Abstract: A method for seismic imaging of a subsurface using a full waveform inversion, FWI, includes the steps of obtaining an initial P-velocity model that describes how a seismic wave propagates through the subsurface, generating an S-velocity model based on the initial P-velocity model, generating an elastic synthetic dataset p based on the initial P-velocity model and the S-velocity model, receiving a recorded seismic dataset d of the subsurface, updating the P-velocity model based on a comparison between the synthetic dataset p and the recorded seismic dataset d, updating a reflectivity at various locations in the subsurface based on the updated P-velocity model, and generating an image of the subsurface based on the reflectivity.

Abstract: Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region, a molding material around the integrated circuit die mounting region, and an interconnect structure over the molding material and the integrated circuit die mounting region. The interconnect structure has contact pads, and connectors are coupled to the contact pads. Two or more of the connectors have an alignment feature formed thereon.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: A motor driver improving resonance noise caused by a motor is provided. The motor driver sets one or more duty cycle threshold ranges. When a duty cycle of each waveform of a duty cycle input signal does not fall within the one or more duty cycle threshold ranges, the motor driver directly drives the motor according to the duty cycle input signal. When the duty cycle of any waveforms of the duty cycle input signal falls within the one or more duty cycle threshold ranges, the motor driver adjusts the duty cycles of some waveforms of the duty cycle input signal within specified time such that the duty cycles of at least two of the plurality of waveforms of the duty cycle input signal are different from each other, and drives the motor according to the adjusted duty cycle input signal.

Abstract: A method for fabricating a semiconductor device includes the steps of defining a scribe line on a front side of a wafer, forming an inter-metal dielectric (IMD) layer on the wafer, forming an alternating stack on the IMD layer, removing the alternating stack to form a trench, forming a passivation layer extending from the alternating stack to the trench, and then performing a dicing process along the scribe line to dice the passivation layer and the wafer.

Abstract: A method of manufacturing a magnetoresistive random access memory, including forming a conductive plug in a substrate, forming a bottom electrode material layer, a magnetic tunnel junction material layer and a top electrode material layer on the substrate and the conductive plug, and performing an anisotropic etch process to pattern the bottom electrode material layer, the magnetic tunnel junction material layer and the top electrode material layer, thereby forming a magnetic memory cell on the conductive plug, wherein the anisotropic etch process overetches the conductive plug and the substrate so that a notched portion is formed on one side of an upper edge of the conductive plug, and depressed regions are formed on the substrate at two sides of the magnetic memory cell.

Abstract: A system includes a station to support a workpiece having one or more welds and/or surface features, and first and second vision sensing assemblies. The first assembly is configured to illuminate the workpiece and generate an image of the one or more welds and/or surface features. The first assembly includes a first light source configured to emit light having a first wavelength and a first sensor configured to detect the light having the first wavelength reflected by the workpiece. The second assembly is configured to illuminate the workpiece and generate an image of the one or more welds and/or surface features. The second assembly includes a second light source configured to emit light having a second wavelength and a second sensor configured to detect the light having the second wavelength reflected by the workpiece. Other example systems and methods are also disclosed.

Abstract: A system for inspecting and revising welds. The system includes: a weld inspection sensor configured to inspect weld parameters of the welds; an inspection controller configured to identify one or more of the welds as an imperfect weld based on the weld parameters; a system controller configured to designate the imperfect weld for revision based on the weld parameters of, and relative locations of, the welds that are proximate to the imperfect weld designated for revision; a welding robot controller configured to operate a welding robot to perform a revision weld at the imperfect weld; and a weld verification sensor configured identify a revision location of the revision weld. The system controller is configured to verify the revision weld based on the revision location identified by the weld verification sensor.

Abstract: A rechargeable energy storage system includes a housing including a tray and a sidewall structure. A plurality of beam assemblies extend in parallel across the housing, the plurality of beam assemblies each include a bottom cap having a base plate and pair of parallel ribs extending from the base plate. A coolant passage plate is sandwiched between a pair of undulating plates with a first end disposed between the pair of parallel ribs of the bottom cap. The coolant passage plate is connected to a coolant source. A plurality of battery cells are disposed in the housing and in contact with the undulating plates of adjacent beam assemblies.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a cap layer on sidewalls of the first MTJ and the second MTJ, a dielectric layer around and directly contacting the cap layer, a first metal interconnection on the first MTJ, the second MTJ, and the dielectric layer, and an inter-metal dielectric (IMD) layer around the dielectric layer and the first metal interconnection.

Abstract: The present disclosure relates to a chair, including: a base; a seat frame rotatably mounted on the base; a footrest bracket and a backrest bracket articulated with the seat frame, where the footrest bracket and the backrest bracket are staggered from a rotation axis of the seat frame relative to the base; a rod-linkage structure, including a first rod-linkage assembly connected between the base and the seat frame, and a second rod-linkage assembly connected between the seat frame and the footrest bracket; and a driving unit, used to drive the first rod-linkage assembly and the second rod-linkage assembly to operate, to link rotation of the seat frame and rotation of the footrest bracket.

