Abstract: High-temperature-stable polybenzoxazoles are formed from novel poly-o-hydroxyamides. The novel poly-o-hydroxyamides have low dielectric constants, are suitable for exposure at 248 nm or shorter wavelengths, and have hydroxyl groups at least some of which have been protected by tert-butoxycarbonyl protective groups.

Abstract: The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.

Abstract: The present invention describes the use of polybenzoxazoles (PBOs) for adhesively bonding articles or materials, especially components used in the semiconductor industry, such as chips and wafers, a process for adhesively bonding materials, especially chips and wafers, chip and/or wafer stacks produced by the process, and adhesive compositions which comprise the polybenzoxazoles of the formula (I).

Abstract: The present invention provides a process for wiring electrical contact sites, in particular on the surface of an electronic or microelectronic component, with the following steps: applying and patterning at least one dielectric on the component surface; currentlessly depositing a conductor starting layer for producing metal wiring interconnects and substitute contact sites with short-circuit contacts for interconnecting the individual metal wiring interconnects and the corresponding electrical contact sites; reinforcing the conductor starting layer by a common electrodepositing process; and separating the short-circuit contacts for separating the electrical contact sites or the contact sites of the wiring from one another.

Abstract: The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of: a. applying a layer of a dielectric (2) which is to be patterned to a substrate (1); b. patterning the dielectric layer (2) which has been applied; c. applying a conductor metal (3) for the patterned dielectric layer (2) and forming a common surface from the conductor metal (3) and the dielectric (2); d. applying a layer of an organic dielectric (4) to the layer produced in step c.; and e. bringing the coated substrate produced in this way into contact with a fluorine-containing compound in order to form an arrangement which has air as dielectric between conductor structures and has a continuous dielectric layer (4) on the top side, and to a semiconductor device with air layers as dielectric produced using this process.

Abstract: The invention relates to a layer arrangement and to a process for producing a layer arrangement. The layer arrangement has a layer which is arranged on a substrate and includes a first subregion comprising decomposable material and a second subregion which is arranged next to the first subregion and has a useful structure comprising a non-decomposable material. Furthermore, the layer arrangement has a covering layer on the layer comprising decomposable material and the useful structure, the layer arrangement being designed in such a manner that the decomposable material can be removed from the layer arrangement.

Abstract: Novel dicarboxylic acids are described herein that are suitable for the preparation of high-temperature-stable polymers, which are particularly useful in forming suitable dielectrics in microelectronics.

Abstract: Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

Abstract: A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer.

Abstract: The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.

Abstract: Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.

Abstract: A photosensitive formulation for high-temperature-resistant photoresists is based on polyhydroxyamides. The photosensitive formulations display a much higher photosensitivity than the comparable formulations based on quinone azide photoactive components. After conversion to the polybenzoxazole, the novel formulations also display a lower dielectric constant than the quinone azide-based formulations. A film can be made by applying the photosensitive formulation to a wafer and then evaporating the solvent. A method for fabricating electronics and micorelectronics structures a wafer by using the film in photolithography.

Abstract: Bis-o-aminophenols, which carry on at least one of their hydroxyl groups a tert-butoxy-carbonyl group, can be reacted with dicarboxylic acids to give the corresponding poly-o-hydroxyamides. Following cyclization to the polybenzoxazole, these polymers have a lower dielectric constant than compounds prepared from corresponding poly-o-hydroxyamides which do not carry any tert-butoxycarbonyl group.

Abstract: A bis-o-aminophenol has a formula I These bis-o-aminophenols permit the preparation of polybenzoxazoles stabilized at high temperatures. The bis-o-aminophenols are preferably prepared from the corresponding diols, which are first nitrosated. The nitroso compound is then reduced to the amino compound by hydrogenation with Pd/C and H2.

Abstract: Production of a porous layer includes using a composition which includes a first polymer component and a second polymer component, the first polymer component being polyhydroxyamide and/or polybenzoxazole and stable at a temperature at which the second polymer component decomposes and volatilizes. If the composition is heated to the decomposition temperature of the second polymer component, the second component volatilizes and a porous layer that contains the first component remains.

Abstract: A layer-forming antireflective composition is proposed which contains as a base polymer poly(hydroxyamide) or polybenzoxazole and as dye component at least one dye from the classes of the methine dyes, methine dye derivatives, azomethine dyes, azomethine dye derivatives, coumarin dyes, coumarin dye derivatives, triphenylmethane dyes, triphenylmethane dye derivatives and/or an azo dye.

Abstract: There are disclosed polybenzoxazole precursors which can be processed by centrifugal techniques, which can be cyclized to polybenzoxazoles on substrates without difficulty, and which after cyclization to polybenzoxazoles exhibit a high temperature stability. In particular, these precursors and the polybenzoxazoles prepared from them possess high resistance against the diffusion of metals.

Abstract: The following invention relates to phenyl-linked polybenzoxazoles having terminal, aryl- or heteroaryl-attached cyanate groups which can be used for adhesive bonding and as dielectrics, especially for electronic components, and to a process for preparing them.

Abstract: Novel poly-o-hydroxyamides can be cyclized to give polybenzoxazoles which have a good diffusion barrier effect with respect to metals. The poly-o-hydroxyamides can be applied to a semiconductor substrate by customary techniques and converted into the polybenzoxazole in a simple manner by heating. This results in a good barrier layer with respect to diffusion of metals. This allows the diffusion barrier between conductor track and dielectric to be substantially dispensed.

Abstract: The present invention describes the use of poly-o-hydroxy amides (PHAs) for adhesively bonding articles or materials, especially components used in the semiconductor industry, such as chips and wafers, a process for adhesively bonding materials, especially chips and/or wafers, chip and/or wafer stacks produced by the process, and adhesive compositions which comprise the poly-o-hydroxy amides of the formula (I).