Patents by Inventor Quang Le

Quang Le has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Scissor unidirectional biasing with hard bias stabilized soft bias
    Patent number: 9406320
    Abstract: In one embodiment, an apparatus includes a scissor sensor stack, a soft bias layer positioned behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the apparatus to provide unidirectional anisotropy to the soft bias layer, wherein the scissor sensor stack includes a first free layer, a second free layer positioned above the first free layer, and a barrier layer positioned between the first free layer and the second free layer. Other apparatuses and methods for forming such apparatuses are described in more embodiments.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: August 2, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Quang Le, David J. Seagle
  • SUPERHYDROPHILIC COATINGS
    Publication number: 20160168021
    Abstract: Method for preparing a superhydrophilic coating consisting essentially of silicon oxide is provided. The method includes providing an aqueous mixture comprising a fluorine-containing silicon complex and a fluorine scavenger; and contacting a substrate with the aqueous mixture at a temperature of less than about 100° C. to obtain said superhydrophilic coating on the substrate. Superhydrophilic coating consisting essentially of silicon dioxide islands with each island having a size in the range of about 10 nm to about 50 nm, and use of the superhydrophilic coating in various applications, such as lens, goggles, anti-fouling coatings, self-cleaning surfaces, mirrors, windshields, windows, primer layer for surfaces, and covers for cookware, are also provided.
    Type: Application
    Filed: July 29, 2014
    Publication date: June 16, 2016
    Inventors: Gregory Kia Liang Goh, Hong Quang Le
  • IN-SITU DOPED POLYSILICON FILLER FOR TRENCHES
    Publication number: 20160172235
    Abstract: A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) ?5 and a trench depth ?10 ?m. A dielectric liner is formed along the walls of the trench to form a dielectric lined trench. In-situ doped polysilicon is deposited into the trench to form a dielectric lined polysilicon filled trench having a doped polysilicon filler therein. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25° C. sheet resistance ?100 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor substrate.
    Type: Application
    Filed: December 15, 2014
    Publication date: June 16, 2016
    Inventors: BHASKAR SRINIVASAN, KHANH QUANG LE, COLLIN WHITE, SOPA CHEVACHAROENKUL, ASHLEY NORRIS, BERNARD JOHN FISCHER
  • TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
    Publication number: 20160163338
    Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.
    Type: Application
    Filed: December 3, 2014
    Publication date: June 9, 2016
    Applicant: HGST Netherlands B.V.
    Inventors: Kuok S. Ho, Nian Ji, Quang Le, Ying Li, Simon H. Liao, Guangli Liu, Xiaoyong Liu, Suping Song, Shuxia Wang, Hualiang Yu
  • Hybrid longitudinal-field bias side shield for a scissor magnetic sensor and methods of making the same
    Patent number: 9280992
    Abstract: In one embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and upper stabilization layers on opposite sides of the upper scissor free layer in a cross-track direction, where lower surfaces of the upper stabilization layers are above a plane extending along a top surface of the separation layer. In another embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and lower stabilization layers on opposite sides of the lower scissor free layer in a cross-track direction, where upper surfaces of the lower stabilization layers are below a plane extending along a bottom surface of the separation layer.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: March 8, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Hongquan Jiang, Quang Le, Xiaoyong Liu, Lei Wang
  • SCISSOR UNIDIRECTIONAL BIASING WITH HARD BIAS STABILIZED SOFT BIAS
    Publication number: 20160055866
    Abstract: In one embodiment, an apparatus includes a scissor sensor stack, a soft bias layer positioned behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the apparatus to provide unidirectional anisotropy to the soft bias layer, wherein the scissor sensor stack includes a first free layer, a second free layer positioned above the first free layer, and a barrier layer positioned between the first free layer and the second free layer. Other apparatuses and methods for forming such apparatuses are described in more embodiments.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 25, 2016
    Applicant: HGST Netherlands B.V.
