Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding to device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one sensor row (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A mirror (1a; 1a?; 1b; 1b; 1c; 1c?) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P??) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H??) and a low refractive index layer (L??). The layer arrangement has at least one graphene layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.

Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one line sensor (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: A method for aligning a mirror of a microlithographic projection exposure apparatus, according to one formulation, involves: recording a first partial interferogram between a wave reflected at a first mirror segment (101) and a reference wave reflected at a reference surface (110, 310, 510), recording a second partial interferogram between a wave reflected at a second mirror segment (102) and a reference wave reflected at the reference surface, determining a phase offset between the first partial interferogram and the second partial interferogram, and aligning the first mirror segment and the second mirror segment in relation to one another in accordance with the determined phase offset, so that the distance of the relevant mirror segments (101, 102) from a respective predetermined, hypothetical surface in the direction of the respective surface normal is less than ?/10 at each point on the mirror segments, where ? denotes the operating wavelength of the mirror.

Abstract: An objective for a projection exposure apparatus includes a metrology stage arranged on the frame of the objective. The objective includes at least one optical component, an objective mount for mounting the optical component, and a positioning device for holding at least one measuring device. The positioning device is connected to the objective mount and has at least one degree of freedom of displacement for displacing the measuring device.

Abstract: An optical imaging device, including an imaging unit and a measuring device. The imaging unit includes a first optical element group having at least one first optical element, which contributes to the imaging. The measuring device determines an imaging error, which occurs during the imaging, using a capturing signal. The measuring device includes a measurement light source, a second optical element group and a capturing unit. The measurement light source emits at least one measurement light bundle, The second optical element group includes an optical reference element and a second optical element, which guide the measurement light bundle onto the capturing unit, to generate the capturing signal. Each second optical element has a defined spatial relationship with a respective one of the first optical elements, The second optical elements differ from the first optical elements. The measuring device determines the imaging error with the capturing signal.

Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Abstract: A projection arrangement for imaging lithographic structure information comprises: an optical element, which has at least partly a coating composed of an electrically conductive layer material. The coating comprises a continuous region, which has no elements that shade projection light. In this case, the layer material and/or the optical element change(s) an optical property, in particular a refractive index or an optical path length, depending on a temperature change. At least one mechanism for coupling energy into the layer material is provided, which couples in energy in such a way that the layer material converts coupled-in energy into thermal energy. The layer material may comprise graphene, chromium and/or molybdenum sulfide (MoS2).

Abstract: An optical imaging device, including an imaging unit and a measuring device. The imaging unit includes a first optical element group having at least one first optical element, which contributes to the imaging. The measuring device determines an imaging error, which occurs during the imaging, using a capturing signal. The measuring device includes a measurement light source, a second optical element group and a capturing unit. The measurement light source emits at least one measurement light bundle, The second optical element group includes an optical reference element and a second optical element, which guide the measurement light bundle onto the capturing unit, to generate the capturing signal. Each second optical element has a defined spatial relationship with a respective one of the first optical elements, The second optical elements differ from the first optical elements. The measuring device determines the imaging error with the capturing signal.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A lithography method is proposed employing a projection exposure system having a catoptric imaging optics comprising a mirror formed as phase mask in the imaging beam path, wherein the mirror formed as phase mask exhibits continuous regions having dielectric layers provided thereon. Optionally, the regions of the mirror formed as phase mask are configured such that an axial extension of an image of a point (DOF) of the imaging is increased or/and a lateral extension of an image of a point of the imaging is decreased. Preferably multiple exposures of a same radiation sensitive substrate are performed in order to achieve an increase in resolution and scaling down of the manufacturing trace structures (61, 61?), respectively.

Abstract: A method for locally resolved measurement of a radiation distribution (24) produced using a lithography mask (16) comprises providing a radiation converter (31, 131) having an at least two-dimensional arrangement of converter elements (32, 132) which can respectively be put in an active and a passive state, and are configured to convert incoming radiation in respect of its wavelength in the active state. The method further includes: manipulating the radiation converter (31, 131) several times such that respectively only a fraction of the converter elements (32, 132) adopts the active state, irradiating the radiation converter (31, 131) with the radiation distribution (24) after every manipulation of the radiation converter (31, 131) so that the active converter elements (32, 132) emit wavelength-converted is measuring radiation (34), recording respective places of origin (54) of the measuring radiation at every irradiation with the radiation distribution (24).

Abstract: An objective for a projection exposure apparatus includes a metrology stage arranged on the frame of the objective. The objective includes at least one optical component, an objective mount for mounting the optical component, and a positioning device for holding at least one measuring device. The positioning device is connected to the objective mount and has at least one degree of freedom of displacement for displacing the measuring device.

Abstract: A projection arrangement for imaging lithographic structure information comprises: an optical element, which has at least partly a coating composed of an electrically conductive layer material. The coating comprises a continuous region, which has no elements that shade projection light. In this case, the layer material and/or the optical element change(s) an optical property, in particular a refractive index or an optical path length, depending on a temperature change. At least one mechanism for coupling energy into the layer material is provided, which couples in energy in such a way that the layer material converts coupled-in energy into thermal energy. The layer material may comprise graphene, chromium and/or molybdenum sulfide (MoS2).

Abstract: Measuring a shape of an optical surface (14) of a test object (12) includes: providing an interferometric measuring device (16) generating a measurement wave (18); arranging the measuring device (16) and the test object (12) consecutively at different measurement positions relative to each other, such that different regions (20) of the optical surface (14) are illuminated by the measurement wave (18); measuring positional coordinates of the measuring device (16) at the different measurement positions in relation to the test object (12); obtaining surface region measurements by interferometrically measuring the wavefront of the measurement wave (18) after interaction with the respective region (20) of the optical surface (14) using the measuring device (16) in each of the measurement positions; and determining the actual shape of the optical surface (14) by computationally combining the sub-surface measurements based on the measured positional coordinates of the measuring device (16) at each of the measurement

Abstract: An optical system, such as a microlithographic projection exposure apparatus, includes a first optical component, a second optical component, and a measurement arrangement for determining the relative position of the first optical component and the second optical component in six degrees of freedom. The measurement arrangement is adapted to determine the relative position of the first optical component and the second optical component over six different length measurement sections. The length measurement sections extend directly between the first optical component and the second optical component.