Abstract: An electronic device including: a fuse array including: fuse elements organized along a first direction and a second direction, wherein each fuse element is configured to store information, and a selection circuit configured to provide access to the fuse elements according to positions of the fuse elements along the first direction and the second direction; and a fuse read circuit connected to the fuse array, the fuse read circuit configured to generate a fuse-read output based on reading from one or more of the fuse elements.

Abstract: An electronic device including: a fuse array including fuse cells organized along a first direction and a second direction, wherein each fuse cell includes: a fuse element configured to store information, and a selection circuit configured to provide access to the fuse element according to a position of the fuse cell element along the first direction and the second direction; and a fuse read circuit connected to the fuse array, the fuse read circuit configured to generate a fuse read output based on reading from one or more of the fuse cells simultaneously and in parallel.

Abstract: A memory device includes a memory bank accessible via a plurality of memory addresses. The memory device further includes a fuse array comprising a plurality of fuses. The memory device additionally includes a first plurality of local fuse latches disposed outside of the fuse array and configured to provide redundancy for the plurality of memory addresses. The memory device also includes a fuse array broadcasting system comprising an N-bit bus system, wherein the N-bit bus system is communicatively coupled to the fuse array and to the first plurality of local fuse latches, and wherein the fuse array broadcasting system is configured to communicate fuse data from the fuse array to the first plurality of local fuse latches via the N-bit bus system.

Abstract: A memory device includes a memory bank accessible via a plurality of memory addresses. The memory device further includes a fuse array comprising a plurality of fuses. The memory device additionally includes a first plurality of local fuse latches disposed outside of the fuse array and configured to provide redundancy for the plurality of memory addresses. The memory device also includes a fuse array broadcasting system comprising an N-bit bus system, wherein the N-bit bus system is communicatively coupled to the fuse array and to the first plurality of local fuse latches, and wherein the fuse array broadcasting system is configured to communicate fuse data from the fuse array to the first plurality of local fuse latches via the N-bit bus system.

Abstract: A cylindrical container or vessel, for example a pail, includes a bi-directionally rotatable internal auger having a rotation axis extending across a diameter of the shaft and manually-rotated by a handle outside the container, and tines extending in a radial direction of the shaft and arranged to turn and loosen contents of the container. The tines have different lengths and a predetermined relative spacing along the shaft, and be arranged extend at different angles, in order to maximize an amount of matter moved by the tines when rotating the shaft. The container may be vented to optimize aeration.

Abstract: Methods, systems, and devices for mitigating line-to-line capacitive coupling in a memory die are described. A device may include multiple drivers configured to both drive latched data and conduct read and write operations. For example, a memory device may contain two or more memory arrays independently coupled to two drivers via two data lines. One data line may be driven strongly to shield a corresponding memory array from effects associated with data line capacitive coupling. An opposing data line may be driven with data pertaining to an access operation of the memory array to which it is coupled. The opposing data line may be driven concurrently or within a small time difference of the other data line.

Abstract: Methods, systems, and devices for mitigating line-to-line capacitive coupling in a memory die are described. A device may include multiple drivers configured to both drive latched data and conduct read and write operations. For example, a memory device may contain two or more memory arrays independently coupled to two drivers via two data lines. One data line may be driven strongly to shield a corresponding memory array from effects associated with data line capacitive coupling. An opposing data line may be driven with data pertaining to an access operation of the memory array to which it is coupled. The opposing data line may be driven concurrently or within a small time difference of the other data line.

Abstract: A cylindrical container or vessel, for example a pail, includes a bi-directionally rotatable internal auger having a rotation axis extending across a diameter of the shaft and manually-rotated by a handle outside the container, and tines extending in a radial direction of the shaft and arranged to turn and loosen contents of the container. The tines have different lengths and a predetermined relative spacing along the shaft, and be arranged extend at different angles, in order to maximize an amount of matter moved by the tines when rotating the shaft. The container may be vented to optimize aeration.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: A memory circuit according to one embodiment of the present invention includes a clock driver and an ODT timer. The clock driver is configured to provide a system clock signal based on a root clock signal when the memory circuit is in a read mode, and is configured to stop providing the system clock signal when the memory circuit is not in the read mode. The ODT timer is configured to provide a system ODT signal when the memory circuit is not in the read mode, wherein the transition edge of the system ODT signal is aligned with the transition edge of the root clock signal.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: A phase recombination circuit includes a first phase input and a first one-shot pulse generator adapted to receive the first phase input and produce a first signal to pull a signal to a first state. The phase recombination circuit also includes a second phase input in phase relationship with the first phase input, and a second one-shot pulse generator adapted to receive the second phase input and produce a second signal to pull a signal to a second state.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: A memory circuit according to one embodiment of the present invention includes a clock driver and an ODT timer. The clock driver is configured to provide a system clock signal based on a root clock signal when the memory circuit is in a read mode, and is configured to stop providing the system clock signal when the memory circuit is not in the read mode. The ODT timer is configured to provide a system ODT signal when the memory circuit is not in the read mode, wherein the transition edge of the system ODT signal is aligned with the transition edge of the root clock signal.

Abstract: A phase recombination circuit includes a first phase input and a first one-shot pulse generator adapted to receive the first phase input and produce a first signal to pull a signal to a first state. The phase recombination circuit also includes a second phase input in phase relationship with the first phase input, and a second one-shot pulse generator adapted to receive the second phase input and produce a second signal to pull a signal to a second state.

Abstract: A phase recombination circuit includes a first phase input and a first one-shot pulse generator adapted to receive the first phase input and produce a first signal to pull a signal to a first state. The phase recombination circuit also includes a second phase input in phase relationship with the first phase input, and a second one-shot pulse generator adapted to receive the second phase input and produce a second signal to pull a signal to a second state.

Abstract: Embodiments for selecting regions of memory are described. For example, in one embodiment a memory device having an array of memory cells includes an array selection block. The array selection block receives an input signal indicative of a region in the array of memory cells. The array selection block generates a selection signal to map the region to at least one physical location in the array of memory cells, based on the detection of the number of defects in that location.