Abstract: Provided are semiconductor devices and methods of forming the same. In the semiconductor devices and methods of forming the same, different insulating patterns are disposed around a cell gate pattern and a peripheral gate pattern to impose different heat budgets around the cell gate pattern and the peripheral gate pattern. For this purpose, a semiconductor substrate having a cell array region and a peripheral circuit region is prepared. First and second cell gate patterns are disposed in the cell array region. A peripheral gate pattern is disposed in the peripheral circuit region to be to adjacent to the second cell gate pattern. Buried insulating patterns are disposed around the first and second cell gate patterns. Planarization insulating patterns are disposed around the peripheral gate pattern.

Abstract: A printer driver includes an assigning unit that assigns a setting value based on storage location information specifying a storage location for each setting value; a compressing unit that converts each of the setting values thus assigned to have a format identifying each storage location, and generates compressed data therefrom; a storage unit that stores each piece of the compressed data compressed by the compressing unit in a storage location specified by the storage location information; a first decompressing unit and a second decompressing unit that decompress the compressed data stored in the storage location; a setting window displaying unit that displays a print setting window using each of the setting values obtained by decompression performed by the first decompressing unit; and a print data generating unit that generates print data using each of the setting values obtained by decompression performed by the second decompressing unit.

Abstract: A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.

Abstract: A linearity of a voltage change to a tuner insertion amount is verified for at least one of a plurality of tuners. Based on the voltage change linearity, individual voltage change data corresponding to respective insertion amounts are calculated for each of the plurality of tuners through a proportional calculation. A combination of auto-tuners and a combination of respective insertion amounts of the auto-tuners are determined using the individual voltage change data, and an adequacy of the determined combinations is verified through a direct three-dimensional electromagnetic field calculation. The combinations are determined on a condition that, when the individual voltage change data of nominated tuners are added together, respective voltage changes attributed to the nominated tuners are cancelled out to allow an entire voltage distribution to have substantially no change.

Abstract: Provided are semiconductor devices and methods of forming the same. In the semiconductor devices and methods of forming the same, different insulating patterns are disposed around a cell gate pattern and a peripheral gate pattern to impose different heat budgets around the cell gate pattern and the peripheral gate pattern. For this purpose, a semiconductor substrate having a cell array region and a peripheral circuit region is prepared. First and second cell gate patterns are disposed in the cell array region. A peripheral gate pattern is disposed in the peripheral circuit region to be adjacent to the second cell gate pattern. Buried insulating patterns are disposed around the first and second cell gate patterns. Planarization insulating patterns are disposed around the peripheral gate pattern.

Abstract: An object of the present invention relates to provide an ethylene polymer having excellent mechanical strength and excellent molding processability in a wide molding processing temperature range. The invention relates to use an ethylene polymer comprising a repeating unit derived from ethylene, or a repeating unit derived from ethylene and a repeating unit derived from a C3-8 ?-olefin, the ethylene polymer being satisfied with the following (A) to (F). (A) Density (d (kg/m3)) is from 910 to 970, (B) MFR (g/10 min)) is from 0.01 to 50, (C) terminal vinyl number is 0.2 or less per 1,000 carbon atoms, (D) melt strength (MS160 (mN)) measured at 160° C. and MFR are satisfied with MS160>90?130×log(MFR), (E) melt strength (MS190 (mN)) measured at 190° C. and MS160 are satisfied with MS160/MS190<1.8, and (F) fluidized activation energy (Ea (kJ/mol)) and d are satisfied with 127?0.107d<Ea<88?0.060d.

Abstract: A print information processing apparatus for performing a printing process is disclosed. The print information processing apparatus is connected to a printer via a network and includes an interface configured to connect a removable recording medium; a data storage unit configured to store encrypted data; a decryption unit configured to read decryption information used to decrypt the encrypted data from the removable recording medium connected to the interface and to decrypt the encrypted data by using the decryption information. In the print information processing apparatus, the decryption unit permits the printing process of the encrypted data only when the removable recording medium is connected to the interface.

