Abstract: Methods for packaging microfeature devices on and/or in microfeature workpieces at the wafer level and microfeature devices that are formed using such methods are disclosed herein. In one embodiment, a method comprises providing a workpiece including a substrate having a plurality of microelectronic dies on and/or in the substrate. The individual dies include integrated circuitry and pads electrically coupled to the integrated circuitry. The method then includes depositing an underfill layer onto a front side of the substrate. The method also includes selectively forming apertures in the underfill layer to expose the pads at the front side of the substrate. The method further includes depositing a conductive material into the apertures and in electrical contact with the corresponding pads. In one aspect of this embodiment, the underfill layer is a photoimageable material.

Abstract: Microelectronic devices, microfeature workpieces, and methods of forming and stacking the microelectronic devices and the microfeature workpieces. In one embodiment, a microfeature workpiece includes a plurality of first microelectronic dies. The individual first dies have an integrated circuit, a plurality of pads electrically coupled to the integrated circuit, and a plurality of first conductive mating structures at least proximate to corresponding pads. The first conductive mating structures project away from the first dies and are configured to interconnect with corresponding complementary second conductive mating structures on second dies which are to be mounted to corresponding first dies.

Abstract: An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one embodiment, a wafer edge ring is formed using a stereolithography (STL) process. In another embodiment, a wafer edge ring is formed with a spin coating apparatus provided with a wafer edge exposure (WEE) system. In further embodiments, a wafer edge ring is used to contain a liquid over a wafer active surface during a processing operation. In one embodiment, the wafer edge ring contains a liquid having a higher refractive index than air while exposing a photoresist on the wafer by immersion lithography. In another embodiment, the wafer edge ring contains a curable liquid material while forming a chip scale package (CSP) sealing layer on the wafer.

Abstract: An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one embodiment, a wafer edge ring is formed using a stereolithography (STL) process. In another embodiment, a wafer edge ring is formed with a spin coating apparatus provided with a wafer edge exposure (WEE) system. In further embodiments, a wafer edge ring is used to contain a liquid over a wafer active surface during a processing operation. In one embodiment, the wafer edge ring contains a liquid having a higher refractive index than air while exposing a photoresist on the wafer by immersion lithography. In another embodiment, the wafer edge ring contains a curable liquid material while forming a chip scale package (CSP) sealing layer on the wafer.

Abstract: Microelectronic devices, methods for packaging microelectronic devices, and methods for forming vias and conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes forming a bond-pad on a die having an integrated circuit, the bond-pad being electrically coupled to the integrated circuit. A conductive line is then formed on the die, the conductive line having a first end portion attached to the bond-pad and a second end portion spaced apart from the bond-pad. The method can further include forming a via or passage through the die, the bond-pad, and the first end portion of the conductive line, and depositing an electrically conductive material in at least a portion of the passage to form a conductive interconnect extending at least generally through the microelectronic device.

Abstract: The present invention relates generally to electronic commerce, and more particularly, to a method and system for performing electronic commerce over the Internet.

Abstract: Techniques for memory management or analysis with conservative garbage collectors is provided. The native stack is analyzed during runtime to identify within frames references to objects in the heap space. An amount of memory is calculated that represents the memory implicated by the reference. A log can be generated that conveys the frame, location of the reference in the frame and amount of memory implicated by the reference.

Abstract: Techniques are provided for accessing an instance of a recreatable object in a shorter-duration memory based on a reference located in a longer-duration memory, where the shorter-duration memory is associated with a call. One technique involves (1) locating, within the shorter-duration memory, a context structure associated with the call; (2) locating an XREF pointers array based on data cached within the context structure; (3) determining whether the XREF pointers array includes a pointer associated with the reference; and (4) if the XREF pointers array includes a pointer associated with the reference, then following the pointer to locate the instance within the shorter-duration memory.

Abstract: A method and software for performing data migration is described in which a common data migration driver routine is provided to handle various and disparate kinds of migration operations in a conceptually unified manner. Differences between the migration operations are handled by variations in how the state of the data migration driver routine is initialized, including pointers to low-level routines. Furthermore, a table of actions can be used to direct the basic operation of object copying, external reference created, and object interning.

