Abstract: A multifunctional unified structure thermal plate and system for supporting a plurality of battery cells included as part of a high voltage battery pack. The plate may include a bottom plate and a plurality of crossbeams configured for supporting the battery cells, with the bottom plate and the crossbeams together being from as a monolithic, one-piece structure.

Abstract: A battery cell including a stack and a first internal terminal. The stack includes: C cathode electrodes each including a cathode current collector, a cathode active layer arranged on the cathode current collector, and an external connector extending from the cathode current collector; A anode electrodes each including an anode current collector, an anode active layer arranged on the anode current collector, and an external connector extending from the anode current collector; and S separators, where C, A, and S are integers greater than one. Each one of the external connectors, of one of the C cathode electrodes and the A anode electrodes, includes a first tab and a second tab extending farther than the first tab, the second tabs are folded onto the first tabs, and the first internal terminal is laser welded onto the second tabs.

Abstract: A method of fabricating a heterostructure includes growing epitaxially, in a growth chamber, a first semiconductor layer of the heterostructure, the first semiconductor layer including a first III-nitride semiconductor material, the first semiconductor layer being supported by a substrate, after growing the first semiconductor layer, growing epitaxially, in the growth chamber, a second semiconductor layer of the heterostructure such that the second semiconductor layer is supported by the first semiconductor layer, the second semiconductor layer including a second III-nitride semiconductor material, and between growing the first semiconductor layer and growing the second semiconductor layer, controlling an extent to which a eutectic layer disposed on the first semiconductor layer is consumed to control a lattice polarity of the second semiconductor layer

Abstract: Disclosed herein are anti-GM-CSF antibodies capable of binding to human GM-CSF and blocking its biological activities. Also provided herein are pharmaceutical compositions comprising the anti-GM-CSF antibodies and therapeutic and diagnostic uses of such antibodies.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

Abstract: A battery casing includes a first portion including a first planar portion and a bottom portion and a second portion having a second planar portion, a first side portion, and a second side portion, the first portion and the second portion configured to be welded together at (i) a first butt joint extending along the first side portion to join the first side portion to the first planar portion and to the bottom portion at the first side portion, (ii) a second butt joint extending along the second planar portion to join the second planar portion to the bottom portion at the second planar portion, and (iii) a third butt joint extending along the second side portion to join the second side portion to the first planar portion and to the bottom portion at the second side portion.

Abstract: A weldment assembly includes a first component and a second component configured to be coupled to the first component. Additionally, the first component and the second component are coupled through a first linear stitch and a second linear stitch disposed parallel to the first linear stitch.

Abstract: The present invention relates to the technical field of maglev transportation, specifically revealing a method and apparatus for measuring magnetic field intensity in high-temperature superconducting maglev transportation systems.

Abstract: The present invention provides a Bletilla dedifferentiated cell extract by carbon dioxide supercritical extraction, which has triple cosmetic efficacies of whitening, anti-oxidation and anti-wrinkling, and the advantages of low skin irritation potential. The present invention further provides a method for whitening, anti-oxidation and anti-wrinkling by applying the extract by carbon dioxide supercritical extraction, and a cosmetic comprising the same so as to meet all the skin cosmetic needs of consumers in an all-round way.

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

Abstract: A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and filling the spaces between the memory stack structures, a first interconnecting structure through the second dielectric layer, wherein a top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures, a third dielectric layer on the second dielectric layer, and a plurality of second interconnecting structures through the third dielectric layer, the second dielectric layer and the insulating layer on the top surfaces of the memory stack structures to contact the top surfaces of the memory stack structures.

Abstract: An image capture system includes a light detection and ranging (LIDAR) device which captures images of an environment while rotating and a plurality of cameras, disposed separately from the LIDAR device, each including a rolling shutter sensor and each capturing images of the environment. The plurality of cameras include a first camera disposed to face in a first direction and a second camera disposed to face in a second direction. A time at which the first camera captures a first image is synchronized with a time at which the LIDAR device captures a second image when the LIDAR device rotates to face in the first direction, and a time at which the second camera captures a third image is synchronized with a time at which the LIDAR device captures a fourth image when the LIDAR device rotates to face in the second direction.

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

Abstract: An audio mixing method for network streaming includes the steps of establishing a network streaming connection between the first end and the second end, generating a text voiced audio signal based on a trigger signal by the first end, mixing a play signal and the text voiced audio signal into a play signal with the text voiced audio signal, in the state of the network streaming connection, transmitting the play signal with text voiced audio signal to the second end, and the play signal with text voiced audio signal is played by the second end.

Abstract: The present invention relates to a carbon nanotube-transition metal oxide composite and a method for making the composite. The composite comprises at least one carbon nanotube and a plurality of transition metal oxide nanoparticles. The plurality of transition metal oxide nanoparticles are chemically bonded to the at least one carbon nanotube through carbon-oxygen-metal (C—O-M) linkages, wherein the metal is a transition metal element. The method for making the composite comprising the following steps: step 1, providing at least one carbon nanotube obtained from a super-aligned carbon nanotube array; step 2, pre-oxidizing the at least one carbon nanotube; step 3, dispersing the at least one carbon nanotube in a solvent to form a first suspension; step 4, dispersing a material containing transition metal oxyacid radicals in the first suspension to form a second suspension; and step 5, removing the solvent from the second suspension and drying the second suspension.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.

Abstract: A circuit board with anti-corrosion properties, a method for manufacturing the circuit board, and an electronic device are provided. The circuit board includes a circuit substrate, a first protective layer, and a second protective layer. The circuit substrate includes a base layer and an outer wiring layer formed on the base layer. The circuit substrate further defines a via hole connected to the outer wiring layer. The first protective layer is formed on the outer wiring layer and an inner sidewall of the via hole, and is made of a white oil. The second protective layer is formed on the first protective layer.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

Abstract: A first node receives a first reference signal in a first RS resource; first operates a first signal on a first frequency band; a duplex mode of the first frequency band is a frequency division duplex; the first operating is to receive and the first signal is on a downlink working band, or the first operating is to transmit and the first signal is on an uplink working band; the first signal is spatially associated with the first RS resource; when the first operating is to receive, time-domain resources occupied by the first signal are not overlapping with a first time-domain resource pool; when the first operating is to transmit, time-domain resources occupied by the first signal are not overlapping with a second time-domain resource pool; time-domain resources occupied by the first time-domain resource pool are orthogonal to time-domain resources occupied by the second time-domain resource pool.