irregular shaped AlN particles, both having an average size of 30 micrometers or more, the spherical AlN fillers are 40-60 wt % of the weight of the AlN fillers; (ii) 25-35 wt % spherical Al2O3 particles with an average size of 1-5 micrometers; (iii) 10-15 wt % of additional thermally conductive filler with a 0.1-0.

Abstract: A process includes immersing a device in a cooling fluid, the cooling fluid comprising an alkyl modified silicone oil having the following average chemical structure (I) : (CH 3) 3SiO- [ (CH 3) 2) SiO] m- [R (CH 3) SiO] n-Si (CH 3) 3 (I) where: R in each occurrence is an alkyl or substituted alkyl having 6 or more and at the same time 17 or fewer carbon atoms; subscript m has a value of one or higher and at the same time less than 22, subscript n has a value of one or higher, and the sum of m+n is greater than 5 and at the same time less than 50.

Abstract: A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.

Abstract: Provided is a thermal interface material containing a divinyl polydimethylsiloxane, a chain extender, a crosslinker, 80 volume-percent or more thermally conductive filler, treating agent composition, platinum hydrosilylation catalyst, and up to 0.2 weight-percent hydrosilylation inhibitor; where the wherein weight-percent values are relative to thermal interface material composition weight, volume-percent values are relative to thermal interface material composition volume, the molar ratio of silyl hydride groups to vinyl groups in the thermal interface material composition is 0.4 or more and at the same time is 1.0 or less, and the molar ratio of silyl hydride functionality from the chain extender to silyl hydride functionality from the crosslinker is 13 or more and at the same time 70 or less.