Abstract: The beam irradiation apparatus is featured by including a transport pipe which is vacuum-evacuated to be used as a transport channel of a beam taken out from an accelerator, a quadrupole magnet which modulates the beam diameter of the beam so that the beam is incident on an irradiation target existing in the atmosphere while maintaining the focusing angle of the beam, and one or more longitudinally movable range shifters which are provided to be capable of changing the distance to the irradiation target of the beam, and which modulate the beam range by reducing the energy of the beam by allowing the beam to pass through the movable range shifter, and is featured in that the beam is irradiated onto the irradiation target by modulating the beam diameter and the beam range.

Abstract: An anti-fuse device includes a gate electrode on a semiconductor substrate, a gate insulating layer between the semiconductor substrate and the gate electrode, junction regions in the semiconductor substrate adjacent the gate electrode, and at least one anti-breakdown material layer between the junction regions, the gate insulating layer being between the gate electrode and the anti-breakdown material layer.

Abstract: A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part o the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.

Abstract: A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate; forming a gate electrode on the gate dielectric layer; forming an etch stop layer on the gate electrode; forming a capacitor on the semiconductor substrate adjacent to the gate electrode; after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode; and, diffusing deuterium into the gate dielectric layer through the contact hole.

Abstract: A semiconductor device includes a substrate including a memory cell region and a peripheral region and a field pattern including an insulating region disposed on a nitride liner in a trench in the substrate adjacent an active region. The field pattern and the active region extend in parallel through the cell and peripheral regions. The device also includes a transistor in the peripheral region including a source/drain region in the active region. The device further includes an insertion pattern including an elongate conductive region disposed in the substrate and extending along a boundary between the field pattern and the active region in the peripheral region. Fabrication methods are also described.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a first node impurity region, a second node impurity region, a third node impurity region, and an insulating layer. The first through third node impurity regions are disposed in the semiconductor substrate. Each of the first through third node impurity regions has a longitudinal length, a transverse length and a thickness respectively corresponding to first through third directions, which are perpendicular with respect to each other. The first node impurity region is parallel to the second and third node impurity regions, which are disposed in the substantially same line. The insulating layer is located between the first through third node impurity regions in the semiconductor substrate.

Abstract: A printer driver includes an assigning unit that assigns a setting value based on storage location information specifying a storage location for each setting value; a compressing unit that converts each of the setting values thus assigned to have a format identifying each storage location, and generates compressed data therefrom; a storage unit that stores each piece of the compressed data compressed by the compressing unit in a storage location specified by the storage location information; a first decompressing unit and a second decompressing unit that decompress the compressed data stored in the storage location; a setting window displaying unit that displays a print setting window using each of the setting values obtained by decompression performed by the first decompressing unit; and a print data generating unit that generates print data using each of the setting values obtained by decompression performed by the second decompressing unit.

Abstract: A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part o the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.

Abstract: To suppress an excessive reduction in resistance of an electro-conductive roller under an H/H environment and reduce a resistance value thereof under an L/L environment, provided is an electro-conductive member for electrophotography, comprising: an electro-conductive mandrel; and an electro-conductive layer provided on a periphery of the mandrel, wherein the electro-conductive layer contains a binder resin having an alkylene oxide structure, and a sulfo or a quaternary ammonium group as an ion exchange group, and an ion having polarity opposite to polarity of the ion exchange group, a water content of the electro-conductive layer under a temperature of 30° C. and a relative humidity of 80% is 10 mass % or less, and a spin-spin relaxation time of the electro-conductive layer, which is determined by pulse NMR measurement with a hydrogen core being a measurement core under a temperature of 15° C. and a relative humidity of 10%, is 200 ?sec or more.

Abstract: A semiconductor device including an isolation layer structure including a doped polysilicon layer pattern doped with first and second impurities of first and second conductivity types at lower and upper portions thereof, the doped polysilicon layer pattern being on an inner wall of a first trench on a substrate including an active region in which the first trench is not formed and a field region including the first trench, and an insulation structure filling a remaining portion of the first trench; a gate structure on the active region; a well region at a portion of the active region adjacent to lower portions of the doped polysilicon layer pattern and being doped with third impurities of the second conductivity type; and a source/drain at a portion of the active region adjacent to upper portions of the doped polysilicon layer pattern and being doped with fourth impurities of the first conductivity type.