Abstract: A voltage detection device includes: a reference voltage latch circuit, outputting one of a first set of reference voltages and a second sets of reference voltages lower than the first set of reference voltages, as a third set of reference voltages according to a selection signal, and being selectively to be reset or to continue outputting the one of the first and second sets of reference voltages as the third set of reference voltages according to a first detection signal; a first voltage detector, generating the first detection signal according to a fourth set of reference voltages lower than or equal to the first set of reference voltages and an input voltage; a second voltage detector, generating a second detection signal according to the third set of reference voltages and the input voltage; and a digital circuit, generating the selection signal according to the second detection signal.

Abstract: A method of fabricating a heterostructure includes forming a layered material structure such that the layered material structure has an edge, and growing epitaxially a nanostructure of layered material laterally from the edge of the layered material structure such that an inplane interface between the layered material structure and the nanostructure is defined. Growing the nanostructure is implemented at a growth temperature sufficiently near a decomposition temperature of the layered material such that a nucleation interface of the nanostructure has a single atomic configuration.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

Abstract: The present application relates to an antibody capable of specifically binding to c-Met or antigen-binding fragment thereof, and an immunoconjugate, a pharmaceutical composition and a multispecific molecule comprising the same. The present application further relates to the use of the antibody specifically binding to c-Met or an antigen-binding fragment thereof and the multispecific molecule. Compared with the control antibody, the bispecific antibody or defucosylated bispecific antibody of the present application can block HGF-dependent TKI resistance; block the proliferation and migration of tumor cells induced by HGF, induce ADCC effect, and inhibit tumor growth in vivo.

Abstract: The present invention relates to a high-speed protocol conversion device and a parallel processing unit for industrial heterogeneous networks, and belongs to the technical field of industrial Internet. The device comprises a queue transceiver unit, a protocol conversion unit, a parallel processing unit and an SDN management interface unit; uses a wireless module to receive and transmit data of an industrial wireless network; and uses a network card to receive and transmit data of an industrial wired network and data of an IPv6 backbone network.

Abstract: A semiconductor structure includes a bottom wafer having a bottom substrate and a bottom interconnect structure on the bottom substrate, and a top wafer having a top substrate with a front surface and a rear surface and a top interconnect structure disposed on the front surface of the top substrate. The top interconnect structure is directly bonded to the bottom interconnect structure of the bottom wafer. An oxide-nitride-oxide (ONO) dielectric layer covers the rear surface of the top substrate. A plurality of conductive vias is disposed on the rear surface and extending into the ONO dielectric layer and the top substrate.

Abstract: A sliding rail is adapted to be engaged with an engaging member, and includes a track and a limiting mechanism. The track includes a base wall, two side walls, and two pivoting slots. The limiting mechanism includes first and second operating members, a limiting member, and first and second connecting members. The first operating member is operable for driving the limiting member from a locked position, where the engaging member is contained in a limiting space between the limiting member and one of the side walls, to a first unlocked position, where the limiting member is rotated about the second connecting member to open the limiting space. The second operating member is operable for driving the limiting member from the locked position to a second unlocked position, where the limiting member is rotated about the first connecting member to open the limiting space.

Abstract: A beam for supporting a plurality of prismatic batteries in battery enclosure of an electric vehicle includes a base, having a lower elongate horizontal flange, and an upper elongate horizontal flange, narrower than the lower elongate horizontal flange, spaced above the lower elongate horizontal flange by a vertical web. A web member can be disposed on the upper elongate horizontal flange of the base, and includes first and second elongate exterior vertical wall members. At least two elongate inserts disposed between the vertical exterior wall members, and configured to at least in part form at least one longitudinally extending channel between them. The elongate inserts can be made of metal and the longitudinally extending channel provides a pathway for cooling fluid. A cap can engage the upper edges of the vertical wall members and enclose the metal inserts in the space between the first and second vertical wall members.

Abstract: A sliding rail adapted to be engaged with an engaging member, and includes a track and a limiting mechanism. The track includes a base wall having first and second ends, and two side walls. The limiting mechanism includes an operating member, a limiting member, first and second positioning members, and a connecting member. The limiting member has a limiting body, a pivoting portion, and two limiting portions. The operating member is formed with a linking slot that has a first linking slot end, a second linking slot end, and a linking slot tip. The limiting body has two pivoting slots. The operating member is operable to drive the limiting member to move among a locked position where the engaging member is contained in a limiting space, and first and second unlocked positions which opens the limiting space, allowing the engaging member to be released from the limiting space.