Abstract: A memory device that, in certain embodiments, includes a memory element and a digital filter. The digital filter may include a counter and a divider, where the divider is configured to divide a count from the counter by a divisor.

Abstract: Systems, methods, and devices are disclosed, such as an integrated semiconductor device that may include a data location coupled to an electrical conductor, a delta-sigma modulator coupled to the electrical conductor, a counter coupled to an output of the delta-sigma modulator, and an interfuser coupled to an output of the counter. In some embodiments, the interfuser is configured to receive two or more counts from the counter and read data conveyed by the data location based on the two or more counts.

Abstract: A device that includes an internal data storage location coupled to an electrical conductor and an analog-to-digital converter coupled to the internal data storage location via the electrical conductor. In some embodiments, the analog-to-digital converter includes a comparator having an input coupled to the electrical conductor and a switch coupled to the electrical conductor.

Abstract: A K-Delta-1-Sigma modulator filters or integrates (Sigma) the difference (Delta) between K-feedback paths and an input signal. By using K-feedback paths the topology enables sample rates that are K times the clock frequency of any one feedback path. The sigma block can be implemented in a number of ways including an active or passive integrator or a filter with specific characteristics. When implemented as an integrator, the sigma block is common to all the feedback paths, so that the modulation noise is pushed to a portion of the spectrum where it can be reduced by filtering. The delta block can be implemented in a number of ways including analog adders or switched capacitors.

Abstract: A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.

Abstract: An electronic device that includes an internal data storage location coupled to an electrical conductor and a quantizing circuit coupled to the internal data storage location via the electrical conductor. In some embodiments, the quantizing circuit includes an analog-to-digital converter having an input and an output, where the input is coupled to the electrical conductor and a digital filter coupled to the output of the analog-to-digital converter.

Abstract: A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.

Abstract: A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.

Abstract: An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.

Abstract: Systems, methods, and devices for obtaining data from a data location. The method may include generating a first value by sensing a data location under a first condition and generating a second value by sensing the data location under a second condition. The method may further include combining the first value with the second value to identify data conveyed by the data location.

Abstract: A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.

Abstract: Systems, methods, and devices, such as a device including a floating-gate transistor, a quantizing circuit coupled to the floating-gate transistor, and a controller configured to vary a voltage of a gate of the floating-gate transistor when reading data from the floating-gate transistor. The floating-gate transistor, the quantizing circuit, and the controller device may form a memory device that may utilize the quantizing circuit to retrieve data stored via variable reference signals.

Abstract: A circuit for reducing a mismatch between a reference path to which a reference voltage is applied and an intensity path to which an intensity voltage is applied from an active pixel sensor comprises a first and a second pair of switches and a processing circuit. The first pair of switches couple an intensity input node to which the intensity voltage is applied to a first output node and couple a reference input node to which the reference voltage is applied to a second output node during a first operating period. The second pair of switches couple the intensity input node to the second output node and couple the reference input node to the first output node during a second operating period. A polarity reversing circuit is included in the processing circuit for coupling the first and second output nodes to the processing circuit with one polarity during the first operating period and in a reverse polarity during the second operating period.

Abstract: A circuit for reducing a mismatch between a reference path to which a reference voltage is applied and an intensity path to which an intensity voltage is applied from an active pixel sensor comprises a first and a second pair of switches and a processing circuit. The first pair of switches couple an intensity input node to which the intensity voltage is applied to a first output node and couple a reference input node to which the reference voltage is applied to a second output node during a first operating period. The second pair of switches couple the intensity input node to the second output node and couple the reference input node to the first output node during a second operating period. A polarity reversing circuit is included in the processing circuit for coupling the first and second output nodes to the processing circuit with one polarity during the first operating period and in a reverse polarity during the second operating period.

Abstract: A simple method and device for accurately measuring flash memory cell current. The sensing scheme comprises an integrator, an analog to digital converter, and a digital to analog converter. The method comprises the acts of applying an input current and a feedback output current to a summer, integrating the resulting summer output over time, passing the integrated output to a clocked comparator, outputting a comparator output which controls a feedback circuit that keeps the integrator's voltage at the same level as a reference voltage, and outputting a digital average current to a counter. Delta sigma modulation (averaging) is employed to cancel out noise that would otherwise affect the cell current measurement.

Abstract: Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first configuration to a second configuration, where the second configuration changes the polarity of the integrator circuit from the first configuration. The output signals of the integrator circuit are periodically compared, and based on the comparison, output signals having a voltage representative of a value are generated. The values of the output signals are then averaged over time to determine the data state.

Abstract: An apparatus and method is disclosed to compensate for skew and asymmetry of a locally processed system clock used to synchronize an output signal, e.g., a data signal or a timing signal, from a logic circuit, for example a memory device. A first phase detector, array of delay lock loop (DLL) delay elements and accompanying circuitry are disclosed to phase-lock the rising edge of the output signal with the rising edge of the system clock XCLK signal. Additionally, a comparator circuit, a register delay, an array of DLL delay elements and accompanying circuitry are disclosed to add or subtract delay from the falling edge of the DQ signal in order to produce a symmetrical output of the DQ signal.

Abstract: Systems, methods, and devices are disclosed, including an electronic device that includes a first data location, a quantizing circuit, and a reference current source, all coupled to an electrical conductor. The reference current source may include a current mirror with a side coupled to the electrical conductor and a second data location coupled to another side of the current mirror.

Abstract: Systems, methods, and devices are disclosed, including a device that includes a plurality of data locations, a quantizing circuit coupled to the plurality of data locations, and an error detection module coupled to the quantizing circuit. In some embodiments, the error detection module includes an encoder configured to encode incoming data with redundant data derived from the incoming data and a decoder configured to detect errors in stored data based on the redundant data.

Abstract: A memory device that, in certain embodiments, includes a memory element and a digital filter. The digital filter may include a counter and a divider, where the divider is configured to divide a count from the counter by a divisor.