Patents by Inventor Richard Francis

Richard Francis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7194353
    Abstract: A method and system or determining a flight path for an aircraft between an initial point and a destination point are described. An airspace is divide into a set of grid cells, and a flight path is established between the initial point and the destination point. A cumulative threat risk value for each of the grid cells is calculated, and an allowable threat risk per grid cell is established based on a rule set. An intermediate point from which to deviate the flight path is identified based upon an analysis of the cumulative threat risk values of the grid cells, if the threat risk value of any of the grid cells intersecting the flight path exceeds the allowable threat risk. A deviation from the intermediate point to a new intermediate point is determined such that the new intermediate point has a cumulative threat risk value lower than or equal to the allowable threat risk per grid cell.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: March 20, 2007
    Assignee: Gestalt, LLC
    Inventors: Richard Baldwin, Richard Francis Long
  • Publication number: 20070034941
    Abstract: An increased conductivity deep diffusion of the same conductivity type as that of the drift region is provided between adjacent trenches of a trench type IGBT and below the trenches to reduce the on resistance components of the drift region resistance and spreading resistance to current flow when the device is turned on. The deep diffusion has a higher concentration than that of the drift region, and has a width of from 4 to 10 microns. The wafer or die has a total width (or thickness) of about 70 to about 300 microns.
    Type: Application
    Filed: August 15, 2005
    Publication date: February 15, 2007
    Inventors: Richard Francis, Chiu Ng
  • Publication number: 20070026577
    Abstract: A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less than about 2.5 microns. A P+ transparent collector region about 0.5 microns deep is formed in the bottom of the damaged region by a boron implant. A collector contact of Al/Ti/NiV and Ag is sputtered onto the collector region and is annealed at 200° C. to 400° C. for 30 to 60 minutes. A pre-anneal step before applying the collector metal can be carried out in vacuum at 300° C. to 400° C. for 30 to 60 seconds.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 1, 2007
    Inventors: Richard Francis, Chiu Ng
  • Patent number: 7127407
    Abstract: A comprehensive set of risk groups explicitly identifies groups of individuals with multiple interacting co-morbid conditions, and which explicitly identifies the severity of illness level. This allows accurate prediction of future health care resource needs of an entire population, while simultaneously helping the health care provider isolate problems to identify changes in care to reduce costs and improve quality.
    Type: Grant
    Filed: April 29, 1999
    Date of Patent: October 24, 2006
    Assignee: 3M Innovative Properties Company
    Inventors: Richard Francis Averill, Jon Eisenhandler, Norbert Israel Goldfield
  • Patent number: 7044705
    Abstract: A load handling machine includes a body, a lifting arm pivotally mounted to the body about a first pivot axis, and a load handling implement pivotally mounted to the lifting arm about a second pivot axis. A first actuator provides movement about the first axis, and a second actuator provides movement about the second axis. A displacement device is mounted on the body and the lifting and includes a pair of cylinders. The second actuator and the displacement device are interconnected such that as the lifting arm is lowered, fluid ejected from one of the pair of cylinders of the displacement device is fed to an annulus side of the second actuator, and as the lifting arm is raised, fluid is ejected from annulus sides of both of the cylinders of the displacement device and is fed to a non-annulus side of the second actuator.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: May 16, 2006
    Assignee: J.C. Bamford Excavators Limited
    Inventor: Richard Francis Way
  • Publication number: 20060094179
    Abstract: The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.
    Type: Application
    Filed: December 8, 2005
    Publication date: May 4, 2006
    Inventors: Richard Francis, Chiu Ng, Hamilton Lu, Ranadeep Dutta
  • Patent number: 7020702
    Abstract: A method of obtaining information from a networked device is provided. The method includes the steps of defining a network; providing a network adapter communicatively connected to the network, the network adapter connected to the networked device; providing memory in the network adapter; updating information in the memory, wherein the information describes a status of the networked device; placing the information into a response frame; and sending the response frame in response to any command frame received by the network adapter.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: March 28, 2006
    Assignee: Lexmark International, Inc.
    Inventors: Heather Laudan Clark, Mark Walter Fagan, Richard Francis Russell, Michael Ray Timperman, Jason Eric Waldeck, Charles Thomas Wolfe
  • Patent number: 7005702
    Abstract: The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.
    Type: Grant
    Filed: May 5, 2000
    Date of Patent: February 28, 2006
    Assignee: International Rectifier Corporation
    Inventors: Richard Francis, Chiu Ng, Hamilton Lu, Ranadeep Dutta
  • Publication number: 20050227461
    Abstract: A semiconductor device is formed in a thin float zone wafer. Junctions are diffused into the top surface of the wafer and the wafer is then reduced in thickness by removal of material from its bottom surface. A weak collector is then formed in the bottom surface by diffusion of boron (for a P type collector). The weak collector is then formed or activated only over spaced or intermittent areas. This is done by implant of the collector impurity through a screening mask; or by activating only intermittent areas by a laser beam anneal in which the beam is directed to anneal only preselected areas. The resulting device has an effective very low implant dose, producing a reduced switching energy and increased switching speed, as compared to prior art weak collector/anodes and life time killing technologies.
