Abstract: Methods and systems for techniques for determining control information in wireless networks are disclosed. In an implementation, a method of wireless communication includes receiving, by a wireless device, a first configuration of multiple traffic channels on multiple cells scheduled by a downlink control information (DCI) and a second configuration of multiple traffic channels on one cell scheduled by the DCI, and receiving the multiple traffic channels scheduled by the DCI.

Abstract: Methods and systems for techniques for determining control message formats in wireless networks are disclosed. In an implementation, a method of wireless communication includes determining, by a wireless device, a size budget of a control information in a case that the control information includes multi-cell scheduling control information, and monitoring a plurality of control channels carrying the control information within the size budget.

Abstract: An apparatus of salt cavern gas storage without cushion gas includes: a salt cavern; sediments; a drainage assembly; a gas injection and production pipe; a debrining string, one end of which is connected to the drainage assembly, and the other end of which protrudes from the ground to be connected to a water source assembly; a communicating assembly, which is used to make the gas injection and production pipe be in communication with the debrining string on the ground. A closed loop is formed by making the gas injection and production pipe and the debrining string be in communication with each other on the ground through the communicating assembly, thus the non-cushion gas injection-production operation of sediment particles in the salt cavern is realized.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: Example implementations include determining, by a network for a cell, a plurality of frequency resources and a plurality of frequency resource groups. Each of the plurality of frequency resource groups comprises one or more of the plurality of frequency resources. Each of the plurality of frequency resources is identified by at least one of a first frequency resource index and a second frequency resource index. The first frequency resource index identifies each of the plurality of frequency resources within the cell. The second frequency resource index identifies each of the plurality of frequency resources within one of the plurality of frequency resource groups. The network and the wireless communication device communicate using an active frequency resource group of the plurality of frequency resource groups.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present disclosure relates to an AC/DC closed-loop current sensor, including a magnetism gathering iron core, a TMR chip, a signal processing circuit, a signal generator, and a feedback coil. The TMR chip is arranged at an air gap of the magnetism gathering iron core and connected to the signal processing circuit. The signal processing circuit is connected to the signal generator. The feedback coil is wound around the magnetism gathering iron core and connected to the signal generator. The signal processing circuit is configured to select from the induced signal of the TMR chip and make an amplification to obtain a current signal component and send the current signal component to the signal generator. The signal generator is configured to adjust a current output to the feedback coil based on the current signal component, and output a measurement result of the selected current signal component.

Abstract: The present disclosure relates to a JAK inhibitor upadacitinib intermediate and a preparation method therefor, and to a preparation method for a JAK inhibitor upadacitinib. The upadacitinib intermediate of the present application is as shown in Formula (II) or Formula (III), wherein, R is a protective group of nitrogen atoms, and R1 is an open-chain or cyclic amine group. Compared with the prior art, the method for the synthesis of upadacitinib of the present application, significantly reduces cost, is environmentally-friendly. And the quality of the final product is well controlled.

Abstract: A display panel and a display device are provided. The display panel includes a display area and at least two non-display areas arranged adjacently along a first direction. The display area at least partially surrounds the non-display areas. Each non-display area includes at least one light-transmitting area and a wiring area, and the wiring area at least partially surrounds the at least one light-transmitting area. The display area includes pixel circuits and driving signal lines electrically connected with the pixel circuits. A driving signal line includes a first segment in the display area, a first connection line located in the wiring area, and a second segment located between the at least two non-display areas that are arranged adjacently. The first segment is connected to the second segment through the first connection line and the first segment is at least located at a side of the at least two non-display areas that are arranged adjacently.

