Abstract: A battery temperature sensor may include a substrate and a thin film resistive temperature device (RTD). The substrate can be layered on a battery cell element. The battery cell element can be an anode, a cathode, and a separator between the anode and cathode used in a battery cell. The thin film resistive temperature device (RTD) on the flexible substrate can change resistance with a change in temperature. A battery cell housing can enclose the thin film RTD.

Abstract: Disclosed are systems and methods which allow a calling party to store messages for a called party even if the called party does not already have message storage facilities, provided the calling party and/or called party meet certain parameters. Delivery of the message is controlled by the called party and may require the called party to agree to pay for the message delivery service. In a further embodiment, a call processing system is operable to screen outgoing calls from various callers according to a first set of criteria and if a call is not completed to a called party a second set of criteria is used to determine if a message can be stored awaiting retrieval by the called party. If desired, a return message from a called party to a calling party can be stored.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit components, and a patterned passivation dielectric (380,385) selectively disposed on the unpatterned channel portion (108, 340) to electrically pattern an active region of the unpatterned channel portion (108,340).

Abstract: In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.

Abstract: A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: Disclosed are systems and methods which provide techniques providing account setup, management and transaction authorization determinations in real-time using transaction interrupt messaging. Embodiments preferably take into consideration the quality of one or more parties to the transaction and the means by which charges may be rendered to them when making account setup, management, and/or transaction authorization determinations. Accordingly, transactions, such as collect calls, meeting at least some minimal risk threshold may be completed on a first call attempt, even where a pre-arranged billing agreement or other business relationship is not previously in place.

Abstract: In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric adjacent the gate electrode. The TFT also includes a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric. The TFT also includes a drain electrode laterally offset from the gate electrode by at least 2 ?m and separated from the gate electrode by the gate dielectric. The TFT also includes an extended oxide channel between the source electrode and the drain electrode, wherein a portion of the extended oxide channel is ungated.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit components, and a patterned passivation dielectric (380,385) selectively disposed on the unpatterned channel portion (108,340) to electrically pattern an active region of the unpatterned channel portion (108,340).

Abstract: A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film.

Abstract: A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.

Abstract: Disclosed are systems and methods which allow a calling party to store messages for a called party even if the called party does not already have message storage facilities, provided the calling party and/or called party meet certain parameters. Delivery of the message is controlled by the called party and may require the called party to agree to pay for the message delivery service. In a further embodiment, a call processing system is operable to screen outgoing calls from various callers according to a first set of criteria and if a call is not completed to a called party a second set of criteria is used to determine if a message can be stored awaiting retrieval by the called party. If desired, a return message from a called party to a calling party can be stored.

Abstract: Systems and methods for the dissemination of information from a controlled environment facility employ facility information management functionality managing resident information and facility information, and call manager functionality selectively providing at least a portion of the resident information and/or the facility information to an outside party in an automated manner. The invention may employ outgoing IVR functionality to provide select portions of the resident information in response to the call manager recognizing that a call is a first call by a resident, or a first call to a particular telephone number by a resident. The invention may manage information related to providers of services or goods for residents of a facility, provide an outside party this information, and notify a selected provider of selection of that provider by the outside party to provide goods or services for a resident.

Abstract: A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.

Abstract: A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.