Patents by Inventor Ren Wang

Ren Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11362968
    Abstract: Technologies for dynamically managing a batch size of packets include a network device. The network device is to receive, into a queue, packets from a remote node to be processed by the network device, determine a throughput provided by the network device while the packets are processed, determine whether the determined throughput satisfies a predefined condition, and adjust a batch size of packets in response to a determination that the determined throughput satisfies a predefined condition. The batch size is indicative of a threshold number of queued packets required to be present in the queue before the queued packets in the queue can be processed by the network device.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: June 14, 2022
    Assignee: Intel Corporation
    Inventors: Ren Wang, Mia Primorac, Tsung-Yuan C. Tai, Saikrishna Edupuganti, John J. Browne
  • Publication number: 20220179805
    Abstract: Examples include a computing system having a direct memory access (DMA) engine pipeline, a plurality of processing cores, each processing core including a core pipeline, and a memory coupled to the DMA engine pipeline and the plurality of processing cores. The computing system includes a pipeline selector coupled to the plurality of processing cores and the DMA engine pipeline, the pipeline selector to, during initialization, determine at least one threshold for pipeline selection for the computing system, and during runtime, select one of the core pipelines or the DMA engine pipeline to execute a memory copy operation in the memory based at least in part on the at least one threshold.
    Type: Application
    Filed: June 21, 2019
    Publication date: June 9, 2022
    Inventors: Jiayu HU, Ren WANG, Cunming LIANG
  • Patent number: 11355399
    Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Huan-Just Lin, Fu-Sheng Li, Tsai-Jung Ho, Bor Chiuan Hsieh, Guan-Xuan Chen, Guan-Ren Wang
  • Patent number: 11355637
    Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Feng Fu, Guan-Ren Wang, Yun-Min Chang, Yu-Lien Huang
  • Patent number: 11355626
    Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: June 7, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20220157814
    Abstract: A semiconductor device includes a substrate having a P-type device region and an N-type device region, wherein the P-type device region includes germanium dopants. A first gate oxide layer is formed on the P-type device region and a second gate oxide layer is formed on the N-type device region. The first gate oxide layer and the second gate oxide layer are formed through a same oxidation process. The first gate oxide layer includes nitrogen dopants and the second gate oxide layer does not include the nitrogen dopants.
    Type: Application
    Filed: December 22, 2020
    Publication date: May 19, 2022
    Inventors: Shi-You Liu, Ming-Shiou Hsieh, Zih-Hsuan Huang, Tsai-Yu Wen, Yu-Ren Wang
  • Patent number: 11327894
    Abstract: Method and system for performing data movement operations is described herein. One embodiment of a method includes: storing data for a first memory address in a cache line of a memory of a first processing unit, the cache line associated with a coherency state indicating that the memory has sole ownership of the cache line; decoding an instruction for execution by a second processing unit, the instruction comprising a source data operand specifying the first memory address and a destination operand specifying a memory location in the second processing unit; and responsive to executing the decoded instruction, copying data from the cache line of the memory of the first processing unit as identified by the first memory address, to the memory location of the second processing unit, wherein responsive to the copy, the cache line is to remain in the memory and the coherency state is to remain unchanged.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: May 10, 2022
    Assignee: Intel Corporation
    Inventors: Anil Vasudevan, Venkata Krishnan, Andrew J. Herdrich, Ren Wang, Robert G. Blankenship, Vedaraman Geetha, Shrikant M. Shah, Marshall A. Millier, Raanan Sade, Binh Q. Pham, Olivier Serres, Chyi-Chang Miao, Christopher B. Wilkerson
  • Publication number: 20220138156
    Abstract: Methods, apparatus, systems, and articles of manufacture providing a tiered elastic cloud storage to increase data resiliency are disclosed.