Abstract: Embodiments of the application provide a display panel and display device. The display panel has a display area and a non-display area and includes a touch-control component, including multiple first electrode blocks distributed in sequence along a first direction and multiple second electrode blocks distributed in sequence along a second direction, the first electrode blocks and second electrode blocks being positioned in the display area; and a dummy component including dummy electrode blocks positioned in the display area and dummy traces positioned in the non-display area, each dummy electrode block being positioned between two adjacent first electrode blocks and a second electrode block adjacent to the two adjacent first electrode blocks, wherein there is a first distance S between two adjacent dummy electrode blocks, and a distance from an end of at least one dummy trace to a dummy electrode block is greater than or equal to S/3.

Abstract: The present disclosure is directed to UL cell and SCell activation, including sending, by a base station to a wireless communication device, a Secondary Cell (SCell) activation command triggering at least SCell activation and measurement signal for at least one SCell, and receiving, by the base station from the wireless communication device, the measurement signal in response to the SCell activation command, wherein the wireless communication device activates the at least one SCell in response to the SCell activation command.

Abstract: This disclosure relates to systems for wellbore drilling and methods for preparing wellbore drilling fluid. The system can include a drilling fluid tank that holds wellbore drilling fluid for introduction into a wellbore, an additive distribution component fluidly coupled to the drilling fluid tank that holds a first additive, and a computing device communicatively coupled to the additive distribution component. The methods can include a computing device performing at least the following: receiving drilling parameters that identify wellbore drilling conditions of a wellbore drilling system, calculating a thermochemical sulfate reduction (TSR) proxy value of the wellbore. In response to determining that a predicted hydrogen sulfide concentration meets a predetermined threshold, the computing device can determine a first quantity of a first additive to be added to the wellbore drilling fluid and combine the first quantity of the first additive with the wellbore drilling fluid.

Abstract: A semiconductor device includes a semiconductor substrate, a first gate structure over the substrate, a second gate structure over the substrate, first gate spacers, second gate spacers, first and second metal layers spanning over the first and second gate structures, first and second contact plugs extending through the first and second metal layers, respectively. The first gate structure includes a first gate dielectric, and a first work function metal layer over the first gate dielectric. The second gate structure is wider than the first gate structure, wherein the second gate structure includes a second gate dielectric, a second work function metal layer over the second gate dielectric, and a filling conductor over the second work function metal layer. The first contact plug is in contact with the first work function metal layer, and the second contact plug is in contact with the filling conductor.

Abstract: A thermal interface material is provided. The thermal interface material comprises: (A) a polyolefin having at least two hydroxy groups per molecule; (B) at least one thermally conductive filler; (C) a phase change material with a melting point of 25 to 150° C.; and (D) a coupling agent. A content of component (B) is at least 80 mass %, a content of component (C) is 0.01 to 1 mass %, and a content of component (D) is 0.1 to 1 mass %, each based on a total mass of the thermal interface material. The thermal interface material becomes softer as its temperature increases. Meanwhile, the thermal interface material generally does not exhibit pumping-out in electronic devices during power cycling.

Abstract: Various embodiments of the teachings herein include anomaly detection methods for a dynamic control system. An example method includes: using a g network to initialize a hidden state distribution of the system; receiving a measurement value of a sensor and a state value of a trigger at a current point of time; receiving a sampling point into an f network to perform a prediction to obtain a second sampling point; using an h network to map the second sampling point into a sensor measurement value space to perform a prediction to obtain a probability distribution of a measurement value of the sensor in the dynamic control system at the current point of time; and determining whether an anomaly exists in the dynamic control system by comparing the measurement value obtained from real-time monitoring and the probability distribution obtained from a prediction.

Abstract: Techniques for heat sinks and cold plates for compute systems are disclosed. In one embodiment, a heat sink includes two sub-heat sinks that are mechanically connected but thermally isolated. The two sub-heat sinks can independently cool different dies on the same integrated circuit component. In another embodiment, a system includes an integrated circuit component that is cooled by a first water block and a second water block. The first water block forms a loop with a gap in it, and the second water block has a pedestal that extends through the gap in the first water block to contact the integrated circuit component. The first water block and the second water block can independently cool different dies on the same integrated circuit component.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.