Abstract: A system for random number generation may include non-volatile memory, and a random number stored on the non-volatile memory. The system may also include a key linked to the random number. The system may further include a computer-apparatus designed to use the random number based upon the key.

Abstract: A method for enabling double pumping in a limited switch dynamic logic circuit includes precharging a dynamic node in accordance with a first clock signal and a second clock signal. The dynamic node is evaluated to a first value in response to one or more first input signals of a first evaluation tree in accordance with the first clock signal. The dynamic node is evaluated to a second value in response to one or more second input signals of a second evaluation tree in accordance with the second clock signal.

Abstract: A regular expression matcher system, including: a deterministic finite state machine (DFSM); a ternary content addressable memory (TCAM) matcher to compare a word stored at the TCAM matcher to an input stream, wherein the word determines a state-to-state transition of the DFSM from a comparison result; a programmable logic connected to an output of the TCAM matcher to identify a next state in the DFSM based on the comparison result; a state register to update a current state of the DFSM to the next state; and a collection data structure coupled to the TCAM matcher and the programmable logic to store a sequence of required state transitions for the DFSM, wherein the programmable logic determines a next required state transition to be matched from the sequence.

Abstract: A dynamic logic circuit includes a precharge device configured to precharge a dynamic node in accordance with a first and second evaluation clock signal. A first evaluation tree is configured to evaluate the dynamic node to a first value in response to one or more first input signals in accordance with the first evaluation clock signal. A second evaluation tree configured to evaluate the dynamic node to a second value in response to one or more second input signals in accordance with the second evaluation clock signal.

Abstract: A method for increasing performance in a limited switch dynamic logic (LSDL) circuit includes precharging a dynamic node during a precharge phase of a first and second evaluation clock signal. The dynamic node is evaluated to a first logic value in response to one or more first input signals of a first evaluation tree during an evaluation phase of the first evaluation clock signal. The dynamic node is evaluated to a second logic value in response one or more second input signals of a second evaluation tree during an evaluation phase of the second evaluation clock signal. A signal of the LSDL circuit is outputted in response to the dynamic node according to an output latch clock signal.

Abstract: A limited switch dynamic logic (LSDL) circuit includes a dynamic logic circuit and a static logic circuit. The dynamic logic circuit includes a precharge device configured to precharge a dynamic node during a precharge phase of a first evaluation clock signal and a second evaluation clock signal. A first evaluation tree is configured to evaluate the dynamic node to a first logic value in response to one or more first input signals during an evaluation phase of the first evaluation clock signal. A second evaluation tree is configured to evaluate the dynamic node to a second logic value in response to one or more second input signals during an evaluation phase of the second evaluation clock signal. A static logic circuit is configured to provide an output of the LSDL circuit in response to the dynamic node according to an output latch clock signal.

Abstract: A system for programming a phase change material-content addressable memory (PCM-CAM). The system includes a receiving unit for receiving a word to be written in the PCM-CAM. The word includes low bits represented by a low resistance state in the PCM-CAM and high bits represented by a high resistance state in the PCM-CAM. The system includes a writing unit configured to repeatedly write the low bits in memory cells of the PCM-CAM until the resistance of the memory cells are below a threshold value, and to write high bits in memory cells of the PCM-CAM only once.

Abstract: There are provided methods and computer program products for implementing instruction set architectures with non-contiguous register file specifiers. A method for processing instruction code includes processing an instruction of an instruction set using a non-contiguous register specifier of a non-contiguous register specification. The instruction includes the non-contiguous register specifier.

Abstract: A system and method for operating a unipolar memory cell array including a bidirectional access diode. An example embodiment is a method including determining if the operating state of the unipolar memory cell is in a select state or a deselect state and the programming state is a read state or a write state. The method switches a column voltage switch based on the operating state and the programming state of the unipolar memory cell. The method further switches a row voltage switch based on the operating state and the programming state of the unipolar memory cell.

