Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one sensor row (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: An optical imaging device, including an imaging unit and a measuring device. The imaging unit includes a first optical element group having at least one first optical element, which contributes to the imaging. The measuring device determines an imaging error, which occurs during the imaging, using a capturing signal. The measuring device includes a measurement light source, a second optical element group and a capturing unit. The measurement light source emits at least one measurement light bundle, The second optical element group includes an optical reference element and a second optical element, which guide the measurement light bundle onto the capturing unit, to generate the capturing signal. Each second optical element has a defined spatial relationship with a respective one of the first optical elements, The second optical elements differ from the first optical elements. The measuring device determines the imaging error with the capturing signal.

Abstract: A method for locally resolved measurement of a radiation distribution (24) produced using a lithography mask (16) comprises providing a radiation converter (31, 131) having an at least two-dimensional arrangement of converter elements (32, 132) which can respectively be put in an active and a passive state, and are configured to convert incoming radiation in respect of its wavelength in the active state. The method further includes: manipulating the radiation converter (31, 131) several times such that respectively only a fraction of the converter elements (32, 132) adopts the active state, irradiating the radiation converter (31, 131) with the radiation distribution (24) after every manipulation of the radiation converter (31, 131) so that the active converter elements (32, 132) emit wavelength-converted is measuring radiation (34), recording respective places of origin (54) of the measuring radiation at every irradiation with the radiation distribution (24).

Abstract: Measuring a shape of an optical surface (14) of a test object (12) includes: providing an interferometric measuring device (16) generating a measurement wave (18); arranging the measuring device (16) and the test object (12) consecutively at different measurement positions relative to each other, such that different regions (20) of the optical surface (14) are illuminated by the measurement wave (18); measuring positional coordinates of the measuring device (16) at the different measurement positions in relation to the test object (12); obtaining surface region measurements by interferometrically measuring the wavefront of the measurement wave (18) after interaction with the respective region (20) of the optical surface (14) using the measuring device (16) in each of the measurement positions; and determining the actual shape of the optical surface (14) by computationally combining the surface region measurements based on the measured positional coordinates of the measuring device (16) at each of the measurem

Abstract: A mirror (1a; 1a?; 1b; 1b?; 1c; 1c?) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P??) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H??) and a low refractive index layer (L??). The layer arrangement has at least one graphine layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.

Abstract: A method for locally resolved measurement of a radiation distribution (24) produced using a lithography mask (16) comprises providing a radiation converter (31, 131) having an at least two-dimensional arrangement of converter elements (32, 132) which can respectively be put in an active and a passive state, and are configured to convert incoming radiation in respect of its wavelength in the active state. The method further includes: manipulating the radiation converter (31, 131) several times such that respectively only a fraction of the converter elements (32, 132) adopts the active state, irradiating the radiation converter (31, 131) with the radiation distribution (24) after every manipulation of the radiation converter (31, 131) so that the active converter elements (32, 132) emit wavelength-converted measuring radiation (34), recording respective places of origin (54) of the measuring radiation at every irradiation with the radiation distribution (24).

Abstract: The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane, wherein the projection objective has at least one mirror segment arrangement (160, 260, 280, 310, 410, 500) comprising a plurality of separate mirror segments (161-163; 261-266, 281-284; 311, 312; 411, 412; 510-540); and wherein associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP), wherein said partial beam paths are superposed in the image plane (IP) and wherein at least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Abstract: An optical imaging device, in particular for microlithography, including an imaging unit adapted to image an object point on an image point and a measurement device. The imaging unit has a first optical element group having at least one first optical element. The imaging device is adapted to participate in the imaging of the object point on the image point, and the measurement unit is adapted to determine at least one image defect occurring on the image point when the object point is imaged. The measuring device includes at least one measurement light source, one second optical element group and at least one detection unit. The measurement light source transmits at least one measurement light bundle. The second optical element group includes at least one optical reference element and one second optical element, the elements adapted to direct the at least one measurement light bundle to the at least one detection unit, to produce at least one detection signal.

Abstract: A projection exposure tool (10) for microlithography with a measuring apparatus (36) disposed in an optical path (28) of the projection exposure tool (10) for the locally and angularly resolved measurement of an irradiation strength distribution. The measuring apparatus (36) includes a measuring field with an arrangement (56) of focusing optical elements (42) disposed at respective individual points of the measuring field (41), a common image plane (44) for the focusing optical elements (42), a locally resolving radiation detector (46) with a recording surface (48) for the locally resolved recording of a radiation intensity, the recording surface (48) being disposed in the common image plane (44), and the radiation detector outputting radiation intensity signals for a plurality of angle values indicative of a respective angularly resolved irradiation strength distribution for at least one of the individual measuring field points.