Abstract: To provide an electrically conducting member for electrophotography which can not easily come to change in electrical resistance value even upon application of direct current and also has made any ion conducting agent kept from bleeding. The electrically conducting member has an electrically conducting substrate and an electrically conducting layer; the electrically conducting layer containing an epichlorohydrin rubber having in the molecular structure at least an alkylene oxide (AO) unit, an epichlorohydrin (ECH) unit and a unit having a sulfonate ion; the AO unit being at least one unit of an ethylene oxide unit, a propylene oxide unit and a butylene oxide unit; and the AO unit(s) in the rubber being in a content of 5 to 60% by mass in total and the ECH unit in the rubber being in a content of 30% by mass or more.

Abstract: A semiconductor memory device includes a bit line connected to a memory cell; an input/output line configured to input a data signal to the memory cell during a writing operation and to output a data signal stored in the memory cell during a reading operation; and a column select transistor including a first source/drain connected to the bit line and a second source/drain connected to the input/output line, wherein a resistance of the first source/drain is smaller than a resistance of the second source/drain.

Abstract: To provide an electrically conducting member for electrophotography that has made itself kept from increasing in electrical resistance with time even in a low temperature and low humidity environment and also has made any ion conducting agent kept from bleeding to its surface. To also provide a process cartridge, and an electrophotographic image forming apparatus, that can stably form high-grade electrophotographic images over a long period of time in a variety of environments. The conductive member for electrophotography has an electrically conducting substrate and an electrically conducting layer, and the electrically conducting layer contains a resin having in the molecule at least one structure selected from structures represented by the formula (1), formula (2) and formula (3) each defined in the specification. The process cartridge and the electrophotographic image forming apparatus each make use of the same.

Abstract: A fabric, a fabric manufacturing method and a vehicle seat are provided. The fabric has one surface and an opposite surface, and includes a constituent yarn having at least an elastic yarn; and a chenille yarn having a core yarn and a pile yarn. At least one kind of yarn of the constituent yarn is shaped in a waveform as seen from a sectional direction of the fabric. The core yarn is located closer to the opposite surface than an imaginary line, the imaginary line being formed by connecting each of peaks of mountain portions of the waveform in the one surface.

Abstract: Semiconductor memory devices may include a write transistor including a first write gate controlling a first source/drain terminal and a second write gate controlling a channel region, and a read transistor including a memory node gate connected to the first source/drain terminal of the write transistor. The first write gate may have a first work function and the second write gate may have a second work function different from the first work function. The first source/drain terminal of the write transistor may not have a PN junction.

Abstract: A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.

Abstract: According to an example embodiment of inventive concepts, a capacitorless memory device includes a capacitorless memory cell that includes a bit line on a substrate; a read transistor, and a write transistor. The read transistor may include first to third impurity layers stacked in a vertical direction on the bit line. The first and third layers may be a first conductive type, and the second impurity layer may be a second conductive type that differs from the first conductive type. The write transistor may include a source layer, a body layer, and a drain layer stacked in the vertical direction on the substrate, and a gate line that is adjacent to a side surface of the body layer. The gate line may be spaced apart from the side surface of the body layer. The source layer may be adjacent to a side surface of the second impurity layer.

Abstract: To suppress an excessive reduction in resistance of an electro-conductive roller under an H/H environment and reduce a resistance value thereof under an L/L environment, provided is an electro-conductive member for electrophotography, comprising: an electro-conductive mandrel; and an electro-conductive layer provided on a periphery of the mandrel, wherein the electro-conductive layer contains a binder resin having an alkylene oxide structure, and a sulfo or a quaternary ammonium group as an ion exchange group, and an ion having polarity opposite to polarity of the ion exchange group, a water content of the electro-conductive layer under a temperature of 30° C. and a relative humidity of 80% is 10 mass % or less, and a spin-spin relaxation time of the electro-conductive layer, which is determined by pulse NMR measurement with a hydrogen core being a measurement core under a temperature of 15° C. and a relative humidity of 10%, is 200 ?sec or more.

Abstract: A charged particle beam extraction method according to the present invention is featured in that, in a circular accelerator which accelerates a charged particle beam, a pulse voltage is applied to a part of the accelerated charged particle beam to generate a momentum deviation only in the part of the charged particle beam, in that the charged particles of a part of the charged particle beam, the charged particles having a large momentum deviation, are located in a non-stable region and in an extraction region in a horizontal phase space with respect to the traveling direction of the charged particle beam, and in that a group of the charged particles located in the non-stable region and in the extraction region are largely deviated in the horizontal direction so as to be extracted.