Patents by Inventor Rai-Min Huang

Rai-Min Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10090398
    Abstract: A method of fabricating a patterned structure of a semiconductor device includes the following steps: providing a substrate having a target layer thereon; forming a patterned sacrificial layer on the target layer, wherein the patterned sacrificial layer consists of a plurality of sacrificial features; forming spacers respectively on sidewalls of each of the sacrificial features, wherein all of the spacers are arranged to have a layout pattern; and transferring the layout pattern to the target layer so as to form a first feature and a second feature, wherein the first feature comprises a vertical segment and a horizontal segment, the second feature comprises a vertical segment and a horizontal segment, and a distance between the vertical segment of the first feature and the vertical segment of the second feature is less than a minimum feature size generated by an exposure apparatus.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: October 2, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Rai-Min Huang, I-Ming Tseng, Tong-Jyun Huang, Kuan-Hsien Li
  • Patent number: 9859402
    Abstract: The present invention provides a manufacturing method of a semiconductor device, including providing a substrate, where a first dielectric layer is formed on the substrate, at least one gate is formed in the first dielectric layer, at least one hard mask is disposed on the top surface of the gate, and at least two spacers are disposed on two sides of the gate respectively. Next, a blanket implantation process is performed on the hard mask and the first dielectric layer, so as to form an ion rich region in the first dielectric layer, in the hard mask and in the spacer respectively. An etching process is then performed to form a plurality of trenches in the first dielectric layer, and a conductive layer is filled in each trench to form a plurality of contacts in the first dielectric layer.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: January 2, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Rai-Min Huang
  • Patent number: 9859147
    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: January 2, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tong-Jyun Huang, Rai-Min Huang, I-Ming Tseng, Kuan-Hsien Li, Chen-Ming Huang
  • Publication number: 20170309727
    Abstract: A method of fabricating a patterned structure of a semiconductor device includes the following steps: providing a substrate having a target layer thereon; forming a patterned sacrificial layer on the target layer, wherein the patterned sacrificial layer consists of a plurality of sacrificial features; forming spacers respectively on sidewalls of each of the sacrificial features, wherein all of the spacers are arranged to have a layout pattern; and transferring the layout pattern to the target layer so as to form a first feature and a second feature, wherein the first feature comprises a vertical segment and a horizontal segment, the second feature comprises a vertical segment and a horizontal segment, and a distance between the vertical segment of the first feature and the vertical segment of the second feature is less than a minimum feature size generated by an exposure apparatus.
    Type: Application
    Filed: July 12, 2017
    Publication date: October 26, 2017
    Inventors: Rai-Min Huang, I-Ming Tseng, Tong-Jyun Huang, Kuan-Hsien Li
  • Patent number: 9786502
    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: October 10, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuan-Hsien Li, Rai-Min Huang, I-Ming Tseng, Wen-An Liang, Chen-Ming Huang
  • Publication number: 20170263454
    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 14, 2017
    Inventors: Kuan-Hsien Li, Rai-Min Huang, I-Ming Tseng, Wen-An Liang, Chen-Ming Huang
  • Patent number: 9755048
    Abstract: A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: September 5, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Rai-Min Huang, I-Ming Tseng, Tong-Jyun Huang, Kuan-Hsien Li
  • Patent number: 9583568
    Abstract: The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of first fin structures disposed in the substrate, where each first fin structure and the substrate have same material, and a plurality of second fin structures disposed in the STI, where each second fin structure and the STI have same material.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 28, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: En-Chiuan Liou, Ssu-I Fu, Chia-Lin Lu, Shih-Hung Tsai, Chih-Wei Yang, Chia-Ching Lin, Chia-Hsun Tseng, Rai-Min Huang
  • Publication number: 20170047244
    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.
    Type: Application
    Filed: October 28, 2016
    Publication date: February 16, 2017
    Inventors: Tong-Jyun Huang, Rai-Min Huang, I-Ming Tseng, Kuan-Hsien Li, Chen-Ming Huang
  • Patent number: 9524909
    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: December 20, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tong-Jyun Huang, Rai-Min Huang, I-Ming Tseng, Kuan-Hsien Li, Chen-Ming Huang
  • Patent number: 9466691
    Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: October 11, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: I-Ming Tseng, Rai-Min Huang, Tong-Jyun Huang, Kuan-Hsien Li, Chen-Ming Huang
  • Publication number: 20160293726
    Abstract: A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus.