    Type: Application
    Filed: November 8, 2021
    Publication date: May 5, 2022
    Inventors: Ren Wang, Christian Maciocco, Kshitij Doshi, Francesc Guim Bernat, Ned Smith, Satish Jha, Vesh Raj Sharma Banjade, S M Iftekharul Alam
  • Patent number: 11321182
    Abstract: Embodiments of the present disclosure relate to a data backup method, a data backup device, and a computer program product. The method comprises: receiving a request for backing up stored data; determining a backup requirement based on the request, the backup requirement comprising a requirement with respect to processing backup data of the stored data in a backup system; and determining a backup operation for processing the backup data based on the backup requirement.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: May 3, 2022
    Assignee: EMC IP Holding Company LLC
    Inventors: Weiyang Liu, Mengze Liao, Qi Wang, Ren Wang, Ming Zhang
  • Publication number: 20220130961
    Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.
    Type: Application
    Filed: January 10, 2022
    Publication date: April 28, 2022
    Inventors: I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chun-An Lin, Wei-Yuan Lu, Guan-Ren Wang, Peng Wang
  • Publication number: 20220114270
    Abstract: Examples described herein relate to offload circuitry comprising one or more compute engines that are configurable to perform a workload offloaded from a process executed by a processor based on a descriptor particular to the workload. In some examples, the offload circuitry is configurable to perform the workload, among multiple different workloads. In some examples, the multiple different workloads include one or more of: data transformation (DT) for data format conversion, Locality Sensitive Hashing (LSH) for neural network (NN), similarity search, sparse general matrix-matrix multiplication (SpGEMM) acceleration of hash based sparse matrix multiplication, data encode, data decode, or embedding lookup.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Inventors: Ren WANG, Sameh GOBRIEL, Somnath PAUL, Yipeng WANG, Priya AUTEE, Abhirupa LAYEK, Shaman NARAYANA, Edwin VERPLANKE, Mrittika GANGULI, Jr-Shian TSAI, Anton SOROKIN, Suvadeep BANERJEE, Abhijit DAVARE, Desmond KIRKPATRICK
  • Patent number: 11301141
    Abstract: Embodiments of the present disclosure provide a storage management method, an electronic device, and a computer program product. The method includes: determining, in a storage device set, a plurality of candidate subsets of storage devices used for data backup, wherein the plurality of candidate subsets include substantially the same number of storage devices. The method further includes: determining global balance degrees respectively corresponding to the plurality of candidate subsets, wherein the global balance degree indicates a usage balance degree of the storage device set when storage devices in a corresponding candidate subset are used for data backup. The method further includes: determining a target subset of storage devices for data backup in the plurality of candidate subsets based on the global balance degrees.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: April 12, 2022
    Assignee: EMC IP Holding Company LLC
    Inventors: Qi Wang, Zhen Jia, Yun Zhang, Ren Wang, Jing Yu
  • Patent number: 11297413
    Abstract: Embodiments of the present disclosure provide an inverter vent and a loudspeaker having the same. Preferably, air flows within the inverted vent in a 360 degrees full-circumferential direction. This design can improve the efficiency of the loudspeaker, reduce the wind noise, and increase the bass ductility.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: April 5, 2022
    Assignee: Wistron Corporation
    Inventors: Yao-Wei Wang, Li-Ping Pan, Ting-Yao Cheng, Hsin-Chi Chen, Li-Ren Wang, Jing-Hong Lu, Fei-Ta Chen, Ya-Shian Huang, Wei-Ting Chen
  • Patent number: 11291223
    Abstract: A method of preparing the instant whole wheat crisps includes: using whole wheat grains as raw materials, fully soaking the whole wheat grains to make the whole wheat grains absorb water until saturating, and then performing cooking, extruding, sheeting, and microwave vacuum drying to obtain the instant whole wheat crisps. In the present disclosure, no artificial additive is added in the processing process, and the wheat grains are extruded and dried at a low temperature, which conforms to the current trend of “clean label” foods. Moreover, the whole wheat grains are processed into crisps, which are unadulterated whole wheat foods and conforms to the current trend of whole grains.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: April 5, 2022
    Assignee: JIANGNAN UNIVERSITY
    Inventors: Xing Zhou, Wanglu Bao, Zhengyu Jin, Jianwei Zhao, Jinpeng Wang, Tingting Meng, Ren Wang
  • Publication number: 20220089434
    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.