    Type: Application
    Filed: June 2, 2005
    Publication date: October 13, 2005
    Inventors: Richard Francis, Chiu Ng
  • Publication number: 20050212039
    Abstract: An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
    Type: Application
    Filed: May 24, 2005
    Publication date: September 29, 2005
    Inventors: Richard Francis, Chiu Ng
  • Patent number: 6919248
    Abstract: An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: July 19, 2005
    Assignee: International Rectifier Corporation
    Inventors: Richard Francis, Chiu Ng
  • Patent number: 6894611
    Abstract: A method and system for transmitting engine control data to or from the engine control unit of an engine. The system includes a local communication unit capable of establishing a wireless communication link with a remote communication unit and a link for transferring data between the local communication unit and the engine control unit. In operation, a wireless communication link is established between the local communication unit and the remote communication unit. Engine control data is transferred between the local communication unit and the engine control unit and transmitted between the local communication unit and the remote communication unit via the wireless communication link.
    Type: Grant
    Filed: September 23, 2002
    Date of Patent: May 17, 2005
    Assignee: General Electric Company
    Inventors: Mark Gerard Butz, Richard Francis Schuster, Kimberly Anne DePew
  • Patent number: 6884303
    Abstract: A wafer having a rounded edge is thinned to 100 microns or less, producing a tapered razor like edge. The edge is ground to blunt it and reduce danger to personnel and equipment during handling of the wafer.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: April 26, 2005
    Assignee: International Rectifier Corporation
    Inventor: Richard Francis
  • Publication number: 20050033401
    Abstract: According to an aspect of the invention there is provided an apparatus for deploying a fistula device. The apparatus comprises an elongate cover member having a proximal end and a distal end, and an elongate support member within the cover member for supporting the fistula device and configured for relative movement with respect to the cover member so as to release the fistula device at a desired location.
    Type: Application
    Filed: July 7, 2004
    Publication date: February 10, 2005
    Inventors: Brendan Cunniffe, Niall Duffy, Noel Coyle, Richard Francis, Ronan Thornton
  • Publication number: 20050021124
    Abstract: According to an aspect of the invention there is provided an apparatus for delivering a medical stent to a treatment site for forming a conduit between a blood vessel and a heart chamber. The apparatus comprises a hollow cylindrical body having a proximal end and a distal end, the stent being positioned within the body; and an actuator for expelling the stent from the body to form the conduit.
    Type: Application
    Filed: July 7, 2004
    Publication date: January 27, 2005
    Inventors: Brendan Cunniffe, Niall Duffy, Noel Coyle, Richard Francis
  • Publication number: 20040206220
    Abstract: A table saw having a horizontal worktable, an open bottom base below the worktable enclosing a rotating blade that cuts wood objects on the worktable surface, means for driving the saw blade, a saw blade elevating and tilting mechanism, with means for supporting the base from the floor has a sawdust collector for removable attachment to the underside of a table saw having a flexible catch bag with an opening at its top to receive the sawdust, a connection at the bottom for attachment to a vacuum device, and a zipper at the bottom for batch-wise collection and continuous discharge of sawdust. The outer peripheral edge of the top opening has a fastening structure, such as VELCRO, that permits the sawdust collector to be removably attached to a corresponding fastening structure under the table saw.
    Type: Application
    Filed: March 26, 2004
    Publication date: October 21, 2004
    Inventor: Richard Francis Keenan
  • Patent number: 6795207
    Abstract: A system and method for controlling a print job in a printer, such as canceling the print job held in the printer. The system includes a printer having a processor that receives print jobs, including one or more print data swaths, from one or more host computers, and each print data swath includes at least a predefined group of characters. The system also has at least one host computer in communication with the printer and which selectively sends print jobs including print data and/or command data. The host computer further selectively sends a command which is a predetermined group of characters within the print data swath, and the command alters a function in the printer. The command is preferably a series of identical characters, such as NULL characters, and the command preferably causes the printer to enter a command mode to execute the commanded function.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: September 21, 2004
    Assignee: Lexmark International, Inc.
    Inventors: John Booth Bates, Mark Walter Fagan, Richard Francis Russell
  • Publication number: 20040178457
    Abstract: An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
    Type: Application
    Filed: March 14, 2003
    Publication date: September 16, 2004
    Applicant: International Rectifier Corporation
    Inventors: Richard Francis, Chiu Ng
  • Patent number: 6753580
    Abstract: A diode is formed having a weak injection shallow, low P concentration anode in an N type wafer or die. The resulting diode has a soft reverse recovery characteristic with low recovery voltage and is particularly useful either as a power factor correction diode or as an antiparallel connected diode in a motor control circuit.
    Type: Grant
    Filed: May 5, 2000
    Date of Patent: June 22, 2004
    Assignee: International Rectifier Corporation
    Inventors: Richard Francis, Chiu Ng, Fabrizio Ruo Redda
  • Patent number: 6741919
    Abstract: A method and apparatus for detecting an impending failure of a process sensor is provided. The method includes determining a sensor output noise component, and comparing the output noise component to a historical sensor output noise signature based on at least one of the range of span of the sensor and the process operating conditions. The apparatus includes a computing device including a processor and a memory communicatively coupled to the processor wherein the processor is programmed to execute a software product code segment that includes a comparator, a data historian, an isolator module, and a limit module. The computing device is configured to detect impending failure of a sensor using an output signal noise component of the sensor and wherein the sensor senses a parameter of a process associated with the computing device.
    Type: Grant
    Filed: February 26, 2003
    Date of Patent: May 25, 2004
    Assignee: General Electric Company
    Inventors: Richard Francis Schuster, Malcolm John Ashby, Matthew William Wiseman