Abstract: The novel photo-cross-linkable polymers are suitable as coating materials. The photo-cross-linkable polymers contain a biphenylene unit, which can be dimerized by exposure. Attached to the biphenyl unit are side chains of a polymer with a high temperature resistance and a high chemical stability. Through exposure, the biphenylene units dimerize, whereby the polymers are spatially cross-linked.

Abstract: A layer-forming antireflective composition is proposed which contains as a base polymer poly(hydroxyamide) or polybenzoxazole and as dye component at least one dye from the classes of the methine dyes, methine dye derivatives, azomethine dyes, azomethine dye derivatives, coumarin dyes, coumarin dye derivatives, triphenylmethane dyes, triphenylmethane dye derivatives and/or an azo dye.

Abstract: Production of a porous layer includes using a composition which includes a first polymer component and a second polymer component, the first polymer component being polyhydroxyamide and/or polybenzoxazole and stable at a temperature at which the second polymer component decomposes and volatilizes. If the composition is heated to the decomposition temperature of the second polymer component, the second component volatilizes and a porous layer that contains the first component remains.

Abstract: The present invention provides a process for wiring electrical contact sites, in particular on the surface of an electronic or microelectronic component, with the following steps: applying and patterning at least one dielectric on the component surface; currentlessly depositing a conductor starting layer for producing metal wiring interconnects and substitute contact sites with short-circuit contacts for interconnecting the individual metal wiring interconnects and the corresponding electrical contact sites; reinforcing the conductor starting layer by a common electrodepositing process; and separating the short-circuit contacts for separating the electrical contact sites or the contact sites of the wiring from one another.

Abstract: A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

Abstract: The invention relates to a process for the metallization of an insulator and/or a dielectric, wherein the insulator is firstly activated, it is subsequently coated with another insulator and the latter is patterned, then the first is seeded and lastly metallized.

Abstract: The present invention relates to a process for producing a porous layer adhering to a substrate, which comprises the steps:

Abstract: The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure in which: A1 to A7 are—independently of one another—H, CH3, OCH3, CH2CH3 or OCH2CH3; T is O or S, and m is 0 or 1; Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: There are disclosed polybenzoxazole precursors which can be processed by centrifugal techniques, which can be cyclized to polybenzoxazoles on substrates without difficulty, and which after cyclization to polybenzoxazoles exhibit a high temperature stability. In particular, these precursors and the polybenzoxazoles prepared from them possess high resistance against the diffusion of metals.

Abstract: Bis-o-aminophenols and o-aminophenolcarboxylic acids have the following structures: 1

Abstract: The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure 1

Abstract: The invention relates to novel o-nitrophenol derivatives and o-nitrothiophenol derivatives of the following structure: where: A1 to A3 are—independently of one another—H, F, CH3, CF3, OCH3, OCF3, CH2CH3, CF2CF3, OCH2CH3 or OCF2CF3; T is O or S; R is an aliphatic or araliphatic radical; and R* is H or R.

Abstract: The invention relates to a process for metallizing at least one insulating layer of a component. A plurality of levels are exposed for metallization by patterning and forming connections between the insulating layers.

Abstract: The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure in which: A1 to A7 are—independently of one another—H, CH3, OCH3, CH2CH3 or OCH2CH3; T is O or S, and m is 0 or 1; Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: UV-hardenable and thermally hardenable epoxy resins for the underfilling process in electrical and electronic components are provided. A new casting resin component has an increased storage stability at room temperature of at least 6 months and improved characteristics for the underfilling process including faster hardening and lower viscosity. Filler material with a maximum grain size of 20 &mgr;m and a siloxane component are provided in addition to the casting resin formulation.

Abstract: The invention relates to novel bis-o-aminophenols, and bis-o-aminothiophenols of the following structure: ##STR1## where A.sup.1 to A.sup.3 are--independently of one another--H, CH.sub.3, OCH.sub.3, CH.sub.2 CH.sub.3, or OCH.sub.2 CH.sub.3T is O or S, andZ is a carbocyclic or heterocyclic aromatic radical.

Abstract: The polybenzoxazole and polybenzothiazole precursors of the invention have the following partial structure: ##STR1## where: A.sup.1 to A.sup.6 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.3 CF.sub.3 ;T is O or S, and m is 1;Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: The invention relates to novel bis-o-aminophenols, and bis-o-aminothiophenols of the following structure: ##STR1## where A.sup.1 to A.sup.6 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3, where at least one of the radicals A.sup.1 to A.sup.6 must be F or an F-containing group; T is O or S, and m is 0 or 1; and Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: The polybenzoxazole and polybenzothiazole precursors of the invention have the following partial structure: ##STR1## where: A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3 ;T is O or S, and m is 1;Z is a carbocyclic or heterocyclic aromatic radical.

Abstract: A photoresist suitable for the production of structures in the submicron range contains the following components:a polymer component with carboxylic acid anhydride functions and carboxylic acid tert. butyl ester groupsa photoinitiator which releases an acid when exposed anda suitable solvent.