Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.

Abstract: A circuit board with anti-corrosion properties, a method for manufacturing the circuit board, and an electronic device are provided. The circuit board includes a circuit substrate, a first protective layer, and a second protective layer. The circuit substrate includes a base layer and an outer wiring layer formed on the base layer. The circuit substrate further defines a via hole connected to the outer wiring layer. The first protective layer is formed on the outer wiring layer and an inner sidewall of the via hole, and is made of a white oil. The second protective layer is formed on the first protective layer.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

Abstract: A first node receives a first reference signal in a first RS resource; first operates a first signal on a first frequency band; a duplex mode of the first frequency band is a frequency division duplex; the first operating is to receive and the first signal is on a downlink working band, or the first operating is to transmit and the first signal is on an uplink working band; the first signal is spatially associated with the first RS resource; when the first operating is to receive, time-domain resources occupied by the first signal are not overlapping with a first time-domain resource pool; when the first operating is to transmit, time-domain resources occupied by the first signal are not overlapping with a second time-domain resource pool; time-domain resources occupied by the first time-domain resource pool are orthogonal to time-domain resources occupied by the second time-domain resource pool.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.

Abstract: A method for manufacturing an enclosure includes designing a two dimensional (2D) blank corresponding to a three dimensional (3D) enclosure body; laying out N of the 2D blanks on a metal sheet, where N is an integer greater than one; separating the N 2D blanks from the metal sheet; at least one of bending, folding and/or flanging the N 2D blanks into the 3D enclosure body; and joining a plurality of sides of the 3D enclosure body.

Abstract: Provided is an efficient and energy-saving building slurry stirring device. The device includes a grouting assembly, which includes a base, a storage tank, a discharge pipe, a grouting pump and a control box. The storage tank is arranged at the top of the base, the discharge pipe is located at one side of the storage tank, the grouting pump is arranged on the discharge pipe, and the control box is fixed to the top of the base. When the fluidity of a grouting material in the storage tank is reduced due to solidification, the stirring assembly can stir the grouting material in the storage tank. Then, the stirring assembly stops stirring the grouting material to save energy. After the grouting is completed, an inner wall of the storage tank can be cleaned by the stirring assembly.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer, and patterning the second SOT layer and the passivation layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: The present disclosure describes a multi-function, integrated Super Beam assembly structure with integrated structural, cooling, and transverse elastic compliance functions; and Thermal Management Propagation (TMP) protection. The Super Beam assembly includes a pair of parallel face plates, coolant channel cover plates, and coolant channels that are defined by the face plate and the one or more coolant channel cover plates. The structural design of the cooling channels, and the corresponding air gaps formed in-between them, allows a transverse elastic compliance of the Super Beam assembly to be tuned to different amounts of elasticity. Top, bottom and/or end structural channels may be included. A pair of TMP suppression channels may be attached to the Super Beam assembly structure with an adhesive “thermal fuse” that preferentially melts and causes the pair of TMP suppression channels to detach from the Super Beam assembly during overheating in a TMP event.

Abstract: A semiconductor device with isolation structures of different dielectric constants and a method of fabricating the same are disclosed. The semiconductor device includes fin structures with first and second fin portions disposed on first and second device areas on a substrate and first and second pair of gate structures disposed on the first and second fin portions. The second pair of gate structures is electrically isolated from the first pair of gate structures. The semiconductor device further includes a first isolation structure interposed between the first pair of gate structures and a second isolation structure interposed between the second pair of gate structures. The first isolation structure includes a first nitride liner and a first oxide fill layer. The second isolation structure includes a second nitride liner and a second oxide fill layer. The second nitride layer is thicker than the first nitride layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a passivation layer around the MTJ, and a second SOT layer on the first SOT layer and the passivation layer. Preferably, a top surface of the passivation layer is lower than a top surface of the first SOT layer.