    Inventors: Quang Le, David J. Seagle
  • Scissor reader with side shield decoupled from bias material
    Patent number: 9230576
    Abstract: Embodiments disclosed herein generally relate to a magnetic head having a sensor stack and a bias material that is aligned in a direction perpendicular to a media facing surface. The sensor stack and a first portion of the bias material are laterally bookended by synthetic antiferromagnetic (SAF) structures, and a second portion of the bias material is laterally bookended by a dielectric material. In this configuration, the SAF structures are decoupled from the bias material, which minimizes the disturbance to the bias material.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: January 5, 2016
    Assignee: HGST NETHERLANDS B.V.
    Inventors: Hardayal Singh Gill, Shiwen Huang, Quang Le, Guangli Liu, Xiaoyong Liu, Suping Song
  • Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer
    Patent number: 9202482
    Abstract: A magnetic sensor having a novel pinning structure resulting in a greatly reduced gap spacing. The sensor has a magnetic free layer structure that extends to a first stripe height and a magnetic pinned layer structure that extends to a second stripe height that is longer than the first stripe high. A layer of anti-ferromagnetic material is formed over the pinned layer structure in the region beyond the first stripe height location. In this way, the antiferromagnetic layer is between the pinned layer and the second or upper shield and does not contribute to gap spacing.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: December 1, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Quang Le, Simon H. Liao, Guangli Liu, Kochan Ju, Youfeng Zheng
  • Scissor magnetic read sensor with novel multi-layer bias structure for uniform free layer biasing
    Patent number: 9153258
    Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: October 6, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Quang Le, David J. Seagle, Neil Smith, Petrus A. Van Der Heijden
  • MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE AND SOFT MAGNETIC BIAS ALIGNED WITH FREE LAYER
    Publication number: 20150221328
    Abstract: A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 6, 2015
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Quang Le, Simon H. Liao, Guangli Liu, Stefan Maat, Shuxia Wang
  • Scissor sensor with back edge bias structure and novel dielectric layer
    Patent number: 9099122
    Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: August 4, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Hongquan Jiang, Quang Le, Thao Pham, David J. Seagle, Hicham M. Sougrati, Petrus A. Van Der Heijden
  • Scissor magnetic read sensor with shape enhanced soft magnetic side shield for improved stability
    Patent number: 9076468
    Abstract: A scissor type magnetic sensor having a soft magnetic side shields for improved sensor stability. The soft magnetic side shield structure extends from the side of the sensor and although being constructed of a low coercivity soft magnetic material it has a shape the causes the magnetization of the side shield layer to remain oriented in a desired direction parallel to the media facing surface. The side shields include first and second magnetic layers with an antiparallel coupling layer sandwiched between them. Each of the magnetic layers of the side shield structure has a width measured perpendicular to the media facing surface and a thickness measured perpendicular to the width and parallel with the media facing surface, both the width and the thickness being less than 10 times an intrinsic exchange length of the magnetic layer.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: July 7, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Christopher D. Keener, Quang Le, David J. Seagle, Neil Smith, Petrus A. Van Der Heijden
  • Magnetic read sensor with independently extended pinned layer and seed layer
    Patent number: 9053721
    Abstract: A magnetic read sensor having a magnetic seed layer, a pinned layer structure formed over the magnetic seed layer, a non-magnetic barrier or spacer layer formed over the pinned layer structure and a magnetic free layer structure formed over the non-magnetic barrier or spacer layer. The pinned layer has a stripe height (measured from the media facing surface) that is greater than a stripe height of the magnetic free layer structure. In addition, the magnetic seed layer structure has a stripe height (also measured from the media facing surface) that is greater than the stripe height of the magnetic pinned layer structure and the magnetic free layer structure. The stripe height of the magnetic seed layer structure can be controlled independently of the stripe heights of the magnetic pinned layer structure and the magnetic free layer structure.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: June 9, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Yongchul Ahn, David P. Druist, Zheng Gao, Ying Hong, Yunhe Huang, Quang Le, Thomas L. Leong, Guangli Liu, Xiaoyong Liu, David J. Seagle
  • SCISSOR SENSOR WITH BACK EDGE BIAS STRUCTURE AND NOVEL DIELECTRIC LAYER
    Publication number: 20150154990
    Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.
    Type: Application
    Filed: December 2, 2013
    Publication date: June 4, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Hongquan Jiang, Quang Le, Thao Pham, David J. Seagle, Hicham M. Sougrati, Petrus A. Van Der Heijden
  • SCISSOR MAGNETIC READ SENSOR WITH NOVEL MULTI-LAYER BIAS STRUCTURE FOR UNIFORM FREE LAYER BIASING
    Publication number: 20150154991
    Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.
