Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: A redistribution pattern is formed on active surfaces of electronic components while still in wafer form. The redistribution pattern routes bond pads of the electronic components to redistribution pattern terminals on the active surfaces of the electronic components. The bond pads are routed to the redistribution pattern terminals while still in wafer form, which is a low cost and high throughput process, i.e., very efficient process.

Abstract: In accordance with the present invention, there is provided a routable substrate that may be used, for example, in relation to the manufacture of Dual and Quad Flat No-Lead (DFN/QFN) style semiconductor packages as a substrate or interposer of such packages. The method of fabricating the substrate effectively removes metal from the saw streets and provides a more stable surface structure for wire bonding. The substrate fabrication method also utilizes existing etching techniques which are implemented in a prescribed sequence to achieve no metal in the saw streets and to completely electrically isolated features. Further, the substrate fabrication method includes a molding step intended to replace pressure sensitive adhesive tapes.

Abstract: A method and structure provides a Direct Write Wafer Level Chip Scale Package (DWWLCSP) that utilizes permanent layers/coatings and direct write techniques to pattern these layers/coatings, thereby avoiding the use of photoimagable materials and photo-etching processes.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: A method includes forming through vias in a substrate of an array. Nubs of the through vias are exposed from a backside surface of the substrate. A backside passivation layer is applied to enclose the nubs. Laser-ablated artifacts are formed in the backside passivation layer to expose the nubs. Circuit features are formed within the laser-ablated artifacts. By forming the circuit features within the laser-ablated artifacts in the backside passivation layer, the cost of fabricating the array is minimized. More particularly, the number of operations to form the embedded circuit features is minimized thus minimizing fabrication cost of the array.

Abstract: A shielded embedded electronic component substrate includes a core dielectric layer having a die opening. An electrically conductive die shield lines the die opening. An electronic component is mounted within the die opening and to the die shield, where the die shield shields the electronic component. By mounting the electronic component within the die opening, the shielded embedded electronic component substrate is made relatively thin. Further, heat generated by the electronic component is dissipated to the die shield and to the ambient environment. Accordingly, the shielded embedded electronic component substrate is well suited for use when the electronic component generates a significant amount of heat, e.g., in high power applications.

Abstract: A method of fabricating a bumped chip package includes forming a first seed layer on a dielectric layer, the dielectric layer comprising a dielectric layer opening exposing a substrate terminal of a substrate, the first seed layer being formed within the dielectric layer opening and on the substrate terminal. A circuit pattern is plated on the first seed layer, wherein an exposed portion of the first seed layer is exposed from the circuit pattern. The exposed portion of the first seed layer is removed by laser-ablation. By using a laser-ablation process, a chemical etching process is avoided thus eliminating the need to treat or dispose of chemical etching hazardous waste. Further, circuit pattern width erosion and undercut of the circuit pattern associated with a chemical etching process are avoided.

Abstract: A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump.

Abstract: A stacked assembly includes a stacked structure stacked on a through via recessed reveal structure. The through via recessed reveal structure includes recesses within a backside surface of an electronic component that expose backsides of through vias. Pillars of the stacked structure are attached to the exposed backsides of the through vias through the recesses. The recesses in combination with the pillars work as a lock and key arrangement to insure self-alignment of the pillars with the backsides of the through vias allowing fine pitch interconnections to be realized. Further, by forming the interconnections to the backsides of the through vias within the recesses, the overall thickness of the stacked assembly is minimized. Further still, by forming the interconnections to the backsides of the through vias within the recesses, shorting between adjacent through vias is minimized or eliminated.

Abstract: A first patterned etch stop layer and a first patterned conductor layer are laminated by a dielectric material to a second patterned etch stop layer and a second patterned conductor layer. As the etch stop metal of the first and second patterned etch stop layers is selectively etchable compared to a conductor metal of the first and second patterned conductor layers, the first and second patterned etch stop layers provide an etch stop for substrate formation etch processes. In this manner, etching of the first and second patterned conductor layers is avoided insuring that impedance is controlled to within tight tolerance.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method includes applying a backside passivation layer to an inactive surface of an electronic component and to enclose a through via nub protruding from the inactive surface. The method further includes laser ablating the backside passivation layer to reveal a portion of the through via nub. The backside passivation layer is formed of a low cost organic material. Further, by using a laser ablation process, the backside passivation layer is removed in a controlled manner to reveal the portion of the through via nub. Further, by using a laser ablation process, the resulting thickness of the backside passivation layer is set to a desired value in a controlled manner. Further, by using a laser ablation process, the fabrication cost is reduced as compared to the use of chemical mechanical polish.

Abstract: A capture pad structure includes a first dielectric layer. A trace is embedded within the first dielectric layer. A capture pad is also embedded within the first dielectric layer, the capture pad being an end portion of the trace. A blind via aperture extends partially through the first dielectric layer from a principal surface of the first dielectric layer to the capture pad. By forming the capture pad as the end portion of the trace, formation of the capture pad requires no change in direction or complex motion of the laser.

Abstract: A method of making a substrate for a semiconductor package includes providing a laminated layer structure including a backing layer and a metal layer attached to the backing layer. A circuit layer is plated atop a first surface of the metal layer to form a circuit-on-metal structure. The circuit-on-metal structure is coupled to a dielectric layer by causing the dielectric layer to flow around the circuit layer to the first surface of the metal layer so that the circuit layer is embedded within the dielectric layer and the first surface of the metal layer is in direct contact with a first surface of the dielectric layer. The backing layer is then removed completely. The metal layer is then removed completely.

Abstract: A method of making a semiconductor package substrate includes laser-ablating channels in the substrate. After the channels are ablated in the substrate, conductive material is added to fill the channels and cover the surface of the substrate. Then a photomask etching process simultaneously forms a circuit pattern above the surface of the substrate and removes excess metal above the channels, by removing metal above the surface only in patterned regions. The result is a two-level circuit pattern having conductors within and above the substrate.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: A method of fabricating a bumped chip package includes forming a first seed layer on a dielectric layer, the dielectric layer comprising a dielectric layer opening exposing a substrate terminal of a substrate, the first seed layer being formed within the dielectric layer opening and on the substrate terminal. A circuit pattern is plated on the first seed layer, wherein an exposed portion of the first seed layer is exposed from the circuit pattern. The exposed portion of the first seed layer is removed by laser-ablation. By using a laser-ablation process, a chemical etching process is avoided thus eliminating the need to treat or dispose of chemical etching hazardous waste. Further, circuit pattern width erosion and undercut of the circuit pattern associated with a chemical etching process are avoided.

Abstract: A semiconductor package including a top-surface metal layer for implementing circuit features provides improvements in top-surface interconnect density, more flexible routing and mounting of top surface semiconductor packages, dies and passive components or a conformal shield cap implementation. The metal layer interconnected with an internal substrate of the semiconductor package by blind vias laser-ablated through the encapsulation and filled with metal. The vias extend from the top surface to an internal package substrate or through the encapsulation to form bottom-side terminals. The metal layer may be formed by circuit patterns and/or terminals embedded within the encapsulation conformal to the top surface by laser-ablating channels in the top surface of the encapsulation and filling the channels with metal. A conformal coating may be applied to the top surface of the semiconductor package over the metal layer to prevent solder bridging to circuit patterns of the metal layer.

Abstract: A method and structure provides a Direct Write Wafer Level Chip Scale Package (DWWLCSP) that utilizes permanent layers/coatings and direct write techniques to pattern these layers/coatings, thereby avoiding the use of photoimagable materials and photo-etching processes.