Abstract: Methods of programming a non-volatile memory device including N string selection lines, a word line, first and second bit line groups are provided. The method may include sequentially programming first memory cells that are connected to the word line and at least one bit line included in the first bit line group by sequentially selecting the N string selection lines in response to sequentially applied first to N-th addresses, and then sequentially programming second memory cells that are connected to the word line and at least one bit line included in the second bit line group by sequentially selecting one of the N string selection lines in response to sequentially applied N+1-th to 2N-th addresses.

Abstract: A non-volatile memory device having a memory chip is provided. The memory chip having a memory cell array including a plurality of memory planes sharing a pad, the pad configured to communicate input and output signals. The memory chip also having a control circuit configured to monitor operations of the plurality of memory planes, and control an operation of at least one of the plurality of memory planes based on a result of the monitoring such that peak power intervals of the plurality of memory planes are at least partially distributed.

Abstract: The present disclosure relates to a phosphorus compound represented by the following Chemical Formula 1. In the above Chemical Formula 1, Ar is aryl and R1, R2, R3, R4, R5, and R6 are each independently H, substitutable linear or branched C1-C20 alkyl and substitutable C6-C20 aryl, the aryl includes a member selected from the group consisting of phenyl, biphenyl, naphthalene, fluorene, anthracene, phenanthrene, pyrene, fluoranthen, chrysene, benzofluoranthen, perylene, quinoline, indenoanthracene, indenophenanthrene, hydroanthracene, dibenzothiophen, dibenzofuran, and combinations thereof, and the substitution is substitution with C1-C6 alkyl or C6-C20 aryl, but may not be limited thereto.

Abstract: A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.

Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids.

Abstract: A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.

Abstract: A nonvolatile memory device includes a memory cell array and a bad block remapping circuit. The memory cell array includes a first mat and a second mat that are paired with each other. The first mat includes a plurality of first memory blocks. The second mat includes a plurality of second memory blocks. A first selection memory block among the plurality of first memory blocks and a second selection memory block among the plurality of second memory blocks are accessed based on a first address. The bad block remapping circuit generates a first remapping address based on the first address when it is determined that the first selection memory block is defective. A first remapping memory block among the plurality of first memory blocks and the second selection memory block are accessed based on the first remapping address.

Abstract: The present invention provides a method of carbonating carbon dioxide with high purity using a paper mill waste sludge by preparing a paper mill waste sludge which is a waste product discharged during the production of papermaking, adding acid to the paper mill waste sludge and reacting the acid therewith to produce a mixed solution and stirring, separating a supernatant of the mixed solution into an eluate, adding a basic substance to the eluate and adjusting pH to precipitate some of the ions in the eluate, and then adding a reaction initiator to the eluate in which some ions are precipitated and removed, and injecting carbon dioxide for a carbonation reaction.

Abstract: Methods of programming a non-volatile memory device including N string selection lines, a word line, first and second bit line groups are provided. The method may include sequentially programming first memory cells that are connected to the word line and at least one bit line included in the first bit line group by sequentially selecting the N string selection lines in response to sequentially applied first to N-th addresses, and then sequentially programming second memory cells that are connected to the word line and at least one bit line included in the second bit line group by sequentially selecting one of the N string selection lines in response to sequentially applied N+1-th to 2N-th addresses.

Abstract: The present disclosure relates to a 5G or pre-5G communication system that will be provided to support a higher data transmission rate beyond a 4G communication system such as LTE. Disclosed is an interference measurement method and device in a flexible duplex system. The method comprises the steps of: determining whether uplink (UL) grant for allocating UL transmission has been received from a base station in a first subframe; when the UL grant has not been received, measuring inter-cell interference for an uplink interference measurement resource (IMR) in at least one second subframe determined by the first subframe; and when the UL grant has been received, measuring inter-cell interference for the uplink interference measurement resource (IMR) in at least one third subframe before a subframe that is indicated by the UL grant.

Abstract: A nonvolatile memory device includes a cell string having a plurality of memory cells connected to one bit line. A page buffer is connected to the bit line via a sensing node and connected to the cell string via the bit line. The page buffer includes a first latch for storing bit line setup information and a second latch for storing forcing information. The first latch is configured to output the bit line setup information to the sensing node, and the second latch is configured to output the forcing information to the sensing node independently of the first latch.

Abstract: A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.

Abstract: The present invention is directed to methods for capturing, amplifying and identifying one or more of a plurality of target nucleotide sequences in a sample. The present invention is further directed to a device comprising a solid support having a plurality of wells or pillars and a plurality of oligonucleotides attached to the wells or pillars. Other aspects of the invention are directed to methods of making such devices.

Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

Abstract: Disclosed herein is a method for predicting a chlorophyll-a concentration in a river using satellite image data and a nonlinear RANSAC method. In detail, the method includes (1) receiving a chlorophyll-a concentration, which was actually measured at a measurement station at a prescribed basin and an image from a satellite on a same date and at a same site as when and where the chlorophyll-a concentration was measured at the measurement station, (2) correcting a distortion of the image received from the satellite, (3) applying the chlorophyll-a concentration actually measured at the measurement station and data of the corrected satellite image to a nonlinear RANSAC method to extract a second-order function, and (4) inputting corrected data of a satellite image collected at the prescribed basin to the extracted second-order function to predict a chlorophyll-a concentration at the prescribed basin.

Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

Abstract: A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.

Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids.