Abstract: This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one portion; and creating an oxidizable layer located substantially adjacent to the deposited deformable material such that at least a portion of the oxidized portion of the oxidizable layer interacts with the at least one portion of the deformable material to apply a localized pressure upon the at least one portion of the deformable material.

Abstract: Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.

Abstract: This invention relates to a method of encapsulating nano-dimensional structures, comprising: depositing at least one material upon a substrate such that the material includes at least one portion; and creating an oxidized layer located substantially adjacent to the deposited material such that the at least one portion of the deposited material becomes substantially encapsulated by a portion of the oxidized layer.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.

Abstract: Disclosed are systems and methods in which call intelligence, such as may be disposed in communication with signaling systems utilized in controlling calls, is used to provide information for making determinations with respect to the treatment of calls. Call intelligence may be coupled to or disposed within such networks to receive signaling therefrom and/or transmit signaling thereto for determining the appropriate treatment of a call and, preferably, controlling the treatment of a call in accordance with such determination. Signaling messages received by call intelligence may be utilized to determine that a particular calling activity (e.g., enhanced calling service such as call redirecting or three-way calling) is being employed, to collect data with respect to a call, and the like.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract: A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion disposed on the plurality of circuit components, and a patterned passivation dielectric selectively disposed on the unpatterned channel portion to electrically pattern an active region of the unpatterned channel portion.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: Embodiments of methods, apparatuses, components, and/or systems for forming transistor having a dual layer dielectric are described.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Abstract: A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: Embodiments of methods, apparatuses, components, and/or systems for forming transistor having a dual layer dielectric are described.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.