Abstract: A resin composition includes an epoxy resin, a benzoxazine resin, a BMI resin, and a modified polyphenylene ether resin has a structure represented by the following formula: wherein R represents a chemical group of a bisphenol compound located between two hydroxyphenyl functional groups, and n is an integer ranging from 3 to 25.

Abstract: A resin composition includes CE resin, BMI resin, and a modified polyphenylene ether resin has a following general formula: wherein R represents a chemical group of a bisphenol compound located between two hydroxyphenyl functional groups thereof, and n is an integer ranging from 3 to 25.

Abstract: A resin composition is provided, which includes diamine, a BMI resin, and a modified polyphenylene ether resin having a following structural formula: wherein R represents a chemical group of a bisphenol compound located between two hydroxyphenyl functional groups thereof, and n is an integer ranging from 3 to 25.

Abstract: A resin composition includes SBS resin, BMI resin, a crosslinking agent, and a modified polyphenylene ether resin has a following general formula: wherein R represents a chemical group of a bisphenol compound located between two hydroxyphenyl functional groups thereof, and n is an integer ranging from 3 to 25.

Abstract: A display device includes a display panel, a backlight module and a circuit. The display panel includes multiple regions. The back light module includes multiple light emitting units, and each region corresponds to at least one of the light emitting units. The circuit includes a calibration lookup table corresponding to a first light emitting unit. The calibration lookup table records a parameter and multiple duty cycles. The circuit accesses the calibration lookup table and determines an output duty cycle according to the duty cycles. The circuit determines a current value of the first light emitting unit to drive the first light emitting unit according to the output duty cycle and the parameter.

Abstract: Touch display device includes a first touch electrode, a second touch electrode, and a first touch signal line. First touch electrode is located in a first area of touch display device and is configured to receive a first control signal to generate a first touch signal. Second touch electrode is located in a second area of touch display device and is configured to receive a second control signal to generate a second touch signal. First area is adjacent to second area without overlapping. First touch signal line is coupled to first touch electrode and second touch electrode. First touch signal line is configured to transmit first touch signal of first area at a first stage. First touch signal line is configured to transmit a common electrode signal at a second stage. First touch signal line is configured to transmit second touch signal of second area at a third stage.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A CMOS-MEMS humidity sensor includes a complementary metal oxide semiconductor (CMOS) ASIC readout circuit and a microelectromechanical system (MEMS) humidity sensor. The MEMS humidity sensor is provided on the ASIC readout circuit. The ASIC readout circuit includes a substrate, a heating resistor layer located above the substrate, a metal layer located above the heating resistor layer, and dielectric layers. The substrate, the heating resistor layer, and the metal layer are partitioned by dielectric layers. The MEMS humidity sensor includes an aluminum electrode layer, a passivation layer located above the aluminum electrode layer, and a humidity sensitive layer located above the passivation layer. The provision of heating resistors in the ASIC circuit realizes the heating function and satisfies the requirements of the standard CMOS process, so that the CMOS-MEMS integrated humidity sensor can be used stably under low temperature and high humidity conditions.

Abstract: A resin composition is provided, which includes a novel low-dielectric resin, a cross-linking agent, a polyphenylene ether resin, a halogen-free flame retardant, a spherical silica, and a siloxane coupling agent. The novel low-dielectric resin has a styrene proportion of 10% to 40%, a divinylbenzene proportion of 10% to 40%, and an ethylene proportion of 10% to 20%, which may effectively reduce the dissipation factor of the resin composition, and achieve the electrical specification of low dielectric.

Abstract: A resin composition is provided. The resin composition includes a resin mixture, a flame retardant, a spherical silica and a siloxane coupling agent. The resin mixture includes a first resin polymerized by a monomer mixture including styrene, divinylbenzene and ethylene, a second resin including a polyphenylene ether resin modified by bismaleimide, and a SBS resin. The resin composition of the present disclosure can have a high glass transition temperature, a low dielectric constant and a low dissipation factor.

Abstract: A micro light-emitting diode display device and a micro light-emitting diode structure. The micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels, the display pixels are arranged on the circuit substrate and are electrically connected with the circuit substrate individually. Each display pixel includes a plurality of series-connection structures, and the light wavelengths of the series-connection structures are different. Each series-connection structure includes at least two micro light-emitting elements, and the light wavelengths of the at least two micro light-emitting elements are within a wavelength range of one color light. The circuit substrate provides a driving voltage to drive the series-connection structures of each display pixel.

Abstract: A resin composition is provided. The resin composition includes a resin and an inorganic filler. The resin includes a bismaleimide resin and a polyphenylene ether resin. The inorganic filler includes a first inorganic filler and a second inorganic filler. An average particle size of the first inorganic filler is 0.3 ?m to 0.6 ?m. An average particle size of the second inorganic filler is 20 ?m to 50 ?m.

Abstract: A resin composition and use thereof, wherein the resin composition includes a resin base, an inorganic filler and a siloxane coupling agent. The resin base includes bismaleimide resins, benzoxazine resins, and naphthenic epoxy resins, and the inorganic filler includes strontium titanate or calcium-doped strontium titanate.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A resin composition is provided. The resin composition includes a resin mixture, a flame retardant, spherical silica and a siloxane coupling agent. The resin mixture includes a first resin polymerized by a monomer mixture comprising styrene, divinylbenzene and ethylene, a second resin polymerized by modified dicyclopentadiene diamine and maleic anhydride, and a SBS resin. The resin composition of the disclosure may have a high glass transition temperature and a low dielectric constant and a low dissipation factor after curing.

Abstract: A resin composition including a modified maleimide resin is provided. The modified maleimide resin is formed from a dicyclopentadiene (DCPD)-based resin having an amino group and a maleic anhydride by a condensation polymerization. The dicyclopentadiene-based resin having an amino group is formed by nitration reaction and hydrogenation reaction of dicyclopentadiene phenolic resin.

Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a plurality of channel holes penetrating the alternating dielectric stack; forming a channel structure in each channel hole; forming a channel column structure on the channel structure in each channel hole; trimming an upper portion of each channel column structure to form a channel plug; and forming a top selective gate cut between neighboring channel plugs.

Abstract: A resin composition is provided, which includes a novel low dielectric resin, a SBS resin, a cross-linking agent, a PPE resin, a halogen-free flame retardant, a spherical silica, and a siloxane coupling agent. The novel low dielectric resin is a maleimide resin. With the formula, the resin composition may improve resin fluidity and glass transition temperature (Tg) while maintaining low dielectric, thereby enhancing the overall processability.

Abstract: A composite material substrate includes an inorganic filler, a resin composition, and a dispersant. The resin composition includes a bismaleimide resin, a naphthalene ring-containing epoxy resin, and a benzoxazine resin. The inorganic filler, the resin composition, and the dispersant are mixed together.

Abstract: The invention provides a high thermal conductivity fluororesin composition and products thereof. The high thermal conductivity fluororesin composition includes a polytetrafluoroethylene resin, a fluorine-containing copolymer, spherical inorganic fillers and impregnation aids.