Abstract: A memory model for a run-time environment is disclosed that includes a process-specific area of memory where objects in call-specific area of memory and session-specific area of memory can be migrated to at the end of a database call. User-specific objects can be then migrated to the session-specific area of memory. In one embodiment, the process-specific area of memory can be saved in a disk file and used to hot start another instance of an application server.

Abstract: Microlenses for directing radiation toward a sensor of an imaging device include a plurality of mutually adhered layers of cured optically transmissive material. Systems include at least one microprocessor, a substrate including an array of microlenses formed thereon in electrical communication with the at least one microprocessor. At least one microlens in the array includes a plurality of mutually adhered layers of cured optically transmissive material.

Abstract: A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an unheated portion of the organometallic layer. In other methods, a flowable, uncured conductive material may be deposited on a surface of the substrate, the flowable, uncured conductive material may be selectively cured over at least a portion of the surface of the substrate, and a portion of the cured conductive material may be removed. A conductive via is formed by forming a hole at least partially through a thickness of a substrate, depositing an organometallic material within at least a portion of the hole, and selectively heating at least a portion of the organometallic material.

Abstract: A microlens for use in an imaging device may be fabricated by disposing a flowable, uncured optically transmissive material in at least one layer onto a surface of a substrate, selectively curing at least a portion of the flowable, uncured optically transmissive material, and removing the flowable, uncured optically transmissive material from the surface of the substrate.

Abstract: Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging device further includes a cover over the image sensor and a plurality of interconnects in and/or on the cover that are electrically coupled to corresponding bond-pads of the die. The interconnects provide external electrical contacts for the bond-pads of the die. The interconnects can extend through the cover or along a surface of the cover.

Abstract: A method of packaging at least a portion of a semiconductor die or dice is disclosed. Uncured material may be disposed proximate at least the periphery of at least one semiconductor die and at least partially cured substantially as a whole. Method of forming conductive elements such as traces, vias, and bond pads are also disclosed. More specifically, forming at least one organometallic layer to a substrate surface and selectively heating at least a portion thereof is disclosed. Also, forming a layer of conductive photopolymer over at least a portion of a surface of a substrate and removing at least a portion thereof is disclosed. A microlens having a plurality of mutually adhered layers of cured, optically transmissive material, methods of forming same, and systems so equipped are disclosed.

Abstract: Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

Abstract: A method for forming at least one conductive element is disclosed. Particularly, a semiconductor substrate, including a plurality of semiconductor dice thereon, may be provided and a dielectric layer may be formed thereover. At least one depression may be laser ablated in the dielectric layer and an electrically conductive material may be deposited thereinto. Also, a method for assembling a semiconductor die having a plurality of bond pads and a dielectric layer formed thereover to a carrier substrate having a plurality of terminal pads is disclosed. At least one depression may be laser ablated into the dielectric layer and a conductive material may be deposited thereinto for electrical communication between the semiconductor die and the carrier substrate. The semiconductor die may be affixed to the carrier substrate and at least one of the dielectric layer and the conductive material may remain substantially solid during affixation therebetween. The methods may be implemented at the wafer level.

Abstract: Methods for packaging microfeature devices on and/or in microfeature workpieces at the wafer level and microfeature devices that are formed using such methods are disclosed herein. In one embodiment, a method comprises providing a workpiece including a substrate having a plurality of microelectronic dies on and/or in the substrate. The individual dies include integrated circuitry and pads electrically coupled to the integrated circuitry. The method then includes depositing an underfill layer onto a front side of the substrate. The method also includes selectively forming apertures in the underfill layer to expose the pads at the front side of the substrate. The method further includes depositing a conductive material into the apertures and in electrical contact with the corresponding pads. In one aspect of this embodiment, the underfill layer is a photoimageable material.

Abstract: Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

Abstract: Materials for use in programmed material consolidation processes, such as stereolithography, include a selectively consolidatable material and a filler. The filler may be included to optimize one or more physical properties of the material. The material is both selectively consolidatable and includes the desired physical property. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.