Abstract: A means capable of supplying exhaust gas sufficiently imitating exhaust gas from actual diesel engines is provided. A PM generating apparatus has a constitution in which combustion air supplied to the space between a chassis and an outer casing via an air inlet is introduced into the space between the outer casing and an inner casing via through-holes of the outer casing, and a fuel injected by an fuel-injection means into the space between the chassis and the outer casing is introduced into the space between the outer casing and the inner casing via the through-holes of the outer casing, wherein the fuel is combusted to generate PM.

Abstract: In order to attain an object to realize an ion beam capable of (i) immediately determining energy of the ion beam to be generated, and (ii) measuring an ion beam in real time while carrying out laser irradiation, an ion beam detector (1) of the present invention includes a light conversion section (7) transmitting X-rays mixed in with ions (3) and converting the ions (3) to light; a light detection section (9) detecting, as an electric signal, the light converted from the ions (3) by the light converting section (7); a time-of-flight measurement section (10) measuring a time of flight for the ions (3) to reach the light conversion section (7); an electron removal section (5) removing electrons mixed in with the ions (3) and a light shielding section (6) shielding light mixed in with the ions (3), each of which is provided in an upstream of the light conversion section from which the ion beam comes to the light conversion section; and a curved section (8) between the light conversion section (7) and the light

Abstract: A curable resin composition for intraocular lens is provided, the curable resin composition including: (a) a first monomer selected from compounds represented by formula (I); (b) a polyfunctional second monomer; and (c) a radical polymerization initiator: wherein R1 represents a hydrogen atom or an alkyl group; X1 represents an oxygen atom or a sulfur atom; when X1 represents a sulfur atom, X2 represents CR2 where R2 represents a hydrogen atom or an alkyl group; when X1 represents an oxygen atom, X2 represents C?O; R3 to R5 each represents a hydrogen atom, an alkyl group, an aryl group, a hetero ring group, an alkoxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkoxycarbonyl group, an aryloxycarbonyl group, an acyloxy group, an arylcarbonyloxy group, an acylamino group, a sulfonylamino group, an amino group, an acyl group or a halogen atom; and n represents 0 or 1.

Abstract: A method for manufacturing a DRAM device on a silicon substrate includes: forming cell transistors in a memory cell area and other transistors in a peripheral circuit area; forming polysilicon plugs connected to diffused regions of the cell transistors and metallic plugs connected to diffused regions of the other transistors; heat treating at a temperature of 980 to 1,020 degrees C.; heat treating at a temperature of 700 to 850 degrees C.; implanting fluorine or boron fluoride into the diffused regions of the other transistors; and heat treating at a temperature of 500 to 850 degrees C.

Abstract: A polyethylene composition prepared by polymerizing ethylene and an optional olefin with ?3 carbon atoms in the presence of a macromonomer, is provided. The macromonomer is a vinyl-terminated ethylene polymer prepared by polymerizing ethylene and an optional olefin with ?3 carbon atoms, and the macromonomer has (A) Mn?5,000, and Mw/Mn=2-5. The polyethylene composition comprises (C) branched polyethylene prepared by copolymerizing ethylene, the macromonomer and an optional olefin with ?3 carbon atoms, and the macromonomer. The polyethylene composition has (D) a density of 0.890-0.980 g/cm3, (E) Mw=30,000-10,000,000, (F) Mw/Mn=2-30, (G) a long chain branch frequency of 0.01-3 per 1,000 C atoms, and (H) a shrinking factor (g? value) of 0.1-0.9 as measured by GPC/intrinsic-viscosity. The polyethylene composition can be finely divided particles having (P) a powder bulk density of 0.15-0.50 g/cm3.

Abstract: The present invention relates to an optical recording composition comprising at least one optical recording compound, wherein the optical recording compound is denoted by general formula (I) and exhibits a molar absorbance coefficient of equal to or greater than 5,000 mole·l·cm?1 at at least one wavelength within an absorption spectrum ranging from 200 to 1,000 nm. In general formula (I), R1 denotes a hydrogen atom or an alkyl group, and Z1 denotes an atom group, the atom group forming a ring structure with a sulfur atom and a carbon atom which are adjacent to the atom group, and a carbon atom bonded to the sulfur atom.