Abstract: A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

Abstract: Embodiments of the invention provide electronic synapse devices for reinforcement learning. An electronic synapse is configured for interconnecting a pre-synaptic electronic neuron and a post-synaptic electronic neuron. The electronic synapse comprises memory elements configured for storing a state of the electronic synapse and storing meta information for updating the state of the electronic synapse. The electronic synapse further comprises an update module configured for updating the state of the electronic synapse based on the meta information in response to an update signal for reinforcement learning. The update module is configured for updating the state of the electronic synapse based on the meta information, in response to a delayed update signal for reinforcement learning based on a learning rule.

Abstract: Embodiments of the invention provide electronic synapse devices for reinforcement learning. An electronic synapse is configured for interconnecting a pre-synaptic electronic neuron and a post-synaptic electronic neuron. The electronic synapse comprises memory elements configured for storing a state of the electronic synapse and storing meta information for updating the state of the electronic synapse. The electronic synapse further comprises an update module configured for updating the state of the electronic synapse based on the meta information in response to an update signal for reinforcement learning. The update module is configured for updating the state of the electronic synapse based on the meta information, in response to a delayed update signal for reinforcement learning based on a learning rule.

Abstract: A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

Abstract: A system and method for operating a unipolar memory cell array including a bidirectional access diode. The system includes a column voltage switch electrically coupled to a plurality of column voltages. The column voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of column voltages includes at least one select column voltage and one deselect column voltage. The system includes a row voltage switch electrically coupled to a plurality of row voltages. The row voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of row voltages includes at least one select row voltage and one deselect row voltage. The system includes a column and row decoder electrically coupled to a select line of the column and row voltage switches, respectively.

Abstract: An example embodiment is a circuit for determining a binary value of a memory cell. The circuit includes shunt capacitors having different capacitances to selectively couple with the memory cell, and a controller configured to iteratively charge the shunt capacitors to a first voltage until a selected shunt capacitor causes the first voltage to decay through the memory cell to a first reference voltage within a predetermined time range, determine a binary value of the most significant bits of the memory cell based on the selected shunt capacitor, charge the selected shunt capacitor to a second voltage after determining the binary value of the most significant bits of the memory cell, and determine a binary value of the least significant bits of the memory cell based on a decay of the second voltage at the selected shunt capacitor through the memory cell.

Abstract: A system for random number generation may include non-volatile memory, and a random number stored on the non-volatile memory. The system may also include a key linked to the random number. The system may further include a computer-apparatus designed to use the random number based upon the key.

Abstract: A system for random number generation may include non-volatile memory, and a random number stored on the non-volatile memory. The system may also include a key linked to the random number. The system may further include a computer-apparatus designed to use the random number based upon the key.

Abstract: Embodiments of the invention relate to a time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a universal substrate of adaptation. One embodiment comprises a neurosynaptic device including a memory device that maintains neuron attributes for multiple neurons. The module further includes multiple bit maps that maintain incoming firing events for different periods of delay and a multi-way processor. The processor includes a memory array that maintains a plurality of synaptic weights. The processor integrates incoming firing events in a time-division multiplexing manner. Incoming firing events are integrated based on the neuron attributes and the synaptic weights maintained.

Abstract: Embodiments of the invention relate to a time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a neural network. One embodiment comprises maintaining neuron attributes for multiple neurons and maintaining incoming firing events for different time steps. For each time step, incoming firing events for said time step are integrated in a time-division multiplexing manner. Incoming firing events are integrated based on the neuron attributes maintained. For each time step, the neuron attributes maintained are updated in parallel based on the integrated incoming firing events for said time step.

Abstract: An example embodiment is a circuit for determining a binary value of a memory cell. The circuit includes shunt capacitors having different capacitances to selectively couple with the memory cell, and a controller configured to iteratively charge the shunt capacitors to a first voltage until a selected shunt capacitor causes the first voltage to decay through the memory cell to a first reference voltage within a predetermined time range, determine a binary value of the most significant bits of the memory cell based on the selected shunt capacitor, charge the selected shunt capacitor to a second voltage after determining the binary value of the most significant bits of the memory cell, and determine a binary value of the least significant bits of the memory cell based on a decay of the second voltage at the selected shunt capacitor through the memory cell.