Patents by Inventor Robert Beach

Robert Beach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Personal area networks
    Patent number: 8416735
    Abstract: A system is provided with mobile units that are arranged to conduct wireless data communications with access points following a first protocol, such as IEEE standard 802.11. The mobile units are further arranged for modified protocol communications with peripheral devices that permanently associate with a mobile unit.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: April 9, 2013
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach
  • Enhancement mode GaN HEMT device and method for fabricating the same
    Patent number: 8404508
    Abstract: An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: March 26, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao
  • RF port for multiple wireless local area networks
    Patent number: 8391256
    Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: March 5, 2013
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach
  • Compensated gate MISFET and method for fabricating the same
    Patent number: 8350294
    Abstract: A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: January 8, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Jianjun Cao, Alana Nakata, Guang Yuan Zhao
  • ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
    Publication number: 20120193688
    Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 2, 2012
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Y. Zhao, Alana Nakata
  • ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
    Publication number: 20120175631
    Abstract: Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.
    Type: Application
    Filed: February 23, 2012
    Publication date: July 12, 2012
    Inventors: Alexander Lidow, Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter, Fang Chang Liu
  • SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
    Publication number: 20120153300
    Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Johan Strydom, Alana Nakata, Guang Y. Zhao
  • System and method for data communication in a wireless network
    Patent number: 8204039
    Abstract: Described is a system comprising a first wireless device and a second wireless device. The first device has access to a packet routing table which includes data indicative of a packet transmission path in a wireless mesh communications network. The second wireless device is communicatively coupled to the first device and has access to the routing table. Upon receipt of a packet by the first device which is addressed to the second device, the first device determines, as a function of at least one of (i) the routing table and (ii) a first identifier of the second device, a second identifier of a third wireless device to receive the packet directly from the first device. At least one of the first, second and third devices updates the routing table.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: June 19, 2012
    Assignee: Symbol Technologies, Inc.
    Inventors: Robert Beach, Dean Kawaguchi, Ramesh Sekhar
  • Complimentary nitride transistors vertical and common drain
    Patent number: 8193612
    Abstract: A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: June 5, 2012
    Assignee: International Rectifier Corporation
    Inventors: Robert Beach, Paul Bridger
  • III-nitride current control device and method of manufacture
    Patent number: 8174048
    Abstract: A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: May 8, 2012
    Assignee: International Rectifier Corporation
    Inventor: Robert Beach
  • III-nitride power device
    Patent number: 8174051
    Abstract: A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.
    Type: Grant
    Filed: June 26, 2007
    Date of Patent: May 8, 2012
    Assignee: International Rectifier Corporation
    Inventors: Jianjun Cao, Yanping Ma, Robert Beach, Michael A. Briere
  • III-nitride semiconductor device fabrication
    Patent number: 8168000
    Abstract: A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking.
    Type: Grant
    Filed: June 14, 2006
    Date of Patent: May 1, 2012
    Assignee: International Rectifier Corporation
    Inventors: Mike Briere, Robert Beach
  • Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
    Patent number: 8138561
    Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-?m2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: March 20, 2012
    Assignee: MagIC Technologies, Inc.
    Inventors: Cheng T. Horng, Ru-Ying Tong, Chyu-Jiuh Torng, Po-Kang Wang, Robert Beach, Witold Kula
  • Enhancement Mode III-Nitride FET
    Publication number: 20110275183
    Abstract: A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
    Type: Application
    Filed: July 21, 2011
    Publication date: November 10, 2011
    Inventor: Robert Beach
  • Multiple wireless local area networks occupying overlapping physical spaces
    Patent number: 8050240
    Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks occupying common physical space. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
    Type: Grant
    Filed: June 8, 2005
    Date of Patent: November 1, 2011
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach
  • Method of forming a III-nitride selective current carrying device including a contact in a recess
    Patent number: 8043906
    Abstract: A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: October 25, 2011
    Assignee: International Rectifier Corporation
    Inventor: Robert Beach
  • VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110248283
    Abstract: Semiconductor devices, such as GaN HEMT and HFET devices, and methods of forming such devices, with a via that provides an electrical connection between a contact and a corresponding external contact pad. Embodiments include semiconductor devices with a via extending through a dielectric material to connect a gate to a corresponding external contact pad, and semiconductor devices with a via extending through a dielectric material to connect an Ohmic contact and a corresponding external contact pad. Embodiments also include semiconductor devices with a via connecting an external contact pad to a gate that is formed above a dielectric material.
    Type: Application
    Filed: April 6, 2011
    Publication date: October 13, 2011
    Inventors: Jianjun Cao, Robert Beach, Alexander Lidow, Alana Nakata
  • III-Nitride Power Semiconductor Device
    Publication number: 20110241019
    Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
    Type: Application
    Filed: June 14, 2011
    Publication date: October 6, 2011
    Inventors: Robert Beach, Zhi He, Jianjun Cao
  • Method for Fabricating a III-Nitride Semiconductor Device
    Publication number: 20110244671
    Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
    Type: Application
    Filed: June 14, 2011
    Publication date: October 6, 2011
    Inventors: Robert Beach, Zhi He, Jianjun Cao
  • Wireless local area networks
    Patent number: 8027320
    Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: September 27, 2011
    Assignee: Symbol Technologies, Inc.
    Inventor: Robert Beach