Abstract: A linearity of a voltage change to a tuner insertion amount is verified for at least one of a plurality of tuners. Based on the voltage change linearity, individual voltage change data corresponding to respective insertion amounts are calculated for each of the plurality of tuners through a proportional calculation. A combination of auto-tuners and a combination of respective insertion amounts of the auto-tuners are determined using the individual voltage change data, and an adequacy of the determined combinations is verified through a direct three-dimensional electromagnetic field calculation. The combinations are determined on a condition that, when the individual voltage change data of nominated tuners are added together, respective voltage changes attributed to the nominated tuners are cancelled out to allow an entire voltage distribution to have substantially no change.

Abstract: A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A ratio of a maximum boron concentration to a minimum boron concentration in a boron concentration profile across the thickness of the silicon layer is not higher than 100. The CMOS device has a lower NBTI (Negative Bias Temperature Instability) degradation.

Abstract: A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.

Abstract: The present invention provides an optical recording composition comprising at least one compound denoted by general formula (I) and a holographic recording medium comprising a recording layer, wherein the recording layer comprises at least one compound denoted by general formula (I). In general formula (I), each of A1 and A2 independently denotes —CR4R5—, —O—, —NR6—, —S—, or —C(?O)—, each of R4, R5, and R6 independently denotes a hydrogen atom or a substituent, R1 denotes a substituent, n denotes an integer ranging from 0 to 4, each of R2 and R3 independently denotes a substituent having a Hammett substituent constant, ?p value, of greater than 0, R2 and R3 do not form a ring structure by bonding together, and at least one from among R1, R2, R3, A1, and A2 comprises at least one polymerizable group.

Abstract: The present invention provides a holographic recording composition comprising a compound denoted by general formula (I) and a holographic recording medium comprising a recording layer, wherein the recording layer comprises a compound denoted by general formula (I). In general formula (I), R1 denotes a hydrogen atom or a substituent having a Hammett value, ?p, of equal to or greater than ?0.30, each of R2, R3, R4, R5, and R6 independently denotes a hydrogen atom or a substituent, each of A and B independently denotes a substituent and a combination of A and B is (cyano group, cyano group), (oxycarbonyl group, oxycarbonyl group), (acyl group, acyl group), (sulfonyl group, sulfonyl group), (cyano group, acyl group), (cyano group, sulfonyl group), (oxycarbonyl group, acyl group), (oxycarbonyl group, sulfonyl group), or (sulfonyl group, acyl group), and at least one of R1, R2, R3, R4, R5, R6, A, and B comprises a polymerizable group.

Abstract: The present invention provides a holographic recording composition comprising a compound denoted by general formula (I) and a holographic recording medium comprising a recording layer, wherein the recording layer comprises a compound denoted by general formula (I). In general formula (1), each of R1 and R2 independently denotes a hydrogen atom, alkyl group, aryl group, heterocyclic group, acyl group, or sulfonyl group, each of R3, R4, and R5 independently denotes a hydrogen atom, alkyl group, or aryl group, each of A and B independently denotes an electron-withdrawing substituent wherein A and B don't bond together to form a ring structure, and at least one of R1, R2, R4, R5, A, and B comprises a polymerizable group.

Abstract: A door includes a door body, a pair of rotating shafts, a pair of opening/closing levers and an inhibiting member. The pair of rotating shafts rotate the door body toward either one of the left and right directions. The pair of rotating shafts are provided on each of the left and right sides of the door body. The pair of rotating shafts are vertically slidable. The pair of opening/closing levers are provided on each of the left and right sides of the door body. The opening/closing lever is connected to the rotating shaft on the same side of the door body. The opening/closing lever acommodates the connected rotating shaft within the door body by rotation. The inhibiting member inhibits one of the rotating shafts from being accommodated within the door body by operating simultaneously with rotation of the opening/closing lever connected to the other rotating shaft.