Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic read head. The magnetic read head includes an antiferromagnetic layer recessed from the MFS, a reference layer disposed over the antiferromagnetic layer, a free layer disposed over the reference layer, and a thermally conductive structure disposed over the reference layer. The thermally conductive structure is recessed from the MFS. The thermally conductive structure includes a first portion and a second portion. The first portion of the thermally conductive structure extends from the second portion of the thermally conductive structure towards the MFS. The first portion of the thermally conductive structure is aligned with the free layer in a stripe height direction. With the thermally conductive structure, thermal stabilization of the read head is achieved.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a heavy metal structure surrounding at least a portion of the main pole at a media facing surface (MFS), and two magnetic structures sandwiching the heavy metal structure. Spin-orbit torque (SOT) is generated from the heavy metal structure, inducing magnetization switching (or precession) in the magnetic structures. The SOT reduces the magnetic flux shunting from the main pole to the trailing shield, and the magnetization switching sharpens the write field profile in the cross-track direction. The SOT based head with the magnetic structures sandwiching the heavy metal structure increases both track density (tracks per inch) and linear density (bit per inch), which in turn increases the areal density capability (ADC), which is the product of tracks per inch and bit per inch.

Abstract: Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

Abstract: Various embodiments refer to a method for preparing an oxide film on a polymeric substrate, wherein the oxide film is a titanium oxide film (which is optionally niobium- or silicon-doped) or silicon oxide film. The method comprises contacting a polymeric substrate with a liquid reagent comprising a polyalkoxysilane such as 3-aminopropyltriethoxysilane to form a layer of the polyalkoxysilane on the polymeric substrate by self-assembly, and contacting said layer with an aqueous mixture comprising (i) titanium tetrafluoride and/or a fluorine-containing titanium complex such as ammonium hexafluorotitanate and/or a fluorine-containing silicon complex such as ammonium hexafluorosilicate, and (ii) a fluorine scavenger such as boric acid, at a temperature of less than about 100° C. to obtained the oxide film on the polymeric substrate. An oxide film prepared by said method is also provided.

Abstract: A water saving toilet system having a toilet including a toilet bowl having an upper portion and a lower portion, at least one valve interposed between a first water source and a second water source and the toilet bowl for controlling at least one volume of water flowing from the first water source and/or the second water source to the toilet bowl and a timing mechanism connected to the at least one valve for controlling an amount of time that the valve allows water to flow from the first water source and/or the second water source to the toilet bowl, wherein the at least one valve and the timing mechanism cooperate to adjust the flush volume.

Abstract: A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.

Abstract: A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

Abstract: Methods, systems, and computer readable media can be operable to facilitate the configuration of a device with service set information based upon an identification of a device-type associated with the device. A device-type identifier may be retrieved from a communication that is received from a device requesting a service from an access point. The device-type identifier may be compared to one or more correlations between device-types and service sets that are maintained within a database, and the device may be configured with information for a service set that is correlated with the retrieved device-type identifier, or the device may be configured with information for a default service set. Certain service sets offered by an access point may remain inactive when not in use, and if a device is configured with information for an inactive service set, the access point may automatically enable the service set.

Abstract: A method for preparing an amorphous metal oxide film is provided. The method comprises providing an aqueous composition comprising a metal fluorine compound; and contacting a substrate with the aqueous composition at a temperature of less than about 100° C. to obtain said amorphous metal oxide film on the substrate. An amorphous metal oxide film, and use of the amorphous metal oxide film in various applications are also provided.

Abstract: A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor layer on a substrate having an aspect ratio (AR)?5 and a trench depth?10 ?m. A dielectric liner is formed along the walls of the trench. An in-situ doped polysilicon layer having a first thickness is deposited into the trench to form a dielectric lined partially filled trench. An un-doped polysilicon layer having a second thickness greater than the first thickness is deposited on the in-situ doped polysilicon layer to complete a filling of the trench to provide a polysilicon filled trench. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25° C. sheet resistance?60 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor layer.

Abstract: A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) ?5 and a trench depth ?10 ?m. A dielectric liner is formed along the walls of the trench to form a dielectric lined trench. In-situ doped polysilicon is deposited into the trench to form a dielectric lined polysilicon filled trench having a doped polysilicon filler therein. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25° C. sheet resistance ?100 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor substrate.

