Abstract: The invention relates to novel o-aminophenolcarboxylic acids, and o-aminothiophenolcarboxylic acids of the following structure: ##STR1## where A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3, where at least one of the radicals A.sup.1 to A.sup.3 must be F or an F-containing group; T is O or S, and m is 0 or 1; and Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: UV-hardenable and thermally hardenable epoxy resins for the underfilling process in electrical and electronic components are provided. A new casting resin component has an increased storage stability at room temperature of at least 6 months and improved characteristics for the underfilling process including faster hardening and lower viscosity. Filler material with a maximum grain size of 20 .mu.m and a siloxane component are provided in addition to the casting resin formulation.

Abstract: The invention relates to novel o-aminophenolcarboxylic acids, and o-aminothiophenolcarboxylic acids of the following structure: ##STR1## where A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3, where at least one of the radicals A.sup.1 to A.sup.3 must be F or an F-containing group; T is O or S, and m is 0 or 1; and Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 and R.sup.2 is CN or NO.sub.2.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure: ##STR1## where D=O, S, or NH, and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 through R.sup.5 is F or CF.sub.3.

Abstract: In a method of synthesis of polybenzoxazole and polybenzothiazole precursors, a dicarboxylic acid or a dicarboxylaic acid ester is reacted with a bis-o-aminophenol or bis-o-aminothiophenol in a suitable solvent in the presence of an activating reagent having the following structure: ##STR1##

Abstract: The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert-butyl ester or tert-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulfonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, exposed in an imaging manner, subjected to a temperature treatment in the range between 120.degree. and 150.degree. C. for a period of 100 to 600 seconds, and wet-developed (single-layer resist system). The invention also concerns a method in which a corresponding two-layer resist system is used.

Abstract: In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure:M--CO--R*--CO--Mwhere M stands for the residue of an (optionally substituted) 2-hydroxybenzoxazole, 2-hydroxybenzothiazole, or 1-hydroxybenzotriazole or of corresponding mercapto compounds and R* is the parent body of the dicarboxylic acid.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid ester with the following structure:G--O--CO--R*--CO--O--G,where G is an (optionally substituted) succinimide or maleinimide group and R* is the parent body of the dicarboxylic acid.

Abstract: A method for producing poly-o-hydroxy amides by conversion of an activated dicarboxylic acid derivative with a bis-o-aminophenol. A solution of the activated dicarboxylic acid derivative is added to a solution of the bis-o-aminophenol in a lactone, and a tertiary amine is added to the resulting mixture, wherein the lactone has the following structure: ##STR1## where A is--(CR.sup.1 R.sup.2).sub.m --or--(CR.sup.3 R.sup.4).sub.n --NR.sup.5 --,R.sup.1 to R.sup.5 are independent of one anotherR.sup.1 and R.sup.2 are hydrogen, alkyl with 1 to 7 carbon atoms (linear or branched), --CO(CH.sub.2).sub.p CH.sub.3, or --COO(CH.sub.2).sub.p CH.sub.3, with p=0 or 1,R.sup.3 and R.sup.4 are hydrogen or alkyl with 1 to 3 carbon atoms (linear or branched),R.sup.5 is hydrogen or methyl,m is a whole number from 2 to 11, andn is a whole number from 1 to 3.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted at a temperature of .ltoreq.0.degree. C. with a mixed dianhydride of a dicarboxylic acid and a sulfonic acid with the following structure:E--SO.sub.2 --O--CO--R*--CO--O--SO.sub.2 --Ewhere E is an (optionally substituted) methyl, phenyl, or naphthyl group and R* is the parent body of the dicarboxylic acid.

Abstract: A method for producing poly-o-hydroxy amides by heating a dicarboxylic acid to a temperature .gtoreq.80.degree. C., together with a sulfonic acid chloride and a tertiary amine in a suitable solvent, to form a reaction mixture and reacting the mixture obtained with a bis-o-aminophenol solution at a temperature <80.degree. C.

Abstract: A dry-developable, positively acting TSI resist contains the following components:a suitable solvent,a strong acid former as the photoactive component, anda base polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic unit and glycidyl methacrylate and/or a styrene derivative as a further basic unit, and possibly an additive.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and the groups R.sup.1 through R.sup.4 are H, F, CH.sub.3, or CF.sub.3 (with a maximum of two CH.sub.3 or CF.sub.3 groups).

Abstract: Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-hydroxyamide or a bis-o-mercaptoamide is reacted with a dihydroxy compound in the presence of a basic catalyst.

Abstract: Methods for producing solutions of polybenzoxazol precursors that are soluble in alkali and resist solutions based on such precursors. A dicarboxylic acid halogenide is reacted with a bis-(o-aminophenol) in an organic solvent and in the presence of a polymer with a tertiary N atom, which is insoluble in the solvent. Excess polymer and hydrohalogenide are separated from the reaction solution. The reaction solution is optionally mixed with a photoactive component.

Abstract: New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.