Abstract: A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R1 represents a C1 to C30 divalent group; each of R2 to R7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R5 is a hydroxyl group or a thiol group; each of m2, m3, and m6 is an integer of 0 to 9; each of m4 and m7 is an integer of 0 to 8; m5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p2 to p7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q1 represents a single bond or an m12-valent organic group; each of R12 and R15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R13 and R16 represents a hydrogen atom or a methyl group; each of R14 and R17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group;

Abstract: There is provided a composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c): (wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 3?1+m?10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3?u+v?8; R1, R2, R3, and R4 are each independently a hydrogen atom, a hydroxy group, a C1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C6-20 aryl group optionally having at least one hydroxy group as a substituent; when R1, R2, R3, and R4 are each the C1-10 hydrocarbon group, R1 and R2 optionally form a benzene ring together with a ring carbon atom to which R1 and R2 are bonded, R3 and R4 optionally form a benzene ring together with a ring carbon

Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently.

Abstract: A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.

Abstract: A resist underlayer film-forming composition having a dramatically improved crosslinking ability over conventional compositions, and further, a resist underlayer film-forming composition that crosslinks with a component of a resist material, in order to improve the adhesion of a resist underlayer film to a resist pattern. A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of formula (1) and a structural unit of formula (2): (wherein each R1 is independently a hydrogen atom or a methyl group; each R2 is independently a C1-3 alkylene group; R3 is a single bond or a methylene group; A is a linear, branched, or cyclic aliphatic group having a carbon atom number of 1 to 12 and optionally having a substituent, or a C6-16 aromatic or heterocyclic group optionally having a substituent; and Pr is a protecting group); a crosslinking agent; an organic acid catalyst; and a solvent.

Abstract: A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a??Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb??Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof.

Abstract: A coating solution has a polymer having a formula (1) structural unit, a formula (2) primary, secondary, or tertiary amine, and a formula (3) ester capable of dissolving the polymer and amine: R1 is a hydrogen atom or methyl group. L is a divalent aromatic group optionally having at least one substituent, —C(?O)—O— group, or —C(?O)—NH— group. The —C(?O)—O— or —C(?O)—NH— group carbon atom is attached to a polymer main chain. X is a hydrogen atom or linear or branched alkyl or alkoxy group having a 1-10 carbon atom number. At least one alkyl group hydrogen atom is optionally substituted with a halogen atom or hydroxy group. R2, R3, and R4 are independently a hydrogen atom, hydroxy group, or linear, branched, or cyclic organic group having a 1-16 carbon atom number. R5 and R6 are each independently a linear or branched organic group having a 1-16 carbon atom number.

Abstract: There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): [wherein two R1s are each independently a C1-10 alkyl group, a C2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R2s are each independently a hydrogen atom, a C1-10 alkyl group, a C2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two —C(CH3)2— groups bonded to the benzene ring are in a meta position or a para position], and a solvent.

Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

Abstract: An underlayer film-forming composition for a self-assembled film having a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

Abstract: An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3): wherein R1s are each independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protecting group, R3 is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R4 is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer's content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.

Abstract: Underlayer films of high-energy radiation resists applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation are prepared from compositions including a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.

Abstract: There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): [wherein two R1s are each independently a C1-10 alkyl group, a C2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R2s are each independently a hydrogen atom, a C1-10 alkyl group, a C2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two —C(CH3)2— groups bonded to the benzene ring are in a meta position or a para position], and a solvent.

Abstract: There is provided a silicon-containing resist underlayer film that is usable as a hard mask in a lithography process and can be removed by a wet process using a chemical solution, and particularly, a mixed aqueous solution of sulfuric acid with hydrogen peroxide (SPM). A resist underlayer film-forming composition is represented by comprising a hydrolysis-condensation of a hydrolysable silane having an epoxy group in an amount of 10 to 90% by mole relative to the total amount of hydrolysable silanes by an aqueous solution of an alkaline substance, and in a reaction system containing the hydrolysis-condensate, a hydrolysis-condensate containing an organic group having a dihydroxy group obtained by ring-opening the epoxy group by an inorganic acid or a cation exchange resin is further comprised.

Abstract: A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).

Abstract: A novel aqueous solution for resist pattern coating. An aqueous solution for resist pattern coating, including: a copolymer as component A, the copolymer having an ethylene oxide unit and a C3 alkylene oxide unit in a main chain and having a hydroxy group at a terminal; a water-soluble polymer, a water-soluble monomer, or a water-soluble oligomer as component B, the water-soluble polymer being other than the copolymer as the component A; and a solvent as component C, the solvent containing water as a main component. The copolymer as the component A is for example a block copolymer of formula (1) below: HO?R1O?x?R2O?y?R3O?zH ??(1) wherein R1, R2, and R3 are each independently an ethylene group, a propylene group, or a trimethylene group, and x, y, and z are each independently an integer of 5 to 100.

Abstract: A novel aqueous solution for resist pattern coating including, as an A component, a cyclodextrin selected from the group consisting of ?-cyclodextrin, ?-cyclodextrin, and ?-cyclodextrin, or a derivative of the cyclodextrin, as a B component, a solvent containing water as a main component, and as a component C, an organic sulfonic acid of Formula (2): (wherein R4 is alkyl or fluorinated alkyl group, or an aromatic group having at least one substituent, and M+ is a hydrogen ion, an ammonium ion, a pyridinium ion, or an imidiazolium ion), or a salt thereof, wherein the content of the A component is 0.1% by mass to 10% by mass relative to 100% by mass of the total aqueous solution, and wherein the content of the organic sulfonic acid or the salt thereof is 0.01% by mass to 50% by mass relative to 100% by mass of the component A.