Abstract: A silicon carrier structure for electronic packaging includes a base substrate, a silicon carrier substrate disposed on the base substrate, a memory chip disposed on the silicon carrier substrate, a microprocessor chip disposed on the silicon carrier substrate, an input/output chip disposed on the silicon carrier substrate, and a clocking chip disposed on the silicon carrier substrate.

Abstract: An embodiment of the invention provides a method of separating an early clock pulse and a late clock pulse into two different latches, wherein the early clock pulse is generated through a bit line. In response to the early clock pulse rising, a first data waveform is sent to a fourth data waveform. In response to a third data waveform rising, an early precharge is turned off. In response to the turning off of the early precharge and in response to a fifth data waveform dropping, an eighth data waveform rises if the first data waveform has a value of 1. In response to a sixth data waveform rising, a first pulse latch is opened.

Abstract: A content addressable memory device with a plurality of memory cells storing ternary data values of high, low, and don't care. An aspect of the content addressable memory device is the use of first memory elements and second memory elements in the memory cells. The first and second memory elements are electrically coupled in parallel circuit to a match-line. The first memory elements are coupled to first word-lines and the second memory elements are coupled to second word-lines. The first memory elements are configured to store low resistance states if the ternary data value is low and high resistance states if the ternary data value is either high or don't care. The second memory elements are configured to store the low resistance states if the ternary data value is high and the high resistance states if the ternary data value is either low or don't care.

Abstract: An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.

Abstract: Content addressable memory device utilizing phase change devices. An aspect of the content addressable memory device is the use of a comparatively lower power search-line access element and a comparatively higher power word-line access element. The word-line access element is only utilized during write operations and the search-line access element is only utilized during search operations. The word-line access element being electrically coupled to a second end of a phase change memory element and a word-line. The search-line access element also being electrically coupled to the second end of the phase change memory element and a search-line. The search-line being electrically coupled to a match-line. A bit-line is electrically coupled to a first end of the phase change memory element. Additionally, a complementary set of access elements, a complementary phase change memory element, a complementary search-line, and a complementary bit-line are also included in the content addressable memory device.

Abstract: An embodiment of the invention provides a method of separating an early clock pulse and a late clock pulse into two different latches, wherein the early clock pulse is generated through a bit line. In response to the early clock pulse rising, a first data waveform is sent to a fourth data waveform. In response to a third data waveform rising, an early precharge is turned off. In response to the turning off of the early precharge and in response to a fifth data waveform dropping, an eighth data waveform rises if the first data waveform has a value of 1.

Abstract: A shared parallel adder tree for executing multiple different population count operations on a single datum includes a number of carry-save adders (CSAs) and/or half adders (HAs), arranged in rows, where certain CSAs and HAs are dedicated to a single population count operation, while other CSAs and HAs are shared among two or more population count operations. The datum is applied to the first row in the tree. Partial sums of the number of ones at various locations within the tree are routed to certain CSAs and/or HAs “down” the tree to propagate the particular population count operations. Carry-propagate adders generate at least a portion of the final sum of the number of ones in certain population count operations. An “AND” operation on a particular number of the bits in the datum provides the high order bit of the resulting sum of the particular population count operation.

Abstract: A hybrid circuit for a memory includes: a skewed static logic gate circuit; a dynamic pre-discharge device coupled with the skewed static logic gate circuit for operating the static logic gate circuit as a dynamic circuit.

Abstract: Content addressable memory device utilizing phase change devices. An aspect of the content addressable memory device is the use of a comparatively lower power search-line access element and a comparatively higher power word-line access element. The word-line access element is only utilized during write operations and the search-line access element is only utilized during search operations. The word-line access element being electrically coupled to a second end of a phase change memory element and a word-line. The search-line access element also being electrically coupled to the second end of the phase change memory element and a search-line. The search-line being electrically coupled to a match-line. A bit-line is electrically coupled to a first end of the phase change memory element. Additionally, a complementary set of access elements, a complementary phase change memory element, a complementary search-line, and a complementary bit-line are also included in the content addressable memory device.

Abstract: A facility is provided for managing register maps for map-based indirect register file access within a processor. The management facility includes a register mapping including a set of maps, each map of the set of maps having a plurality of map registers. A set of actual registers is indirectly accessed by the processor via map entries of the set of maps. The number of actual registers in the set of actual registers is greater than the number of map entries in the set of maps, and the map entries of the set of maps reference only a subset of the set of actual registers at any given time. The facility includes managing updates to multiple entries of the set of maps of the register mapping by updating multiple map entries of at least one map of the set of maps responsive to executing a single update instruction.

