Abstract: An example molded fluidic die assembly includes a fluidic die including an electrical component and a fluidic architecture on a first face of the fluidic die, the fluidic architecture including a front face; circuitry; an electrical connection coupling the circuitry to the electrical component on the first face of the fluidic die; and a continuous molded compound that surrounds the fluidic die and encompasses the electrical connection.

Abstract: An example fluidic device may comprise a fluidic die and a support element coupled to the fluidic die. A fluid channel may be arranged within the support element and may define a fluid path through the support element and a fluid aperture of the fluidic die. A conductive element may be arranged in the fluid path and be coupled to a ground of the fluidic die. A material and size of the conductive element may be selected to engender galvanic effect at an approximately zero potential.

Abstract: Examples include a fluidic device comprising a fluidic die, a support element, and a conductive member. The support element is coupled to the fluidic die, and the support element has a fluid channel formed therein. The fluid channel exposes at least a portion of a back surface of the fluidic die. The support element further includes a member opening passing therethrough. The conductive member is connected to the fluidic die, and the conductive member is a least partially disposed in the member opening such that a portion of the conductive member is exposed to the fluid channel of the support element.

Abstract: An example fluidic device may comprise a fluidic die and a support element coupled to the fluidic die. A fluid channel may be arranged within the support element and may define a fluid path through the support element and a fluid aperture of the fluidic die. A conductive element may be arranged in the fluid path and be coupled to a ground of the fluidic die. A material and size of the conductive element may be selected to engender galvanic effect at an approximately zero potential.

Abstract: Examples include a fluidic device comprising a fluidic die, a support element, and a conductive member. The support element is coupled to the fluidic die, and the support element has a fluid channel formed therein. The fluid channel exposes at least a portion of aback surface of the fluidic die. The support element further includes a member opening passing therethrough. The conductive member is connected to the fluidic die, and the conductive member is a least partially disposed in the member opening such that a portion of the conductive member is exposed to the fluid channel of the support element.

Abstract: A printed circuit board includes a recessed pocket. A fluid droplet ejection die is within recessed pocket.

Abstract: A printed circuit board includes a recessed pocket. A fluid droplet ejection die is within recessed pocket.

Abstract: Systems and methods are shown which provide processor-based self-service systems for use with respect to controlled environment facilities. Embodiments provide processor-based self-service systems having robust input/output capabilities in order to support a wide range of functionality. Processor-based self-service systems of embodiments are adapted to be deployed within a controlled environment facility, such as within a lobby area, a holding area, and/or a restricted area of a controlled environment facility. According to embodiments, processor-based self-service systems are used with respect to a plurality of functions and a plurality of users, thereby processing a variety of information associated with a controlled environment facility. Embodiments operate to aggregate, compile, correlate, and link information to provide data heretofore unavailable from separate or manual systems used with respect to controlled environment facilities.

Abstract: An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide.

Abstract: An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising zinc-gallium oxide, zinc-indium oxide, zinc-gallium-tin oxide, or zinc-indium-tin oxide.

Abstract: A method of driving a display, the method comprising applying a switching voltage to the display, the switching voltage causing an amount of electrically charged pigment particles to be compacted into a number of wells defined in a dielectric layer in the display, applying a transition waveform to the display, and applying a holding voltage to the display.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide.

Abstract: A battery temperature sensor may include a substrate and a thin film resistive temperature device (RTD). The substrate can be layered on a battery cell element. The battery cell element can be an anode, a cathode, and a separator between the anode and cathode used in a battery cell. The thin film resistive temperature device (RTD) on the flexible substrate can change resistance with a change in temperature. A battery cell housing can enclose the thin film RTD.

Abstract: In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract: A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Abstract: Systems and methods in which call intelligence, such as may be deployed in communication with signaling systems utilized in controlling calls and telecommunication databases, is used to analyze information about a call in order to make a determination as to the likelihood or risk that call redirecting, such as call forwarding or remote call forwarding, will be invoked with respect to a call are shown. The call intelligence, upon a determination that an unacceptable risk that call redirecting will be invoked, preferably institutes appropriate call treatment or handling procedures, such as to block the call or to allow the call while invoking additional call treatment action.