Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: Various embodiments of the teachings herein include a simulation model calibration method. For example, a method may include: obtaining prior distributions of at least two model parameters in a to-be-calibrated simulation model; obtaining a constraint condition of the at least two model parameters, wherein the constraint condition is used for indicating an association relationship between the model parameters; and performing at least one round of iteration on the at least two model parameters according to the prior distributions and the constraint condition, to obtain at least one parameter group applicable to the simulation model, wherein the parameter group comprises parameter values corresponding to the model parameters, and at least one model parameter corresponds to different parameter values in different parameter groups.

Abstract: Provided is a Rhodiola rosea nanoemulsion, comprising Rhodiola rosea extract, surfactant, cosurfactant and oil. The surfactant includes diethylene glycol monoethyl ester or polysorbate 80, the cosurfactant includes polysorbate 80, sorbitan oleate 80, or caprylocaproyl polyoxyl-8 glycerides (Labrasol®), and the oil includes Labrafac™ oil or soybean oil, and Rhodiola rosea extract coated in oil-in-water form. Also provided is a method for preparing the Rhodiola rosea nanoemulsion, so as to provide the Rhodiola rosea nanoemulsion suitable for drug delivery.

Abstract: A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.

Abstract: A conveyor belt lifting mechanism which includes an L-shaped arm, a telescopic arm, and a supporting shaft and an online operation and maintenance robot for a pipe belt conveyor are provided. One end of the L-shaped arm is rotatable, an axial direction of a rotating shaft is parallel to a conveying direction of a conveyor belt, the telescopic arm is slidably connected to the other end of the L-shaped arm, and the telescopic arm extends and retracts in an extension direction of the L-shaped arm. A universal rotary driving portion is connected to an end of the telescopic arm, the supporting shaft is fixed to an output end of the universal rotary driving portion, and two supporting rollers are arranged on the supporting shaft. An included angle between rotating shafts of the two supporting rollers is the same as that between two adjacent idlers in the pipe belt conveyor.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A composition contains: (A) a curable silicone composition including: (a1) a vinyldimethylsiloxy-terminated polydimethylpolysiloxane having a viscosity in a range of 30-400 milliPascal*seconds, (a2) a silicon-hydride functional crosslinker, and (a3) a hydrosilylation catalyst, where the molar ratio of silicon-hydride functionality from the crosslinker to vinyl functionality is in a range of 0.

Abstract: Immersion cooling systems, apparatus, and related methods for cooling electronic computing platforms and/or associated electronic components are disclosed herein. An example apparatus includes a first chamber including a first coolant disposed therein, the first coolant having a first boiling point. The example apparatus further includes a second chamber disposed in the first chamber, the second chamber to receive an electronic component therein. The second chamber includes a second coolant having a second boiling point different that the first boiling point. The second chamber is to separate the electronic component and the second coolant from the first coolant.

Abstract: Heat pipes and vapor chambers that are components of a DIMM cooling assembly are described.

Abstract: Various embodiments of the teachings herein include anomaly detection methods for a dynamic control system. An example method includes: using a g network to initialize a hidden state distribution of the system; receiving a measurement value of a sensor and a state value of a trigger at a current point of time; receiving a sampling point into an f network to perform a prediction to obtain a second sampling point; using an h network to map the second sampling point into a sensor measurement value space to perform a prediction to obtain a probability distribution of a measurement value of the sensor in the dynamic control system at the current point of time; and determining whether an anomaly exists in the dynamic control system by comparing the measurement value obtained from real-time monitoring and the probability distribution obtained from a prediction.

Abstract: An electrode holder comprises a bottom plate (10) and an electrode arm (100). The bottom plate (10) comprises at least one coupling structure for mounting a container or a sachet holder to it in a defined positional relation to the electrode arm. The electrode arm (100) comprises a clamp (55) to hold an electrode and is equipped to guide an electrode held by the clamp (70) to a container or sachet holder mounted to the at least one coupling structure.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A workpiece data processing method and apparatus are for accurately determining a relationship between production equipment processing parameters/ambient condition data and workpiece quality inspection results.

Abstract: Curable polyolefin composition comprising: (A) polyolefin having at least two aliphatic unsaturated bonds per molecule; (B) wax with melting point of 30 to 100° C.; (C) organopolysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule; and (D) catalytic amount of hydrosilylation reaction catalyst, wherein content of component (A) is 20 to 80 mass %, content of component (B) is 10 to 75 mass %, and content of component (C) is 1 to 20 mass %, each based on the total mass of components (A) to (D). The composition can be cured to form a cured product capable of storing and releasing thermal energy, and preventing the wax leaking/pumping out during heat cycling.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A thermal interface material is provided. The thermal interface material comprises: (A) a polyolefin having at least two hydroxy groups per molecule; (B) at least one thermally conductive filler; (C) a phase change material with a melting point of 25 to 150° C.; and (D) a coupling agent. A content of component (B) is at least 80 mass %, a content of component (C) is 0.01 to 1 mass %, and a content of component (D) is 0.1 to 1 mass %, each based on a total mass of the thermal interface material. The thermal interface material becomes softer as its temperature increases. Meanwhile, the thermal interface material generally does not exhibit pumping-out in electronic devices during power cycling.

Abstract: Various embodiments of the teachings herein include anomaly detection methods for a dynamic control system. An example method includes: using a g network to initialize a hidden state distribution of the system; receiving a measurement value of a sensor and a state value of a trigger at a current point of time; receiving a sampling point into an f network to perform a prediction to obtain a second sampling point; using an h network to map the second sampling point into a sensor measurement value space to perform a prediction to obtain a probability distribution of a measurement value of the sensor in the dynamic control system at the current point of time; and determining whether an anomaly exists in the dynamic control system by comparing the measurement value obtained from real-time monitoring and the probability distribution obtained from a prediction.