Abstract: A circuit board includes a plurality of signal contact pads each electrically contacting a contact point of one of a plurality of signal terminals and a non-conductive through hole extending through the circuit board in an interval area between a pair of adjacent signal contact pads of the plurality of signal contact pads.

Abstract: A method for fabricating a flexible electronic device, including the steps of: providing channels on a rigid substrate; adhering a flexible substrate to the rigid substrate with an adhesive; fabricating an electronic device on the flexible substrate; injecting a chemical substance into the channels; and reacting the chemical substance with the adhesive and peeling the flexible substrate from the rigid substrate. The rigid substrate comprises a first surface, a second surface opposite the first surface, and a side wall extending between the first surface and the second surface. The channels are provided on the first surface of the rigid substrate. The channels are in communication with an injection port, the injection port is located on the side wall of the rigid substrate, and a portion of the side wall is located between the injection port and the first surface.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A method and an apparatus for Bluetooth connection are disclosed. A first Bluetooth connection can be established between a first node of multiple data receiving nodes and a data source, the multiple data receiving nodes can share a data packet transmitted by the data source via the first Bluetooth connection, and a second node can be selected according to a preset rule from among the multiple data receiving nodes to feed back a response signal to the data source. In a method and an apparatus, the multiple data receiving nodes can be regarded as a whole, which share a data packet transmitted from the data source and jointly maintain the first Bluetooth connection, and only one of the multiple data receiving nodes is selected to feed back a response signal. Conforming to Bluetooth communication protocols, a method and an apparatus can meet the demanding requirements on hardware resources of a Bluetooth connection among a data source and multiple data receiving nodes.

Abstract: The disclosure is directed to, in part, to BCL-2 inhibitors, pharmaceutical compositions comprising the same, as well as methods of their use and preparation.

Abstract: A shower head fixture is provided, which relates generally to bath installations and includes a fixing assembly and a shower assembly. The fixing assembly includes a global head seat and a fixing holder, wherein the global head seat is movably provided on the fixing holder through a global head connection mechanism. The global head seat has an embedded portion; the shower assembly has a clasp portion which is fastened to the embedded portion. The shower head fixture can not only be quickly fixed and detached, but be adjusted up and down according to the required height of users.

Abstract: The present invention relates to a method for purifying polyunsaturated fatty acid using a continuous reactor, and the method comprises: (a) complexing step, (b) cleaning step, (c) extracting step, and (d) concentrating and drying step. The method of the present invention reacts a polyunsaturated fatty acid and a silver salt aqueous solution in a continuous reactor to form a complex of the polyunsaturated fatty acid and silver, and then cleans the complex with a first organic solvent to improve the purity of the complex; afterwards, a second organic solvent is used to extract the purified polyunsaturated fatty acid. The method of the present invention can continuously produce polyunsaturated fatty acids with high yield and high purity.

Abstract: Embodiments of the present disclosure provide an electronic device and preparation method thereof. The method of preparing the electronic device includes: providing a rigid substrate; arranging an electronic device to be peeled on the rigid substrate; and removing the rigid substrate to obtain the electronic device, thus realizing the mass production of the electronic device on the basis of the existing mature preparing technology of display panels, and thereby improving the production efficiency.

Abstract: A communication method, a communication device, and a readable storage medium, wherein the communication method includes: establishing a communication connection with a data source device; establishing a second wired connection with at least one other device; and exchanging identification information with the at least one other device through the second wired connection, thereby the at least one other device receiving communication data sent from the data source device according to the received identification information. With the above method, multi-device communication is performed quickly and reliably.

Abstract: The disclosure is directed to compounds of Formula I Pharmaceutical compositions comprising compounds of Formula I as well as methods of their use and preparation, are also described.

Abstract: A power system energy management system with dynamic state estimation (DSE) is disclosed wherein system dynamic states are estimated using SCADA measurements, PMU measurements, signals of controllers, digital recorders, protection devices, and smart electronic devices. The DSE is solved first by Unscented Kalman Filter, and if the Unscented Kalman Filter is failed, weighted lease square is used to solve the DSE. If weighted lease square is failed, integration method is used to calculate the dynamic states. In another aspect, Unscented Kalman Filter, weighted lease square, and integration calculation are applied to solve the DSE by nodal parallel computing for each generation system.

Abstract: A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.

Abstract: Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Here we disclose a metal-based heterostructure platform to produce these Majorana zero modes which utilizes the surface states of certain metals in combination with a ferromagnetic insulator and a superconductor. This platform has the advantage of having a robust energy scale and the possibility of realizing complex circuit designs using lithographic methods. The Majorana zero modes are interrogated using planar tunnel junctions and electrostatic gates to selectively tunnel into designated pairs of Majorana zero modes. We give example of qubit designs and circuits that are particularly suitable for the metal-based heterostructures.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: Provided are a composition, a cured polymer material formed from said composition, a method for forming a thermally conductive material on an article and an article having a thermally conductive material. Said thermally conductive material can be formed on an electronic device, and can be peeled off from said electronic device.

Abstract: A shower head fixture is provided, which relates generally to bath installations and includes a fixing assembly and a shower assembly. The fixing assembly includes a global head seat and a fixing holder, wherein the global head seat is movably provided on the fixing holder through a global head connection mechanism. The global head seat has an embedded portion; the shower assembly has a clasp portion which is fastened to the embedded portion. The shower head fixture can not only be quickly fixed and detached, but be adjusted up and down according to the required height of users.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: receiving a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type; introducing an agent onto the first epitaxy region and the second epitaxy region, wherein the agent is selectively deposited to the second epitaxy region; selectively depositing a first metal layer on the first epitaxy region; and depositing a second metal layer on the first epitaxy region and the second epitaxy region. A semiconductor structure according to the method is also provided.

Abstract: The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.

Abstract: The present invention discloses a drain plug linkage arrangement including a pull rod assembly, an operating rod, a drain plug, and a drain pipe, wherein the drain plug is movably mounted in the drain pipe. The pull rod assembly includes a pull rod and a connecting rod, wherein the pull rod is connected to the connecting rod via a button. A first end of the operating rod is inserted into the drain pipe from a sidewall of the drain pipe and is connected to the drain plug. The operating rod is connected to the connecting rod of the pull rod assembly. Assembly and disassembly between the pull rod and the connecting rod disclosed in the present invention are very convenient.