    Type: Application
    Filed: December 6, 2021
    Publication date: March 24, 2022
    Inventors: Yi-Ren Wang, Shing-Chyang Pan, Yuan-Chih Hsieh
  • Publication number: 20220093778
    Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.
    Type: Application
    Filed: November 22, 2020
    Publication date: March 24, 2022
    Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11283723
    Abstract: Technologies for managing a single-producer and single-consumer ring include a producer of a compute node that is configured to allocate data buffers, produce work, and indicate that work has been produced. The compute node is configured to insert reference information for each of the allocated data buffers into respective elements of the ring and store the produced work into the data buffers. The compute node includes a consumer configured to request the produced work from the ring. The compute node is further configured to dequeue the reference information from each of the elements of the ring that correspond to the portion of data buffers in which the produced work has been stored, and set each of the elements of the ring for which the reference information has been dequeued to an empty (i.e., NULL) value. Other embodiments are described herein.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: March 22, 2022
    Assignee: Intel Corporation
    Inventors: Jiayu Hu, Cunming Liang, Ren Wang, Jr-Shian Tsai, Jingjing Wu, Zhaoyan Chen
  • Publication number: 20220083434
    Abstract: Implementations of the present disclosure provide a method for backup destination selection, an electronic device, and a computer program product. In one method, in a storage device set, a first group of candidate subsets is obtained, and the number of storage devices included in candidate subsets in the first group of candidate subsets is determined based on the number of copies specified by a backup task. A first group of subset codes of the first group of candidate subsets is determined. A second group of subset codes is generated according to the first group of subset codes, and codes in the second group of subset codes uniquely identify the candidate subsets. Based on the first group of candidate subsets and a second group of candidate subsets corresponding to the second group of subset codes, a target subset is selected as a backup destination of the backup task.
    Type: Application
    Filed: October 23, 2020
    Publication date: March 17, 2022
    Inventors: Ren Wang, Zhen Jia, Jing Yu, Qi Wang, Yun Zhang
  • Publication number: 20220083431
    Abstract: Implementations of the present disclosure provide a method, an electronic device, and a computer program product for selecting a backup destination. One method includes: receiving device information about storage devices in a storage device set, wherein a backup task is executed in the storage device set; receiving backup information about the backup task; acquiring a destination association relationship, wherein the destination association relationship describes an association relationship between a reference backup task in a reference storage device set and a reference backup destination of the reference backup task, the reference backup destination including a group of storage devices in a reference storage system; and selecting a backup destination for the backup task from the storage device set according to the destination association relationship and based on the device information and the backup information, the backup destination including a group of storage devices in the storage device set.
    Type: Application
    Filed: October 16, 2020
    Publication date: March 17, 2022
    Inventors: Zhen Jia, Qi Wang, Yun Zhang, Ren Wang, Jing Yu
  • Patent number: 11275655
    Abstract: Implementations of the present disclosure provide a method, an electronic device, and a computer program product for selecting a backup destination. One method includes: receiving device information about storage devices in a storage device set, wherein a backup task is executed in the storage device set; receiving backup information about the backup task; acquiring a destination association relationship, wherein the destination association relationship describes an association relationship between a reference backup task in a reference storage device set and a reference backup destination of the reference backup task, the reference backup destination including a group of storage devices in a reference storage system; and selecting a backup destination for the backup task from the storage device set according to the destination association relationship and based on the device information and the backup information, the backup destination including a group of storage devices in the storage device set.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: March 15, 2022
    Assignee: EMC IP Holding Company LLC
    Inventors: Zhen Jia, Qi Wang, Yun Zhang, Ren Wang, Jing Yu