Abstract: A hybrid circuit for a memory includes: a skewed static logic gate circuit; a dynamic pre-discharge device coupled with the skewed static logic gate circuit for operating the static logic gate circuit as a dynamic circuit.

Abstract: A memory cache comprising, a data sector having a sector ID, wherein the data sector stores a data entry, a primary directory having a primary directory entry, wherein a position of the primary directory entry is defined by a congruence class value and a way value, and a secondary directory corresponding to the data sector having a secondary directory entry corresponding to the data sector, wherein the secondary directory entry include, a primary ID field corresponding to the way value, and a sector ID field operative to identify the sector ID.

Abstract: A scannable limited switch dynamic logic (LSDL) circuit including a data input and a data output, a combinational logic circuit in communication with the data input, a pre-charge circuit in communication with the combinational logic circuit, a footer circuit in communication with the combinational logic, a keeper circuit in communication with the combinational logic circuit and the pre-charge circuit, a scan input connected to the data input, a scan input circuit in communication with the scan input, the combinational logic circuit, the pre-charge circuit, and the keeper circuit, a modified inverter circuit in communication with the combinational logic circuit, the pre-charge circuit, the keeper circuit, and the scan input circuit, a parallel gate circuit in communication with the modified inverter circuit, a series gate circuit in communication with the modified inverter circuit and the parallel gate circuit, a feedback inverter connected between an internal node and a feedback node, and an output buffer con

Abstract: A method for accessing data in memory comprising, receiving address bits associated with a data item including a first tag, an index, and a sector ID from a requestor, associating the index with a congruence class in a primary directory, determining whether the first tag matches a second tag in a plurality of tags in the congruence class, wherein the each tag of the plurality of tags uniquely identifies a cache line associated with a primary ID in the congruence class, defining the primary ID of the second tag of the primary directory that matches the first tag, determining whether the primary ID and the sector ID are present in a secondary directory entry having a one to one correspondence with a sector in a data array, and sending the data item from the sector to the requestor.

Abstract: A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes.

Abstract: A facility is provided for managing register maps for map-based indirect register file access within a processor. The management facility includes a register mapping including a set of maps, each map of the set of maps having a plurality of map registers. A set of actual registers is indirectly accessed by the processor via map entries of the set of maps. The number of actual registers in the set of actual registers is greater than the number of map entries in the set of maps, and the map entries of the set of maps reference only a subset of the set of actual registers at any given time. The facility includes managing updates to multiple entries of the set of maps of the register mapping by updating multiple map entries of at least one map of the set of maps responsive to executing a single update instruction.

Abstract: A facility is provided for managing register maps for map-based indirect register file access within a processor. The management facility includes a register mapping including a set of maps, each map of the set of maps having a plurality of map registers. A set of actual registers is indirectly accessed by the processor via map entries of the set of maps. The number of actual registers in the set of actual registers is greater than the number of map entries in the set of maps, and the map entries of the set of maps reference only a subset of the set of actual registers at any given time. The facility includes managing updates to multiple entries of the set of maps of the register mapping by updating multiple map entries of at least one map of the set of maps responsive to executing a single update instruction.

Abstract: Embodiments may include a duty cycle controller to adjust the duty cycle of the clock signal based upon a delay signal and an input clock signal. A duty cycle detector may determine signals with frequencies based upon the duty cycle of the output signal and a correction module may compare the frequencies of the detector signals to generate the delay signal. In some embodiments, once the duty cycle of the output clock signal reaches the desired duty cycle such as fifty percent, the correction module may be turned off.

Abstract: A 4-to-2 carry save adder using limited switching dynamic logic (LSDL) to reduce power consumption while reducing the delay of outputting the sum and carry bits. The 4-to-2 carry save adder may include a first LSDL circuit configured to output a sum bit. The carry save adder may further include a second LSDL circuit configured to output a carry bit. Both the first and second LSDL circuits use a carry generated in the current stage that was previously generated in the previous stage (next lower order bit position). Since the carry is generated in the current stage and not in the previous stage, the delay in outputting the sum and carry bits is reduced and hence the performance of carry save adders is improved. Further, since LSDL circuits were used in the carry save adder, power consumption was reduced while using a small amount of area.

Abstract: A 4-to-2 carry save adder with a reduction in the delay of outputting the sum and carry bits. The 4-to-2 carry save adder may include a lower order full order coupled to a higher order full adder. The carry save adder may further include a logic unit coupled to the higher order full adder where the logic unit is configured to generate a carry bit to be inputted to the higher order full adder that normally would be generated from the carry save adder located in the previous stage. By generating this carry bit (carry-in bit) in the current stage and not in the previous stage, the delay of the carry-in bit inputted to the higher order full adder is reduced thereby reducing the delay of outputting the sum and carry bits by the higher order full adder.