Abstract: Systems and methods of managing defects in nonvolatile storage systems that can be used to avoid an inadvertent loss of data, while maintaining as much useful memory in the nonvolatile storage systems as possible. The disclosed systems and methods can monitor a plurality of trigger events for detecting possible defects in one or more nonvolatile memory (NVM) devices included in the nonvolatile storage systems, and apply one or more defect management policies to the respective NVM devices based on the types of trigger events that resulted in detection of the possible defects. Such defect management policies can be used proactively to retire memory in the nonvolatile storage systems with increased granularity, focusing the retirement of memory on regions of nonvolatile memory that are likely to contain a defect.

Abstract: Embodiments of the present disclosure describe device, methods, computer-readable media and system configurations for decoding codewords using a side channel. In various embodiments, a memory controller may be configured to determine that m of n die of non-volatile memory (“NVM”) have failed iterative decoding. In various embodiments, the memory controller may be further configured to generate a side channel from n-m non-failed die and the m failed die other than a first failed die. In various embodiments, the memory controller may be further configured to reconstruct, using iterative decoding, a codeword stored on the first failed die of the m failed die based on the generated side channel and on soft input to an attempt to iteratively decode data stored on the first failed die. In various embodiments, the iterative decoding may include low-density parity-check decoding. Other embodiments may be described and/or claimed.

Abstract: A corresponding portion of storage (such as one or more storage cells) is assigned one of multiple different error correction modes depending on a respective ability of the corresponding portion of storage cells to store data without error. Groups of storage cells that are less prone to failures (i.e., loss of data) are assigned a first error correction mode in which a first length error correction code is used to generate error correction information for a given sized segment of data. Groups of storage cells that are more prone to failures are assigned a second error correction mode in which a second length error correction code is used to generate error correction information for the given sized segment of data.

Abstract: Embodiments of apparatus, methods, storage drives, computer-readable media, systems and devices are described herein for identification of die of non-volatile memory for use in remedial action. In various embodiments, a first block may be configured to encode data to be stored in a non-volatile memory as a codeword. In various embodiments, the first block may be configured to store respective portions of the codeword in a distributed manner across a plurality of die of the non-volatile memory. In various embodiments, the first block may be configured to generate respective error detection codes for the plurality of die.

Abstract: Methods, apparatuses, and systems are described related to memory controllers for memory. In one embodiment, a memory controller may include a distribution transformer configured to receive data to be stored into a memory, wherein the data has a distribution of m1:n1 ratio for bits having a first logic value and bits having a second logic value, where m1 and n1 are real numbers. The distribution transformer may transform the data into skewed data, wherein the skewed data has a distribution of m2:n2 ratio for bits having the first logic value and bits having the second logic value, where m2 and n2 are real numbers that are different from one another and respectively differ from m1 and n1. The distribution transformer may output the skewed data for storage in the memory. Other embodiments may be described and claimed.

Abstract: Provided are an apparatus, system, and method for performing an error recovery operation with respect to a read of a block of memory cells in a storage device. A current iteration of a decoding operation is performed by applying at least one reference voltage for the current iteration to a block of the memory cells in the storage device to determine current read values in response to applying the reference voltage. A symbol is generated for each of the read memory cells by combining the determined current read value with at least one value saved during the previous iteration. The symbols are used to determine bit reliability metrics for the block of memory cells. The bit reliability metrics are decoded. In response to the decoding failing, an additional iteration of the decoding operation is performed.

Abstract: Methods, apparatuses, and systems related to use of error correction pointers (ECPs) to handle hard errors in memory are described herein. In embodiments, a read module of a memory controller may read a codeword stored in a memory. The read module may determine a number of hard errors in the codeword. Responsive to a determination that the number of hard errors exceeds a threshold, the read module may store ECP information associated with the hard errors. The read module may include an error correction code (ECC) module to perform an ECC process on the codeword. The read module may use the ECP information to decode the codeword to recover the data responsive to a determination that the ECC process failed. Other embodiments may be described and claimed.

Abstract: Embodiments include methods, apparatuses, and instructions for encoding a codeword of data as codeword portions stored across multiple die in a non-volatile memory. Embodiments further include a decoder which may be configured to decode the portions of the codeword using hard decision reads. The decoder may then be configured to estimate the quality of each die, and apply a scaling factor to the decoded codeword portions such that confidence or reliability information can be determined for the codeword.

Abstract: Apparatus, systems, and methods to manage NAND memory are described. In one embodiment, a memory controller logic is configured to apply a binary parity check code to a binary string and convert the binary string to a ternary string.

