Abstract: In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across an upper surface of the N-type buried diffusion layer over a wide range to form a PN junction region for an overvoltage protection. A P-type diffusion region is formed so as to be connected to the P-type buried diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. This structure makes it possible to prevent a concentration of a breakdown current and protect the semiconductor device from an overvoltage.

Abstract: A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.

Abstract: An anchor device manufacturable at a low cost which is installed in a terminal connecting device for optical fibers of an optical cable using a loose tube type unit, and configured to anchor optical fibers by inserting a hot-melt type bonding agent having a form of a tube and a support rod having a form of an elongated rod into a hollow portion of a hollow heat-shrinkable tube, inserting terminal portions of a plurality of optical fibers inserted in an optical cable into a hole of the hot-melt type bonding agent, heating terminal portions of the optical fibers and reducing a diameter of a heat-shrinkable tube so that the hot-melt type bonding agent bonds the optical fibers and the support rod, and integrates the optical fibers and the support rod also with the heat-shrinkable tube to form an anchor portion after temperature drop, and fixing a calking sleeve fixed to a left end of the support rod to a fixed portion of the terminal connecting device.

Abstract: A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to each other; the cathode region of the diode and the collector region of a power NPN transistor are electrically connected to each other. Accordingly, the dividing region in the first island region having a horizontal PNP transistor becomes lower in potential than the dividing regions in the other island regions, so that the inflow of free carriers (electrons) to the horizontal PNP transistor can be prevented.

Abstract: A semiconductor integrated circuit device according to the present invention includes an N-type embedded diffusion region between a substrate and an epitaxial layer in first and second island regions serving as small signal section. The N-type embedded diffusion region connects to N-type diffusion regions having supply potential. The substrate and the epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.

Abstract: A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.

Abstract: An anchor device manufacturable at a low cost which is installed in a terminal connecting device for optical fibers of an optical cable using a loose tube type unit, and configured to anchor optical fibers by inserting a hot-melt type bonding agent having a form of a tube and a support rod having a form of an elongated rod into a hollow portion of a hollow heat-shrinkable tube, inserting terminal portions of a plurality of optical fibers inserted in an optical cable into a hole of the hot-melt type bonding agent, heating terminal portions of the optical fibers and reducing a diameter of a heat-shrinkable tube so that the hot-melt type bonding agent bonds the optical fibers and the support rod, and integrates the optical fibers and the support rod also with the heat-shrinkable tube to form an anchor portion after temperature drop, and fixing a calking sleeve fixed to a left end of the support rod to a fixed portion of the terminal connecting device.