Abstract: Provided is a method for preparing 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid, comprising the following steps: a) mixing methylphosphonite diester, carboxylic acid and acryloyl cyanide, performing addition reaction, and performing distillation under reduced pressure to obtain a material solution of (3-cyano-3-carbonylpropyl)methylphosphonate; b) mixing the material solution of (3-cyano-3-carbonylpropyl)methylphosphonate obtained in step a) with water uniformity, cooling to 10° C.-40° C., then adding hydrochloric acid dropwise for acidification, and after the dropwise addition being completed, continuing stirring for 0.1 h-1 h, then performing hydrolysis reaction, and finally performing purification treatment to obtain 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid. In the provided preparation method, cyanation reaction is not required, which avoids the use of cyclic phosphonic anhydride that is high in cost and difficult to obtain and the highly toxic sodium cyanide.

Abstract: A method for preparing 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid, comprising the following steps: a) mixing 3-chloropropionyl chloride, a first solvent, trimethylsilyl cyanide and cyanide salt, performing a substitution reaction to obtain a material solution containing 4-chloro-2-oxobutyronitrile, then performing distillation under reduced pressure, and performing separation to obtain 4-chloro-2-oxobutyronitrile intermediate; b) subjecting the 4-chloro-2-oxobutyronitrile intermediate obtained in step a) and methyl phosphonite diester to Arbuzov reaction in a second solvent in the presence of cuprous iodide to obtain a material solution of (3-cyano-3-oxopropyl) methyl phosphinate, and performing purification to obtain crude (3-cyano-3-oxopropyl) methyl phosphinate; c) mixing the obtained crude (3-cyano-3-oxopropyl)methyl phosphinate with hydrochloric acid, performing hydrolysis reaction, and then performing purification treatment to obtain 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid.

Abstract: A battery pack includes a first header having a first conduit and a second header having a second conduit. The battery pack also includes an energy storage system having energy storage cells arranged between the first header and the second header. A coolant plate assembly is arranged between the first header and the second header and abuts the plurality of energy storage cells. The coolant plate assembly includes a coolant channel having a first end fluidically connected to the first conduit, a second end fluidically connected to the second conduit, and an intermediate portion defining a flow path. The coolant plate assembly also includes a first planar section having a first surface facing the energy storage cells and a second surface having protrusions extending into the coolant channel.

Abstract: A first node receives a first reference signal and a second reference signal, a time-frequency resource occupied by the first reference signal and a time-frequency resource occupied by the second reference signal being both associated with a target reference signal resource; and transmits CSI; a measurement of the first reference signal is used to generate the CSI, and the second reference signal is no later than a CSI reference resource for the CSI in time domain; whether a measurement of the second reference signal is used to generate the CSI depends on one of the following: power-related information of the first reference signal and the second reference signal; location-related information of the first node; spatial Rx parameters corresponding to the first reference signal and the second reference signal; or time-domain resources occupied by the first reference signal and the second reference signal.

Abstract: The present invention provides a method for preparing 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid, comprising the following steps: a) mixing acryloyl chloride, a first solvent, a polymerization inhibitor, a catalyst and potassium ferrocyanide, performing a substitution reaction, and performing distillation under reduced pressure to obtain an acryloyl cyanide intermediate; b) mixing the acryloyl cyanide intermediate obtained in step a) with hydrochloric acid and a polymerization inhibitor, performing a hydrolysis reaction, and then performing purification treatment to obtain crude 2-carbonyl-3-butenoic acid; c) mixing the crude 2-carbonyl-3-butenoic acid obtained in step b) with a second solvent and methyldichlorophosphine, and performing an addition reaction to obtain a solution containing diacyl chloride; d) mixing the solution containing diacyl chloride obtained in step c) with water, performing a hydrolysis reaction, and performing purification to obtain 4-(hydroxymethylphosphinyl)-2-oxobutanoic acid.

Abstract: According to one embodiment, a sensor includes an element section. The element section includes a base including a first region, a second region and a third region, a first element fixed to the first region, a second element fixed to the second region, and a third element fixed to the third region. The first element includes a first fixed portion fixed to the first region, and a first film portion supported by the first fixed portion. The first film portion includes a first resistance member and a first layer including a first material. The second element includes a second fixed portion fixed to the second region, and a second film portion supported by the second fixed portion. The third element includes a third fixed portion fixed to the third region, and a third film portion supported by the third fixed portion.

Abstract: Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.