Abstract: A process includes immersing a device in a cooling fluid, the cooling fluid comprising an alkyl modified silicone oil having the following average chemical structure (I) : (CH 3) 3SiO- [ (CH 3) 2) SiO] m- [R (CH 3) SiO] n-Si (CH 3) 3 (I) where: R in each occurrence is an alkyl or substituted alkyl having 6 or more and at the same time 17 or fewer carbon atoms; subscript m has a value of one or higher and at the same time less than 22, subscript n has a value of one or higher, and the sum of m+n is greater than 5 and at the same time less than 50.

Abstract: A composition contains: (a) curable silicone composition including: (i) a vinyldimethylsiloxy-terminated polydimethylpolysiloxane with a viscosity of 30 to 400 mPa*s; (ii) a SiH functional crosslinker; and (iii) a hydrosilylation catalyst; where the molar ratio of crosslinker SiH functionality to vinyl functionality is 0.5:1 to 1:1; (b) alkyl trialkoxysilane and/or a mono-trialkoxysiloxy terminated dimethylpolysiloxane treating agent; (c) filler mix containing: (i) 40 wt % or more of spherical and irregular shaped AlN particles, both having an average size of 30 micrometers or more, the spherical AlN fillers are 40-60 wt % of the weight of the AlN fillers; (ii) 25-35 wt % spherical Al2O3 particles with an average size of 1-5 micrometers; (iii) 10-15 wt % of additional thermally conductive filler with a 0.1-0.

Abstract: A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.

Abstract: Provided is a thermal interface material containing a divinyl polydimethylsiloxane, a chain extender, a crosslinker, 80 volume-percent or more thermally conductive filler, treating agent composition, platinum hydrosilylation catalyst, and up to 0.2 weight-percent hydrosilylation inhibitor; where the wherein weight-percent values are relative to thermal interface material composition weight, volume-percent values are relative to thermal interface material composition volume, the molar ratio of silyl hydride groups to vinyl groups in the thermal interface material composition is 0.4 or more and at the same time is 1.0 or less, and the molar ratio of silyl hydride functionality from the chain extender to silyl hydride functionality from the crosslinker is 13 or more and at the same time 70 or less.

Abstract: A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.

Abstract: A composition contains an organopolysiloxane having the average chemical structure (I): [R?R2SiO—(R2SiO)m]3—Si—[OSiR2]n—Y—Si(OR)3??(I) where: R is independently in each occurrence selected from alkyl, aryl, substituted alkyl and substituted alkyl groups having from one to 8 carbon atoms; R? is independently in each occurrence selected from R and terminally unsaturated alkylene groups having from 2 to 6 carbon atoms; Y is selected from a group consisting of: X, and X—(R2SiO)pSiR2—X; where p has an average value in a range of one to 3; and X is independently in each occurrence selected from alkylene and substituted alkylene groups having from one to 6 carbon atoms; and the average values for subscripts m and n are each greater than zero and independently selected so that the average value for the sum of all of the average m values and the average n value is in a range of 30-200.

Abstract: The disclosure is directed to, in part, to BCL-2 inhibitors, pharmaceutical compositions comprising the same, as well as methods of their use and preparation.

Abstract: A composition contains an organopolysiloxane having the average chemical structure (I): [R?R2SiO—(R2SiO)m]3—Si—[OSiR2]n—Y—Si(OR)3??(I) where: R is independently in each occurrence selected from alkyl, aryl, substituted alkyl and substituted alkyl groups having from one to 8 carbon atoms; R? is independently in each occurrence selected from R and terminally unsaturated alkylene groups having from 2 to 6 carbon atoms; Y is selected from a group consisting of: X, and X—(R2SiO)pSiR2—X; where p has an average value in a range of one to 3; and X is independently in each occurrence selected from alkylene and substituted alkylene groups having from one to 6 carbon atoms; and the average values for subscripts m and n are each greater than zero and independently selected so that the average value for the sum of all of the average m values and the average n value is in a range of 30-200.

Abstract: A communication method, a communication device, and a readable storage medium, wherein the communication method includes: establishing a communication connection with a data source device; establishing a second wired connection with at least one other device; and exchanging identification information with the at least one other device through the second wired connection, thereby the at least one other device receiving communication data sent from the data source device according to the received identification information. With the above method, multi-device communication is performed quickly and reliably.

