Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality of regions includes a normalized surface that has an optical property that has a normalized value that is substantially the same, one to another. One of the regions includes a portion of an electrical component. Additionally, at least one of the regions includes beneath the normalized surface an additional surface and a spectral normalization structure. The additional surface has a value for the optical property that is not substantially the same as the normalized value. The spectral normalization structure is disposed with the additional surface such that the normalized surface of the at least one region exhibits the normalized value.

Abstract: A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.

Abstract: An electroluminescent device using an inorganic phosphor configured to produce electroluminescence from the recombination of injected holes and injected electrons is disclosed. A controllable hole injection structure in contact with the inorganic phosphor controls a rate of hole injection into the inorganic phosphor based on a first applied control voltage. A controllable electron injection structure in contact with the inorganic phosphor and separated from the controllable hole injection structure controls a rate of electron injection into the inorganic phosphor based on a second applied control voltage.

Abstract: Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality of regions includes a normalized surface that has an optical property that has a normalized value that is substantially the same, one to another. One of the regions includes a portion of an electrical component. Additionally, at least one of the regions includes beneath the normalized surface an additional surface and a spectral normalization structure. The additional surface has a value for the optical property that is not substantially the same as the normalized value. The spectral normalization structure is disposed with the additional surface such that the normalized surface of the at least one region exhibits the normalized value.

Abstract: A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.

Abstract: A semiconductor device including a source electrode, a drain electrode and a channel coupled to the source electrode and the drain electrode. The channel is comprised of a ternary compound containing zinc, tin and oxygen. The semiconductor device further includes a gate electrode configured to permit application of an electric field to the channel.

Abstract: In one embodiment, the present invention is directed to a method of offering a service to a user. The method comprises receiving a dialed number from a request to initiate a collect telephone call from an origination source; processing the dialed number to determine whether payment may be received for the collect telephone call, wherein the processing blocks the collect call and stores the dialed number when the processing determines that payment may not be received for the collect telephone call; and establishing a telephone connection with the dialed number to communicate an offer for the service to a user associated with the dialed number.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: A transparent active-matrix display based on a substrate has a multiplicity of transparent active pixel elements arranged in an array and transparent electrical connections to each pixel, whereby each of the pixel elements is adapted to be set independently to two or more states. In some embodiments, the substrate may also be transparent.

Abstract: In one embodiment, the present invention is directed to a method of offering a service to a user. The method comprises receiving a dialed number from a request to initiate a collect telephone call from an origination source; processing the dialed number to determine whether payment may be received for the collect telephone call, wherein the processing blocks the collect call and stores the dialed number when the processing determines that payment may not be received for the collect telephone call; and establishing a telephone connection with the dialed number to communicate an offer for the service to a user associated with the dialed number.