Abstract: An electronic device that includes an internal data storage location coupled to an electrical conductor and a quantizing circuit coupled to the internal data storage location via the electrical conductor. In some embodiments, the quantizing circuit includes an analog-to-digital converter having an input and an output, where the input is coupled to the electrical conductor and a digital filter coupled to the output of the analog-to-digital converter.

Abstract: Methods, systems and devices are disclosed. Among the disclosed devices is an electronic device that, in certain embodiments, includes a plurality of memory elements or imaging elements connected to a bit-line and a delta-sigma modulator connected to the bit-line. The delta-sigma modulator may include an integrator having a differential amplifier.

Abstract: Disclosed are methods, systems and devices, such as a device including a data location, a quantizing circuit coupled to the data location, and a test module coupled to the quantizing circuit. In one or more embodiments, the test module can include a linear-feedback shift register.

Abstract: Methods, systems and devices are disclosed, such as an electronic device that includes a plurality of data locations and a delta-sigma modulator. In some embodiments, the delta-sigma modulator includes a preamplifier coupled to the data locations and a latch coupled to the preamplifier.

Abstract: A memory device that, in certain embodiments, includes a plurality of memory elements connected to a bit-line and a delta-sigma modulator with a digital output and an analog input, which may be connected to the bit-line. In some embodiments, the delta-sigma modulator includes an adder with first and second inputs and an output. The first input may be connected to the analog input. The delta-sigma modulator may also include an integrator connected to the output of the adder, an analog-to-digital converter with an input connected to an output of the integrator and an output connected to the digital output, and a digital-to-analog converter with an input connected to the output of the analog-to-digital converter and an output connected to the second input of the adder.

Abstract: Systems, methods, and devices are disclosed, such as an integrated semiconductor device that may include a data location coupled to an electrical conductor, a delta-sigma modulator coupled to the electrical conductor, a counter coupled to an output of the delta-sigma modulator, and an interfuser coupled to an output of the counter. In some embodiments, the interfuser is configured to receive two or more counts from the counter and read data conveyed by the data location based on the two or more counts.

Abstract: A memory device that, in certain embodiments, includes a memory element coupled to a bit-line and a quantizing circuit coupled to the memory element via the bit-line. In some embodiments, the quantizing circuit includes an analog-to-digital converter having an input and output and a digital filter that includes memory. The input of the analog-to-digital converter may be coupled to the bit-line, and the output of the analog-to-digital converter may be coupled to the digital filter.

Abstract: Methods, systems, and devices are disclosed, such as a method of operating a memory device. In certain embodiments, such a method includes writing a plurality of data values to a plurality of data locations. The plurality of data locations may be coupled to one another in a series, and the plurality of data values may be sequentially written to the plurality of data locations, starting with the data location at an end of the series and then sequentially writing to each adjacent data location.

Abstract: Systems, methods, and devices are disclosed, such as a device including a floating-gate transistor, a quantizing circuit coupled to the floating-gate transistor, and a controller configured to vary a voltage of a gate of the floating-gate transistor when reading data from the floating-gate transistor.

Abstract: A per column one-bit analog-to-digital converter for an image sensor. The analog-to-digital converter utilizes the difference between a reference signal current and a pixel signal current to obtain a digital output representative of the analog pixel signal in an efficient and simple manner. The output of the one-bit analog-to-digital converter is fed to a counter to give a representation of the brightness of the light-to-charge conversion in the associated pixel. The analog-to-digital converter does not use a reference voltage and precision elements and thus, does not suffer from power supply, noise and precision variations.

Abstract: An apparatus and method is disclosed to compensate for skew and asymmetry of a locally processed system clock used to synchronize an output signal, e.g., a data signal or a timing signal, from a logic circuit, for example a memory device. A first phase detector, array of delay lock loop (DLL) delay elements and accompanying circuitry are disclosed to phase-lock the rising edge of the output signal with the rising edge of the system clock XCLK signal. Additionally, a comparator circuit, a register delay, an array of DLL delay elements and accompanying circuitry are disclosed to add or subtract delay from the falling edge of the DQ signal in order to produce a symmetrical output of the DQ signal.

Abstract: A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.

Abstract: A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.

Abstract: Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first configuration to a second configuration, where the second configuration changes the polarity of the integrator circuit from the first configuration. The output signals of the integrator circuit are periodically compared, and based on the comparison, output signals having a voltage representative of a value are generated. The values of the output signals are then averaged over time to determine the data state.

Abstract: A pair of self-biased differential amplifiers having a non-symmetrical topology are combined to provide a self-biased differential amplifier having a symmetrical topology. Each of the combined differential amplifiers includes a pair of transistors coupled to each other as a current mirror. The current mirror transistors are coupled in series with a respective one of a pair of differential input transistors. A current source transistor is coupled to the differential input transistors, and it is self-biased by one of the current mirror transistors.

Abstract: An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.

Abstract: A method and apparatus for reducing the duty cycle distortion of a periodic signal in high speed devices. More specifically, there is provided a device having a switching point modulation circuit coupled to input logic and configured to modulate the periodic output signal from the input logic such that the periodic output signal is centered about a known voltage signal, such as a switching point voltage signal.

Abstract: A method and apparatus for reducing the duty cycle distortion of a periodic signal in high speed devices. More specifically, there is provided a device having a switching point modulation circuit coupled to input logic and configured to modulate the periodic output signal from the input logic such that the periodic output signal is centered about a known voltage signal, such as a switching point voltage signal.

Abstract: A variable resistance memory sense amplifier has a built-in offset to assist in switching the sense amplifier when a resistive memory cell is in a low resistance state. The built-in offset can be achieved by varying size, threshold voltage, associated capacity or associated resistance of the transistors within the sense amplifier.

Abstract: An apparatus and method is disclosed to compensate for skew and asymmetry of a locally processed system clock used to synchronize an output signal, e.g., a data signal or a timing signal, from a logic circuit, for example a memory device. A first phase detector, array of delay lock loop (DLL) delay elements and accompanying circuitry are disclosed to phase-lock the rising edge of the output signal with the rising edge of the system clock XCLK signal. Additionally, a comparator circuit, a register delay, an array of DLL delay elements and accompanying circuitry are disclosed to add or subtract delay from the falling edge of the DQ signal in order to produce a symmetrical output of the DQ signal.