    Type: Application
    Filed: May 13, 2015
    Publication date: October 6, 2016
    Inventors: Rai-Min Huang, I-Ming Tseng, Tong-Jyun Huang, Kuan-Hsien Li
  • Publication number: 20160293491
    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.
    Type: Application
    Filed: April 27, 2015
    Publication date: October 6, 2016
    Inventors: Tong-Jyun Huang, Rai-Min Huang, I-Ming Tseng, Kuan-Hsien Li, Chen-Ming Huang
  • Publication number: 20160276429
    Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a spacer layer and a dummy gate structure. The fin shaped structure is disposed on a substrate, wherein the fin shaped structure has a trench. The spacer layer is disposed on sidewalls of the trench. The dummy gate structure is disposed across the trench and includes a portion thereof disposed in the trench.
    Type: Application
    Filed: April 13, 2015
    Publication date: September 22, 2016
    Inventors: I-Ming Tseng, Wen-An Liang, Rai-Min Huang, Chen-Ming Huang, Tong-Jyun Huang, Kuan-Hsien Li
  • Publication number: 20160276465
    Abstract: The present invention provides a manufacturing method of a semiconductor device, including providing a substrate, where a first dielectric layer is formed on the substrate, at least one gate is formed in the first dielectric layer, at least one hard mask is disposed on the top surface of the gate, and at least two spacers are disposed on two sides of the gate respectively. Next, a blanket implantation process is performed on the hard mask and the first dielectric layer, so as to form an ion rich region in the first dielectric layer, in the hard mask and in the spacer respectively. An etching process is then performed to form a plurality of trenches in the first dielectric layer, and a conductive layer is filled in each trench to form a plurality of contacts in the first dielectric layer.
    Type: Application
    Filed: March 16, 2015
    Publication date: September 22, 2016
    Inventors: Ching-Wen Hung, Rai-Min Huang
  • Patent number: 9406805
    Abstract: A Fin-FET and a method of forming the Fin-FET are provided. A substrate is provided, and then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: August 2, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chen-Hua Tsai, Rai-Min Huang, Sheng-Huei Dai, Chun-Hsien Lin
  • Publication number: 20160204197
    Abstract: The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of first fin structures disposed in the substrate, where each first fin structure and the substrate have same material, and a plurality of second fin structures disposed in the STI, where each second fin structure and the STI have same material.
    Type: Application
    Filed: February 3, 2015
    Publication date: July 14, 2016
    Inventors: En-Chiuan Liou, Ssu-I Fu, Chia-Lin Lu, Shih-Hung Tsai, Chih-Wei Yang, Chia-Ching Lin, Chia-Hsun Tseng, Rai-Min Huang
  • Patent number: 9385193
    Abstract: A FINFET transistor structure includes a substrate including a fin structure. Two combined recesses embedded within the substrate, wherein each of the combined recesses includes a first recess extending in a vertical direction and a second recess extending in a lateral direction, the second recess has a protruding side extending to and under the fin structure. Two filling layers respectively fill in the combined recesses. A gate structure crosses the fin structure.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: July 5, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Rai-Min Huang, Sheng-Huei Dai, Chen-Hua Tsai, Duan Quan Liao, Yikun Chen, Xiao Zhong Zhu
  • Publication number: 20160141387
    Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.
    Type: Application
    Filed: November 13, 2014
    Publication date: May 19, 2016
    Inventors: I-Ming Tseng, Rai-Min Huang, Tong-Jyun Huang, Kuan-Hsien Li, Chen-Ming Huang
  • Patent number: 9312352
    Abstract: A method for fabricating a field-effect transistor is provided. The method includes: forming a gate dielectric layer and a barrier layer on a substrate in sequence; forming a first silicon layer on and in contact with the barrier layer; performing a thermal treatment to form a silicide layer between the barrier layer and the first silicon layer; and forming a second silicon layer on and in contact with the first silicon layer.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: April 12, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Kun-Yuan Lo, Chih-Wei Yang, Cheng-Guo Chen, Rai-Min Huang, Jian-Cun Ke