Abstract: A shower bar system for liquid soap supply comprises a soap dispenser assembly, a fixed base, a slide bar which is connected between the two, and an accessory which is coupled to the slide bar. The soap dispenser assembly includes a soap dispensing mechanism and two pivot mechanisms which are disposed respectively at the left side and the right side of the soap dispensing mechanism. Each of the pivot mechanisms is rotatably coupled to a rotary unit. An inner end of each of the rotary units has a connecting opening communicating with the soap dispensing mechanism. A peripheral surface of each of the rotary units is detachably coupled to a soap bottle. The liquid soap flown from each soap bottle to the soap dispenser assembly can be pressed out through the soap dispensing mechanism.

Abstract: The disclosure is directed to compounds of Formula I Pharmaceutical compositions comprising compounds of Formula I as well as methods of their use and preparation, are also described.

Abstract: An industrial device matching method and apparatus are used for acquiring a corresponding relationship between industrial devices in different industrial data sources to provide basis for industrial data analysis. The method, in an embodiment, includes collecting data of at least two industrial data sources; determining a first relationship between various industrial devices in each industrial data source, and determining a first relationship topology between the industrial devices in the industrial data source; and comparing the first relationship topologies corresponding to various industrial data sources, to determine a first corresponding relationship between industrial devices in industrial data sources, the first corresponding relationship enabling the first relationship topologies corresponding to at least two industrial data sources to be similar.

Abstract: Various embodiments of the teachings herein include methods, apparatuses, and computer-readable storage media for sensor measurements processing. An example method 100 includes: getting (S101) measurements by a group of sensors; estimating (S102) initial true states of the physical processes; and repeating the following until convergence: calculating (S103) reliability scores of the group of sensors such that a more reliable sensor should be more likely to provide measurements which are closer to real state of the physical process monitored by the sensor; and estimating (S104), based on the calculated reliability scores, true states of the physical processes, such that the real state of a physical process should be closer to measurements by a more reliable sensor.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A method and an apparatus for Bluetooth connection are disclosed. A first Bluetooth connection can be established between a first node of multiple data receiving nodes and a data source, the multiple data receiving nodes can share a data packet transmitted by the data source via the first Bluetooth connection, and a second node can be selected according to a preset rule from among the multiple data receiving nodes to feed back a response signal to the data source. In a method and an apparatus, the multiple data receiving nodes can be regarded as a whole, which share a data packet transmitted from the data source and jointly maintain the first Bluetooth connection, and only one of the multiple data receiving nodes is selected to feed back a response signal. Conforming to Bluetooth communication protocols, a method and an apparatus can meet the demanding requirements on hardware resources of a Bluetooth connection among a data source and multiple data receiving nodes.

Abstract: A method for forming thermally conductive composition on electronic components comprises three steps, (I) preparing a silicone composition comprising (A) a polyorganosiloxane, (B) a thermally conductive filler and (C) a catalyst, (II) applying the silicone composition on an electronic component of electronic devices, the electronic component generates heat when the electronic devices are working and (III) curing the silicone composition by heat generated by the electronic component.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A composition contains: (a) a polyorganosiloxane component comprising one or a combination of more than one poly-organosiloxane; (b) a filler treating agent comprising alkyltrialkoxysilane and trialkoxysiloxy-terminated diorganopolysiloxane; (c) 90-98 weight-percent of a combination of thermally conductive fillers comprising: (i) 25-40 weight-percent of thermally conductive filler particles having an average particle size of 70-150 micrometers and selected from one or a combination of aluminum oxide and aluminum nitride particles; (ii) 15-30 weight-percent thermally conductive filler particles having an average particle size in a range of 30-45 micrometers selected from one or a combination of aluminum oxide and aluminum nitride particles; (iii) 25-32 weight-percent aluminum oxide particles having an average particle size in a range of 1-5 micrometers; and (iv) 10-15 weight-percent thermally conductive filler particles having an average particle size in a range of 0.1 to 0.

Abstract: A workpiece data processing method and apparatus are for accurately determining a relationship between production equipment processing parameters/ambient condition data and workpiece quality inspection results.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.