Abstract: A scissor type magnetic sensor for magnetic data recording having a flux closure magnetic side shield structure. The magnetic sensor has a magnetic side shield structure that includes a non-magnetic layer within a magnetic material layer, with the non-magnetic layer being removed from the sensor stack so as to define upper and lower magnetic portions of the magnetic structure that are separated from one another at a region away from the sensor stack. The upper and lower magnetic portions are connected with one another in a region near the sensor stack so as to magnetic flux closure structure. The novel magnetic side shield structure provides net neutral magnetization that does not provide an inadvertent biasing to the magnetic free layers of the magnetic sensor.

Abstract: A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

Abstract: A scissor type magnetic sensor for magnetic data recording having a flux closure magnetic side shield structure. The magnetic sensor has a magnetic side shield structure that includes a non-magnetic layer within a magnetic material layer, with the non-magnetic layer being removed from the sensor stack so as to define upper and lower magnetic portions of the magnetic structure that are separated from one another at a region away from the sensor stack. The upper and lower magnetic portions are connected with one another in a region near the sensor stack so as to magnetic flux closure structure. The novel magnetic side shield structure provides net neutral magnetization that does not provide an inadvertent biasing to the magnetic free layers of the magnetic sensor.

Abstract: A scissor type magnetic sensor having an in stack magnetic bias structure for biasing first and second magnetic free layers. The in stack bias structure can include a magnetic tab that is exchange coupled with a magnetic shield so as to pin its magnetization in a desired direction parallel with the media facing surface. The magnetic tab can be separated from the free magnetic layer by a non-magnetic de-coupling layer that magnetically de-couples the magnetic tab from the magnetic free layer. A magnetostatic field from the edges of the magnetic tab can provide magnetic biasing for the magnetic free layer. Alternatively, the magnetic tab can be separated from the magnetic free layer by a very thin non-magnetic dusting layer that provides a weak magnetic exchange coupling (either parallel or anti-parallel) between the magnetic tab and the magnetic free layer.

Abstract: The present technology describes various embodiments of devices for processing, analyzing, detecting, measuring, and separating fluids. The devices can be used to perform these processes on a microfluidic scale, and with control over fluid and reagent transport. In one embodiment, for example, a device for performing chemical processes can include a porous wick comprising a pathway defined by an input end, an output end, and a length between the input end and the output end. The pathway is configured to wick fluid from the input end to the output end by capillary action. The device can further include a reagent placed on the pathway. The reagent can be placed in a pattern configured to control a spatial or temporal distribution of the reagent along the pathway upon wetting of the pathway.

Abstract: Methods, systems, and computer readable media can be operable to facilitate the configuration of a device with service set information based upon an identification of a device-type associated with the device. A device-type identifier may be retrieved from a communication that is received from a device requesting a service from an access point. The device-type identifier may be compared to one or more correlations between device-types and service sets that are maintained within a database, and the device may be configured with information for a service set that is correlated with the retrieved device-type identifier, or the device may be configured with information for a default service set. Certain service sets offered by an access point may remain inactive when not in use, and if a device is configured with information for an inactive service set, the access point may automatically enable the service set.

Abstract: In one embodiment, a method for forming a sensor includes forming a first free layer, forming a barrier layer above the first free layer, forming a second free layer above the barrier layer, the first free layer, the barrier layer, and the second free layer together forming a scissor sensor stack, forming a soft bias layer behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and forming a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the sensor to provide unidirectional anisotropy to the soft bias layer.

Abstract: According to one embodiment, a magnetic sensor includes a lower scissor free layer, and an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the scissor free layers has a generally T-shaped periphery. According to another embodiment, a method includes forming a lower scissor free layer, and forming an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the one of the scissor free layers has a generally T-shaped periphery.

Abstract: A water saving toilet system having a toilet including a toilet bowl having an upper portion and a lower portion, at least one valve interposed between a first water source and a second water source and the toilet bowl for controlling at least one volume of water flowing from the first water source and/or the second water source to the toilet bowl and a timing mechanism connected to the at least one valve for controlling an amount of time that the valve allows water to flow from the first water source and/or the second water source to the toilet bowl, wherein the at least one valve and the timing mechanism cooperate to adjust the flush volume.