Abstract: A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): (wherein R1 is an organic group having at least two amines and at least three C6-40 aromatic rings, R2 and R3 are each a hydrogen atom, a C1-10 alkyl group, a C6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R2 and R3 optionally form a ring together). The above mentioned composition t, wherein R1 is a divalent organic group derived from N,N?-diphenyl-1,4-phenylenediamine.

Abstract: A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

Abstract: A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R1 represents a C1 to C30 divalent group; each of R2 to R7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R5 is a hydroxyl group or a thiol group; each of m2, m3, and m6 is an integer of 0 to 9; each of m4 and m7 is an integer of 0 to 8; m5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p2 to p7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q1 represents a single bond or an m12-valent organic group; each of R12 and R15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R13 and R16 represents a hydrogen atom or a methyl group; each of R14 and R17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group;

Abstract: There is provided a composition for coating a stepped substrate that has high filling properties of a pattern, and is capable of forming a coating film that does not cause degassing and heat shrinkage, and is used to form a coating film having flattening properties on the substrate. The composition for coating a stepped substrate includes a compound (C) having in the molecule a partial structure of Formula (1) (where R1 and R2 are each independently a hydrogen atom, a C1-10 alkyl group, or a C6-40 aryl group; five R3s are each independently a hydrogen atom, a hydroxy group, a C1-10 alkoxy group, a C1-10 alkyl group, a nitro group, or a halogen atom; and * is a bond site to the compound); and a solvent.

Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.

Abstract: Provided are: a composition for forming a coating film, the composition comprising (a) a polymer containing a structural unit represented by formula (1a) or (1b), and (b) a solvent including 51-99 mass % of water and 1-49 mass % of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, methyl 2-hydroxyisobutyrate, ethyl 3-ethoxypropionate, and ethyl lactate; and a method for manufacturing a semiconductor device using the same.

Abstract: A novel aqueous solution for resist pattern coating. An aqueous solution for resist pattern coating, including: a copolymer as component A, the copolymer having an ethylene oxide unit and a C3 alkylene oxide unit in a main chain and having a hydroxy group at a terminal; a water-soluble polymer, a water-soluble monomer, or a water-soluble oligomer as component B, the water-soluble polymer being other than the copolymer as the component A; and a solvent as component C, the solvent containing water as a main component. The copolymer as the component A is for example a block copolymer of formula (1) below: HOR1OxR2OyR3OzH??(1) wherein R1, R2, and R3 are each independently an ethylene group, a propylene group, or a trimethylene group, and x, y, and z are each independently an integer of 5 to 100.

Abstract: A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.

Abstract: A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): (wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 3?1+m?10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3?u+v?8; R1-R4 are each independently hydrogen atom, hydroxy group, C1-10 hydrocarbon group, or C6-20 aryl group; when R1-R4 are each the C1-10 hydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.

Abstract: A stepped substrate-coating composition having high properties of filling a pattern and capable of forming on a substrate a coating film that can be formed by photocuring, has flattening properties, and has high heat resistance after irradiation with light. A photocurable composition for coating a stepped substrate, the photocurable composition containing a polymer containing a unit structure of Formula (1): wherein A1, A2, and A3 are each independently an aromatic C6-100 ring optionally containing a heteroatom or a hydrocarbon group containing an aromatic C6-100 ring optionally containing a heteroatom, B1, B2, and B3 are each independently Formula (2): wherein R1 is a C1-10 alkylene group, a C1-10 alkenylene group, a C1-10 alkynylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—O—, —C(O)—NRa—, —NRb—, or a group including a combination thereof, R2 is a hydrogen atom or a C1-10 alkyl group.

Abstract: An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Abstract: A resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film wherein the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1).

Abstract: A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a C2-10 alcohol.

Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.

Abstract: An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3): wherein R1s are each independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protecting group, R3 is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R4 is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer's content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.

Abstract: A stepped substrate-coating composition having high properties of filling a pattern and capable of forming on a substrate a coating film that can be formed by photocuring, has flattening properties, and has high heat resistance after irradiation with light. A photocurable composition for coating a stepped substrate, the photocurable composition containing a polymer containing a unit structure of Formula (1): wherein A1, A2, and A3 are each independently an aromatic C6-100 ring optionally containing a heteroatom or a hydrocarbon group containing an aromatic C6-100 ring optionally containing a heteroatom, B1, B2, and B3 are each independently Formula (2): wherein R1 is a C1-10 alkylene group, a C1-10 alkenylene group, a C1-10 alkynylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—O—, —C(O)—NRa—, —NRb—, or a group including a combination thereof, R2 is a hydrogen atom or a C1-10 alkyl group.

Abstract: A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each R1 is a methyl group or an ethyl group, and R2 and R3 are independently a hydrogen atom, a C1-4 alkyl group, or phenyl group.