Abstract: An optical element having an optical surface (12; 103), which optical surface has an actual shape, the actual shape deviating from a desired shape by maximum 0.2 nm, wherein the desired shape is either: a free-form surface having a deviation from its best-fitting sphere of at least 5 ?m or a substantially rotationally symmetrical surface having a deviation from its best-fitting sphere of at least 0.5 mm.

Abstract: A device for measuring an imaging optical system, including: a first grating pattern (6), which is positionable in a beam path upstream of the imaging optical system, having a first grating structure (16), a second grating pattern (8), which is positionable in the beam path (4) downstream of the imaging optical system, having a second grating structure (18), and a sensor unit for the spatially resolving measurement of a superposition fringe pattern produced during the imaging of the first grating structure (16) of the first grating pattern (6) onto the second grating structure (18) of the second grating pattern (8). The first grating structure (16) differs in its correction structures (17) from the second grating structure (18).

Abstract: Measuring a shape of an optical surface (14) of a test object (12) includes: providing an interferometric measuring device (16) generating a measurement wave (18); arranging the measuring device (16) and the test object (12) consecutively at different measurement positions relative to each other, such that different regions (20) of the optical surface (14) are illuminated by the measurement wave (18); measuring positional coordinates of the measuring device (16) at the different measurement positions in relation to the test object (12); obtaining surface region measurements by interferometrically measuring the wavefront of the measurement wave (18) after interaction with the respective region (20) of the optical surface (14) using the measuring device (16) in each of the measurement positions; and determining the actual shape of the optical surface (14) by computationally combining the sub-surface measurements based on the measured positional coordinates of the measuring device (16) at each of the measurement

Abstract: A projection illumination system with a plurality of optical components (29, 32) includes an interferometer arrangement (37) whose components are arranged outside a projection beam path (17) of the projection illumination system. Measurement radiation of the interferometer arrangement strikes a surface (35) of the optical component (29) to be measured under a large angle of incidence (?). Actuators (83, 87) of the projection illumination system can be actuated as a function of a measurement radiation intensity distribution detected using the interferometer arrangement in order to change imaging characteristics of the projection illumination system and to keep them stable in particular also with respect to drifting.

Abstract: An optical system, such as a microlithographic projection exposure apparatus, includes a first optical component, a second optical component, and a measurement arrangement for determining the relative position of the first optical component and the second optical component in six degrees of freedom. The measurement arrangement is adapted to determine the relative position of the first optical component and the second optical component over six different length measurement sections. The length measurement sections extend directly between the first optical component and the second optical component.

Abstract: An optical element having an optical surface (12; 103), which optical surface has an actual shape, the actual shape deviating from a desired shape by maximum 0.2 nm, wherein the desired shape is either: a free-form surface having a deviation from its best-fitting sphere of at least 5 ?m or a substantially rotationally symmetrical surface having a deviation from its best-fitting sphere of at least 0.5 mm.

Abstract: An optical element having an optical surface (12; 103), which optical surface has an actual shape, the actual shape deviating from a desired shape by maximum 0.2 nm, wherein the desired shape is either: a free-form surface having a deviation from its best-fitting sphere of at least 5 ?m or a substantially rotationally symmetrical surface having a deviation from its best-fitting sphere of at least 0.5 mm.

Abstract: Optical element having an optical surface, which optical surface is adapted to a non-spherical target shape, such that a long wave variation of the actual shape of the optical surface with respect to the target shape is limited to a maximum value of 0.2 nm, wherein the long wave variation includes only oscillations having a spatial wavelength equal to or larger than a minimum spatial wavelength of 10 mm.

Abstract: An optical imaging device, in particular for microlithography, including an imaging unit adapted to image an object point on an image point and a measurement device. The imaging unit has a first optical element group having at least one first optical element. The imaging device is adapted to participate in the imaging of the object point on the image point, and the measurement unit is adapted to determine at least one image defect occurring on the image point when the object point is imaged. The measuring device includes at least one measurement light source, one second optical element group and at least one detection unit. The measurement light source transmits at least one measurement light bundle. The second optical element group includes at least one optical reference element and one second optical element, the elements adapted to direct the at least one measurement light bundle to the at least one detection unit, to produce at least one detection signal.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: Optical element having an optical surface, which optical surface is adapted to a non-spherical target shape, such that a long wave variation of the actual shape of the optical surface with respect to the target shape is limited to a maximum value of 0.2 nm, wherein the long wave variation includes only oscillations having a spatial wavelength equal to or larger than a minimum spatial wavelength of 10 mm.