    Type: Application
    Filed: December 3, 2013
    Publication date: June 4, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Quang Le, David J. Seagle, Neil Smith, Petrus A. Van Der Heijden
  • Magnetic sensor having narrow trackwidth and small read gap
    Patent number: 9047893
    Abstract: A magnetic sensor having a first sensor stack portion that includes a free layer, non-magnetic spacer or barrier layer and a portion of a pinned layer structure. The sensor has second sensor stack portion formed over the first sensor stack portion. The second sensor stack portion include includes a second portion of the pinned layer structure and a layer of antiferromagnetic material formed over the. The first sensor stack portion is configured with a width and stripe height that define the functional width and strip height of the sensor, whereas the upper portion can be made wider and deeper without affecting sensor performance. Because the patterning of the first sensor stack portion is performed on a thinner structure than would be necessary to pattern the entire sensor stack, the patterning can be performed with smaller dimensions and increased resolution.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: June 2, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Zheng Gao, Hardayal S. Gill, Ying Hong, Quang Le
  • Magnetic sensor with recessed AFM shape enhanced pinning and soft magnetic bias
    Patent number: 9042062
    Abstract: A magnetic read sensor having an antiferromagnetic located embedded within a magnetic shield of the sensor so that the antiferromagnetic layer can pin the magnetization of the pinned layer without contributing to read gap thickness. The sensor is configured with a pinned layer having a free layer structure located within an active area of the sensor and a pinned layer that extends beyond the free layer and active area of the sensor. The antiferromagnetic layer can be located outside of the active and exchange coupled with the extended portion of the pinned layer.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: May 26, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Ying Hong, Quang Le, Masaya Nishioka
  • LOW RESISTANCE MAGNETIC SENSOR WITH EXTENDED PINNED LAYER STRUCTURE
    Publication number: 20150118520
    Abstract: A magnetic read sensor having improved pinning and reduced area resistance. The sensor has pinned magnetic layer that extends beyond the functional stripe of the sensor to improve magnetic pinning. The free layer has a magnetic portion that extends to the functional stripe height and a non-magnetic portion that extends beyond the functional stripe height. The sensor may have an end point detection layer located between the magnetic pinned layer and the magnetic free layer.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 30, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Yongchul Ahn, Xiaozhong Dang, Cherngye Hwang, Quang Le, Simon H. Liao, Guangli Liu, Stefan Maat
  • MAGNETIC SENSOR HAVING AN EXTENDED PINNED LAYER WITH STITCHED ANTIFERROMAGNETIC PINNING LAYER
    Publication number: 20150062751
    Abstract: A magnetic sensor having a novel pinning structure resulting in a greatly reduced gap spacing. The sensor has a magnetic free layer structure that extends to a first stripe height and a magnetic pinned layer structure that extends to a second stripe height that is longer than the first stripe high. A layer of anti-ferromagnetic material is formed over the pinned layer structure in the region beyond the first stripe height location. In this way, the antiferromagnetic layer is between the pinned layer and the second or upper shield and does not contribute to gap spacing.
    Type: Application
    Filed: August 27, 2013
    Publication date: March 5, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Quang Le, Simon H. Liao, Guangli Liu, Kochan Ju, Youfeng Zheng
  • MAGNETIC SENSOR WITH RECESSED AFM SHAPE ENHANCED PINNING AND SOFT MAGNETIC BIAS
    Publication number: 20150062752
    Abstract: A magnetic read sensor having an antiferromagnetic located embedded within a magnetic shield of the sensor so that the antiferromagnetic layer can pin the magnetization of the pinned layer without contributing to read gap thickness. The sensor is configured with a pinned layer having a free layer structure located within an active area of the sensor and a pinned layer that extends beyond the free layer and active area of the sensor. The antiferromagnetic layer can be located outside of the active and exchange coupled with the extended portion of the pinned layer.
    Type: Application
    Filed: August 27, 2013
    Publication date: March 5, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Ying Hong, Quang Le, Masaya Nishioka