Abstract: Embodiments include systems, methods, and apparatuses for reading the signal-level of three-signal-level cells in a non-volatile memory (NVM). In one embodiment, a receiver may be configured to receive a serial string of values and identify which values in the string are the results of a lower-page read or an upper-page read of the cells. In some embodiments, one signal-level of a three-signal level cell may be represented only by a value in the lower-page read of the cells, while a second signal-level of the three-signal level cell may be represented by a value in the lower-page read of the cells and an upper-page read of the cells.

Abstract: Embodiments include device, storage media, and methods for decoding a codeword of encoded data. In embodiments, a processor may be coupled with a decoder and configured to multiply the codeword and a parity-check matrix of the encoded data to produce a syndrome. If the syndrome is non-zero then the processor may identify a bit error in the codeword based at least in part on a comparison of the syndrome to one or more columns of the parity-check matrix. Other embodiments may be described and claimed.

Abstract: Embodiments include systems, methods, and apparatuses to estimate respective first and second cumulative density functions (CDFs) for values of a plurality of non-volatile memory (NVM) cells in a page of memory. The CDFs may be based at least in part on one or more decoder outputs of codewords for data stored in the page. Based at least in part on the CDFs, first and second probability density functions (PDFs) may be estimated for the values of the page of memory. A center read reference voltage may then be determined for reading a cell in the page. The center read reference voltage may be based at least in part on the first and second PDFs.

Abstract: Embodiments include methods, apparatuses, and instructions for encoding a codeword of data as codeword portions stored across multiple die in a non-volatile memory. Embodiments further include a decoder which may be configured to decode the portions of the codeword using hard decision reads. The decoder may then be configured to estimate the quality of each die, and apply a scaling factor to the decoded codeword portions such that confidence or reliability information can be determined for the codeword.

Abstract: Embodiments of apparatus, methods, storage drives, computer-readable media, systems and devices are described herein for identification of die of non-volatile memory for use in remedial action. In various embodiments, a first block may be configured to encode data to be stored in a non-volatile memory as a codeword. In various embodiments, the first block may be configured to store respective portions of the codeword in a distributed manner across a plurality of die of the non-volatile memory. In various embodiments, the first block may be configured to generate respective error detection codes for the plurality of die.

Abstract: Embodiments include systems, methods, and apparatuses to estimate respective first and second cumulative density functions (CDFs) for values of a plurality of non-volatile memory (NVM) cells in a page of memory. The CDFs may be based at least in part on one or more decoder outputs of codewords for data stored in the page. Based at least in part on the CDFs, first and second probability density functions (PDFs) may be estimated for the values of the page of memory. A center read reference voltage may then be determined for reading a cell in the page. The center read reference voltage may be based at least in part on the first and second PDFs.

Abstract: Embodiments of the present disclosure describe apparatus, methods, computer-readable media and system configurations for dividing error correcting code (“ECC”) codewords into portions and storing the portions among multiple memory components. For example, a device may include non-volatile memory (“NVM”) including m die. A memory controller may be configured to store portions of an ECC codeword among the m die. In various embodiments, a memory controller and/or an iterative decoder such as a low-density parity-check (“LDPC”) decoder may be configured to decode ECC codewords based at least in part on reliability metrics associated with the m die. Other embodiments may be described and/or claimed.

Abstract: Apparatus, systems, and methods manage NAND memory are described. In one embodiment, an apparatus comprises a memory controller logic to apply a binary parity check code to a binary string and convert the binary string to a ternary string. Other embodiments are also disclosed and claimed.

Abstract: Examples are disclosed for techniques associated with protecting system critical data written to non-volatile memory. In some examples, system critical data may be written to a non-volatile memory using a first data protection scheme. User data that includes non-system critical data may also be written to the non-volatile memory using a second data protection scheme. For these examples, both data protection schemes may have a same given data format size. Various examples are provided for use of the first data protection scheme that may provide enhanced protection for the system critical data compared to protection provided to user data using the second data protection scheme. Other examples are described and claimed.

Abstract: An apparatus, system, and method for generating and decoding a longer linear block codeword using a shorter block length. The method comprises receiving data from a storage area and generating a codeword from the received data with an encoder, the codeword having a data portion and a parity portion, wherein the codeword has a first block length, and wherein the encoder applies a linear block code, the linear block code having a second block length that is shorter than the first block length.

Abstract: Embodiments of the present disclosure describe device, methods, computer-readable media and system configurations for decoding codewords using a side channel. In various embodiments, a memory controller may be configured to determine that m of n die of non-volatile memory (“NVM”) have failed iterative decoding. In various embodiments, the memory controller may be further configured to generate a side channel from n-m non-failed die and the m failed die other than a first failed die. In various embodiments, the memory controller may be further configured to reconstruct, using iterative decoding, a codeword stored on the first failed die of the m failed die based on the generated side channel and on soft input to an attempt to iteratively decode data stored on the first failed die. In various embodiments, the iterative decoding may include low-density parity-check decoding. Other embodiments may be described and/or claimed.